DMN3730 Search Results

Contextual Info: Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V Low VGS(th), can be driven directly from a battery

DMN3730U-7

Contextual Info: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary V BR DSS Features and Benefits • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V

dmn3730ufb4

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

Contextual Info: A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Features and Benefits Product Summary V BR DSS • • • • • • ID Max (Note 5) Max RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.94A 560mΩ @ VGS= 2.5V 0.85A 30V

DMN3730

Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance

Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

DFN1006H4-3

Abstract: DMN3730UFB4 DMN3730UFB4-7
Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

DMN3730

Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A   0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery

Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

DMN3730UFB-7

Abstract: MOSFET 25 NE 50 Z
Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data

NX3008

Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)