DMA5392 Search Results

Contextual Info: DMA5392AM Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandXr-Kp Test Freq9.4G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5

Contextual Info: DMA5392AMR Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandXr-Kp Test Freq9.4G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)7.5

1N23 diode

Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
Contextual Info: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local

1N23C

Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
Contextual Info: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:

1N21

Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
Contextual Info: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type

1N23 diode

Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
Contextual Info: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure