DS35017 Search Results
DS35017 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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dmn3730ufb4Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data |
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DMN3730UFB4 AEC-Q101 DS35017 dmn3730ufb4 | |
DMN3730Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance |
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DMN3730UFB4 AEC-Q101 DS35017 DMN3730 | |
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Contextual Info: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance |
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DMN3730UFB4 AEC-Q101 DS35017 | |
DFN1006H4-3
Abstract: DMN3730UFB4 DMN3730UFB4-7
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DMN3730UFB4 DS35017 DFN1006H4-3 DMN3730UFB4 DMN3730UFB4-7 | |
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Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery |
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DMN3730UFB4 AEC-Q101 DS35017 | |
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Contextual Info: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data |
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DMN3730UFB4 DS35017 |