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    Diodes Incorporated AP7347DQ-115FDZW-7

    LDO CMOS LowCurr W-DFN2020-6 T&R
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    DigiKey AP7347DQ-115FDZW-7 Bulk 3,000 1
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    Avnet Americas AP7347DQ-115FDZW-7 Reel 20 Weeks 3,000
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    Mouser Electronics AP7347DQ-115FDZW-7
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    Festo DYSD-Q11-5-5-Y1F-L-Y9 (ALTERNATE: 8161520)

    Shock Absorber, for actuator | Festo DYSD-Q11-5-5-Y1F-L-Y9
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    RS DYSD-Q11-5-5-Y1F-L-Y9 (ALTERNATE: 8161520) Bulk 5 Weeks 1
    • 1 $189.74
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    DQ115 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original     		PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    sht22

    Abstract: SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2
    Text: 5 EBSA-110 SHEET SIG 4 Schematic PREFIXES 3 2 BAN#=EBSA-110 REV#=REVB Directory 1 - STRONGARM SHT20, C 1 - Schematic sht 2 - Block sht 3 CPU_, sht 4 - Debug sht 5 - SSRAM sht 6 BUF_, IO_ Address sht 7 MUX_, SIM_ DRAM sht 8 CTA_, CTB_ Control sht 9 CTA_, CTB_


    Original     		PDF EBSA-110 SHT20, ebsa110 sht22 SHT12 5BE1 EL114 6nc3 SHT20 RAM128KX8 SHT13 VG-468 57BE2

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


    Original     		PDF UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil)

    LH28F160BJHE-BTLZD

    Abstract: No abstract text available
    Text: LHF16JZD ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. ●When using the products covered herein, please observe the conditions written herein and the


    Original     		PDF LHF16JZD LH28F160BJHE-BTLZD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1348B Stacked Chip 16M Flash and 4M SRAM Model No.: LRS1348B Spec No.: EL127003 Issue Date: July 3, 2000 sharp L R S 13 48 B • Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LRS1348B LRS1348B) EL127003 EL127003 FUM99902 AP-001-SD-E AP-006-PT-E AP-007-SW-E

    ba4410

    Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
    Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification


    Original     		PDF K5A3x41YT 2Mx16) 256Kx16) 66-Ball 80x11 08MAX ba4410 Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221

    LH28F160BJHE-BTLZD

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BJHE-BTLZD Flash Memory 16M 1M x 16 (Model No.: LHF16JZD) Spec No.: EL133046 Issue Date: Mrch 22, 2001 sharp LHF16JZD ●Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BJHE-BTLZD LHF16JZD) EL133046 LHF16JZD LH28F160BJHE-BTLZD

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


    Original     		PDF 200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G

    LH28F160BJHG-TTL90

    Abstract: No abstract text available
    Text: Date 16M x16 Flash Memory LH28F160BJHG-TTL90 Feb. 28. 2001 LHF16JZB ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF LH28F160BJHG-TTL90 LHF16JZB AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F160BJHG-TTL90

    LH28F160BJD-TTL80

    Abstract: LH28F160BJ
    Text: Date 16M x16 Flash Memory LH28F160BJD-TTL80 Jul. 14. 2003 LHF16JZ7 ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written


    Original     		PDF LH28F160BJD-TTL80 LHF16JZ7 AP-001-SD-E AP-006-PT-E AP-007-SW-E LH28F160BJD-TTL80 LH28F160BJ

    48-PIN

    Abstract: LH28F160SGED-L10 TSOP048-P-1220
    Text: LH28F160SGED-L10 LH28F160SGED-L10 16 M-bit 512 kB x 16 x 2-Bank SmartVoltage Dual Work Flash Memory DESCRIPTION The LH28F160SGED-L10 Dual Work flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile, read/write storage solution for


    Original     		PDF LH28F160SGED-L10 LH28F160SGED-L10 LH28F160SGEDL10 48-pin TSOP-048-P-1220) TSOP048-P-1220) TSOP048-P-1220

    LH28F160BJHG-BTLZ3

    Abstract: EL125
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F160BJHG-BTLZ3 Flash Memory 16M 1M x 16 (Model No.: LHF16JZA) Spec No.: EL125090 Issue Date: September 27, 2000 sharp LHF16JZA ●Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LH28F160BJHG-BTLZ3 LHF16JZA) EL125090 LHF16JZA LH28F160BJHG-BTLZ3 EL125

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1348B Stacked Chip 16M Flash and 4M SRAM Model No.: LRS1348B Spec No.: EL127003 Issue Date: July 3, 2000 sharp L R S 13 48 B • Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LRS1348B LRS1348B) EL127003 EL127003 FUM99902 AP-001-SD-E AP-006-PT-E AP-007-SW-E

    SiS301

    Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
    Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.


    Original     		PDF SiS300 128-bit SiS301 bt815 SILICON INTEGRATED SYSTEMS 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18

    MAX843

    Abstract: No abstract text available
    Text: 19-0388; Rev 0; 4/95 V M y J X IV M Low-Noise, Regulated, -2V GaAsFET Bias The MAX840 offers both a -2V preset output and a -0.5V to -9.4V a d ju stab le output. The M AX843/M AX844 use an external positive control voltage to set the negative output voltage. Input voltage range for all the devices is


    OCR Scan     		PDF MAX840 AX843/M AX844 MAX843/MAX844 5B7LL51 0011B75 MAX840/MAX843/MAX844 MAX843/MAX844 001127t MAX843

    Graphic equalizer circuit diagram

    Abstract: 7-Band Graphic Equalizer Display Filter
    Text: SONY. C X A 1 3 5 2 A S 2-channel 5 Elements Graphic Equalizer IC Description The CXA1352AS is a bipolar IC for graphic equalizer use. Alt controls are DC performed while the addition of single-potentiometers easily composes a 2-channel graphic equalizer.


    OCR Scan     		PDF CXA1352AS 001157b CXA1352AS 0D11577 CXA1352A5 QG11S7Ã Graphic equalizer circuit diagram 7-Band Graphic Equalizer Display Filter

    Untitled

    Abstract: No abstract text available
    Text: Whpl H E W L E T T mLrÏÆP A C K A R D Low Cost Gigabit Rate Transmit/Receive Chip Set Technical Data HDM P-1012 T ran sm itter HDM P-1014 R eceiv er F ea tu res D escrip tio n • T ran sp aren t, E x ten d ed R ib b on Cable R ep la cem en t • Im p lem en ted in a L ow


    OCR Scan     		PDF P-1012 P-1014 HDMP-1012 HDMP-1014

    Untitled

    Abstract: No abstract text available
    Text: SHARP SHARP LHF80G05 # H a n d le this docum ent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written perm ission o f the company. # W h e n using the products covered herein, please observe the conditions written herein


    OCR Scan     		PDF LHF80G05 TSOP48-- AA1142 LH28F800SGHEL70