DIODE Z0 031 Search Results

TP100

Contextual Info: SFH 487P SIEMENS GaAs INFRARED EMITTER Package Dimensions in Inches mm .122(3.1) .098(2.5) Surface not Flat Cathode .031 (0.8) .016 (0.4) .079 (2.0) .067(1.7) V .100 (2.54) T1 (3mm) Package Flat Plastic Lens Long Term Stability Good Spectral Match with Silicon

SMPN7316

Abstract: DIODE Z0 031
Contextual Info: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance

408nm

Abstract: HFDN-28 MAX3701 MAX3701CTJ MO220 32L-QFN HFAN02
Contextual Info: 19-3008; Rev 0; 10/03 2x _ MAX3701 DVD ♦ MAX3701 _ / ♦ 0.9ns RF ♦ MAX3701 RF Hz 1nA/√H ♦ 200mA ♦ ♦ / (OPC) ♦ 200mA 200mAP-P 400Mbps MAX3701 CMOS RF 5 5mm2 32 200MHz ♦ 600MHz

DP0702

Abstract: dn1001 dn1002 Adams-Russell SDI Microwave diodes dn1002 MIL-I-45208A DP0701 DP-2000 DN1005A DP1005A
Contextual Info: ADAMS-RUSSELL/ I | S D I INC □□0G3Q4 2 |~ V - * T-ZS " Description * Features The DP series of PIN diodes and the DN series of NIP diodes are designed to cover a wide range of applica­ tions th at fall into the general catagories of switching, phase shifting, attenuating and limiting.

IXTH10N60

Abstract: IXTM10N60
Contextual Info: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc

4N95

Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95
Contextual Info: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

IXTH12N50

Contextual Info: I X Y S CORP 1 ÔE D • 4bôb22b GOGGblB <=1 IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.4Q/0.5Q MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

15N50A

Abstract: IXTM15N45 15n50 IXTM15N50
Contextual Info: I X Y S CORF? □IXYS 1ÖE D • 4bäb22b QOOQblE 7 ■ IXTH15N45A, IXTH15N50A, ÏXTM15N45A, IXTM15N50A 15 AMPS, 450-500 V, 0.4Q MAXIMUM RATINGS Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

6n60a

Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Contextual Info: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

Contextual Info: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

RM2- Diode

Abstract: RM2-12V RM2-24V EX 571 RM2-L-12V RM2-L2-12V RM2-L2-24V RM2-L-24V HP4328A RM2-9V
Contextual Info: RM HIGH FREQUENCY SIGNAL 4 GHz SWITCHABLE 28 1.102 RM-RELAYS • Excellent high frequency characteristics Isolation: 40 dB or more (at 4 GHz) Insertion loss 1.0 dB or less (at 4 GHz) V.S.W.R.: 1.5 or less (at 4 GHz) • High sensitivity in small size Size: 28.0 x 12.4 × 10.5 mm 1.102 × .488 × .413 inch

MD54-0007

Abstract: MD54-0007SMB MD54-0007TR MD54-0007TR-3000
Contextual Info: Low Cost MMIC Mixer, 2.1 – 2.7 GHz MD54-0007 V 1.0 Features • • • • • • Functional Schematic MMDS and WLAN Applications +18 dBm Input 1 dB Compression Point Greater than 20 dB LO to RF Isolation +13 dBm LO Drive Level No DC Bias Required Ultra-Miniature SOT-25 Plastic Package

e20231

Abstract: 20231 transistor E101
Contextual Info: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power

SMT resistor

Abstract: TRANSISTOR 185
Contextual Info: e PTB 20170 30 Watts, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts power output, it may be used for both CW and PEP applications. Ion

atmel 524 93c46

Abstract: ag20 taiyo st c632 Zener diode ST DIODE u12 c644 d28 diode DDR2 layout guidelines C155T TI4510 zener diode c531 915GM
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

capacitor 35 v

Abstract: 20231 bav 17 diode
Contextual Info: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power

E20124

Abstract: E201 G200 Ericsson RF POWER TRANSISTOR RF Transistor 1500 MHZ 1301P
Contextual Info: e E S A E PTE 20124* L E -R E 40 Watts, 1.465–1.513 GHz R P Cellular Radio RF Power Transistor Description The 20124 is an NPN common emitter RF power transistor intended for 26 Vdc class AB operation from 1.45 to 1.52 GHz. Rated at 40 watts minimum output power, it is specifically intended for cellular

pin configuration NPN transistor c828

Abstract: w32 smd transistor aa26 fairchild smd transistor w32 speedtech p65 GMT795 foxconn npn transistor w16 SMI TSOP 48pin c427 diode
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

ZENER D30

Abstract: aa26 fairchild ag20 taiyo R170 diode DIODE SMD C136 w32 smd transistor foxconn fic at11 st c632 Zener diode transistor C458
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

speedtech p65

Abstract: foxconn ag20 taiyo transistor c107 m Socket AM2 Floppy connector 34 pin IDC to usb fic at11 d51 6pin AOD404 AO3401
Contextual Info: 5 4 3 2 1 First International Computer,Inc Protable Computer Group HW Department D D Board name : Mother Board Schematic 1. Schematic Page Description : Project : AT11 2. PCI & IRQ & DMA Description : Version : 0.2 3. Block Diagram : 4. Nat name Description :

BURR-BROWN 3656

Contextual Info: For Im m iiate M i a m i , M a d four Local Salesperson BU R R -B R O W N 3656 Transformer Coupled ISOLATION AMPLIFIER FEATURES APPLICATIONS • INTERNAL ISOLATED POWER • MEDICAL Patient Monitoring and Diagnostic Instrumentation • 8000V ISOLATION TEST VOLTAGE

op 50MHZ OPEN dip

Abstract: SMD R1M 29 CLC446 CLC446A8B CLC446AJ CLC446AJE CLC446AJP CLC446ALC CLC446AMC RG 331 coaxial cable
Contextual Info: J National CLC446 æ Semiconductor Comlinear CLC446 400MHz, 50mW Current-Feedback Op Amp General Description Features The Comlinear CLC446 is a very high-speed unity-gain-stable current-feed back op amp that is designed to deliver the highest ' levels of performance from a mere 50mW quiescent power. It

52AVP

Abstract: unitrode stackable rectifier
Contextual Info: UNITRODE CORP TE » ^ = 1 3 4 7 ^ 3 DD10fl03 S POWER MOSFET TRANSISTORS UFND120 U FND120 UFND123 100 Volt, 0.3 Ohm N-Channel FEATURES DESCRIPTION • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled

fairchild diode smd code aa11

Abstract: IC1210-M128LQ fairchild diode smd code aa35 88i8030 78u30 SMD k31 Transistor d82 diode m36 smd diode ag20 taiyo IC1210
Contextual Info: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS1 MD34 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Net name Description :