DS1208 Search Results

DS12867

Abstract: DS12B87 for REAL TIME CLOCK DS12887 DS12087 DS1268 ds12887 application note DS12687
Contextual Info: DS12087 DALLAS SEMICONDUCTOR DS12887 Real Time Clock PIN ASSIGNMENT FEATURES • Drop-in replacement for IBM AT computer clock/cal­ endar MOT I NC I • Pin compatible with the MC146818B and DS1287 I2 II ADO II NC • Totally nonvolatile with over 10 years of operation in

Contextual Info: RFSW1012 RFSW1012 Broadband SPDT Switch BROADBAND SPDT SWITCH GND RF2 GND Package: QFN, 12-Pin, 2mm x 2mm x 0.55mm 12 11 10 Features 50 or 75 Applications  Low Insertion Loss: 0.30dB at 1980MHz  High Isolation: 37dB at 2GHz  High IP3: >75dBm at 2GHz

wifi schematic

Abstract: SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER RFSW8000 RFSW8005 SOI RF switch
Contextual Info: RFSW8005 11b/g/n WiFi SP3T Switch RFSW8005 Proposed 11b/g/n WiFi SP3T SWITCH Package: QFN 16 pin, 3mm x 3mm x 0.5mm  SP3T Switch  Switch Control Voltage 2.5Vto 5V  Low Insertion Loss 0.9dB N/C N/C N/C C_RX C_TX BT N/C RX Applications  N/C TX Features

rf3225

Abstract: bluetooth module RFMD ASM rf3225tr
Contextual Info: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%

RFG1M20180SB

Abstract: j35 fet RFG1M20180SQ
Contextual Info: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to

802.11AC

Abstract: RFFM4203TR7
Contextual Info: RFFM4203 3.0V TO 5.0V, 2.4GHz TO 2.5GHz 802.11b/g/n/ac WiFi FRONT END MODULE  N/C 2 11 BT VCC 3 10 Vdd VCC 4 9 LNA_EN Applications     IEEE802.11b/g/n/ac WiFi Applications 2.4GHz to 2.5GHz ISM Band Solutions Portable Battery-Powered Equipment

RF9802

Contextual Info: RF9802 Quad Band GPRS/Linear EDGE Transmit Module RFIN HB Integrated VRAMP Filter  Digital Bias Control  EDGE Low Current Mode  No External Routing  Symmetrical RX Ports          GND RX1 RX2 RX3 17 2 16 RX4 Amplifier Die

RDA1005L

Contextual Info: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25

SBB5082S

Contextual Info: SBB5082S 50MHz to 6000MHz InGaP HBT Active Bias Gain Block Package Style: Hermetic, 2-pin, 5.8mm x 2.8mm Gain and Return Loss versus Frequency with Bias Tees, Vs = 5V, Is = 71mA 30.0 20.0      Gain and Return Loss (dB) Features Single Fixed 5V Supply

Contextual Info: RF3161 QUAD-BAND GSM850/GSM900/DCS/PCS GMSK/EDGE POWER AMP MODULE Package Style: Module, 6mmx6mm Features       Ultra-Small, Ultra-Thin 6mmx6mmx1mm Package Size Integrated VREG Complete Power Control Solution Large Signal Polar Modulation EDGE Compatible

Contextual Info: RF9801 DUAL-BAND EGSM900/DCS1800/GSM/ GPRS/LINEAR EDGE TRANSMIT MODULE        Digital Bias Control Edge Low Current Mode No External Routing Symmetrical RX Ports High Gain Supports Low Drive Level Pin Compatibility with RF716X Family Robust 8kV ESD Protection at

Contextual Info: RF7115 QUAD-BAND GSM850/GSM900/DCS/PCS TRANSMIT MODULE RoHS Compliant & Pb-Free Product Package Style: Module 7mmx8mm GSM GaAs Die pHEMT Switch LB RF IN 2 Features  VSENSE 1 Reduced Solution Size Integrating Antenna Switch and Harmonic Filtering to Decrease Time

9842

Abstract: 9926 9902 DS1208 DS12885 DS2401 DS2405 DS2409 DS2415 9749
Contextual Info: dallas semiconductor reliability report: Process: Metal: Single Poly, Single Metal Ti/TiN layers 0.6 µm Al / 0.5% Cu / 0.8% Si Gate Ox Thickness: Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage

KB910

Abstract: KB910 B4 edw10 la-2301 IXP150 AOS 3401 RC300ML af7 smd transistor smd transistor MP3 Y8 R833 VL28
Contextual Info: 5 4 3 2 1 D D Compal Confidential C C Fortworth20 EDW10 Schematic Document Intel Protability Processor with ATi RC300ML + IXP150 2004-05-26 B B REV: 1.0 A A Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

LPC47N227 IO CHIP

Abstract: MONTARA-GT foxconn RTL8101L LA-1931 Compal Electronics smd transistor hl6 hp desktop pc schematic isl6247 g25 SMD Transistor
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : DBL10 - Sapporo X COMPAL P/N : DA8BL10L000 PCB NO : LA-1931 Revision : 0.2 1 DBL10 - Sapporo X Schematics Document 2 2 uFCBGA/uFCPGA NorthWood MT 2003-06-09 0.2 Gerber Out Version 3 3 4 4 Compal Electronics, Inc.

EPCOS R753

Abstract: epcos r707 EAL51 SCD-10040 MAX1532A APW7057RKC EPCOS R800 SUYIN_200275MR007G113ZL 3V REGULATOR SOT89 smd Compal Electronics
Contextual Info: 5 4 3 2 1 D D C C Sonoma Dothan EAL50_1 LA2362 Schematic B B A A Compal Secret Data Security Classification 2005/03/01 Issued Date Deciphered Date 2006/03/01 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

marvell 88SA8040

Abstract: smd sot23-3 W32 01u0 Socket AM2 AOS 3401 Compal Electronics SMD Diode S140 APW7057 PC8421 compal
Contextual Info: A B C D E 1 1 Sakhir 10C GC LA-2491 Schematics Document 2 2 Intel Dothan / Alviso GM(PM) / DDR-1(DDR-2) / ICH6-M (nVIDIA NV43M / ATi M24) 2004 / 07 / 05 Rev:0.1 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

upd720101 user manual

Abstract: RTL8101L smd transistor A15 HB foxconn eprom 24C16 SMD MAL 24C16 EEPROM 24C16 LA205 transistor C639 w RC300MD
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : Sapporo XA COMPAL P/N : DFL10 PCB NO : LA-2051 Revision : 0.1A 1 2 2 Sapporo XA Schematics Document uFCBGA/uFCPGA NorthWood MT 2003 8 27 v0.1A 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL

LA-1931

Abstract: 120W ac adapter schematic MONTARA-GT smd transistor Ha-16 m21 sot23 transistor foxconn G714 transistor SMD t4 Compal Electronics smd transistor hl6
Contextual Info: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : DBL10 - Sapporo X COMPAL P/N : DA8BL10L010 PCB NO : LA-1931 Revision : 1.0 1 2 2 DBL10 - Sapporo X Schematics Document uFCBGA/uFCPGA NorthWood MT 2003-09-19 v1.0 3 3 4 4 Compal Electronics, Inc. Title Cover Sheet

DS2503

Abstract: DS12C885 DS2505 DS1225Y DS2068 DS2414 DS1868 c1 a6 B712 DS83C950
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product Rev DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm 0.6 µm A2 DS32KHZ A6 A3 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product Rev DS1722 A2 DS1775

A7W 34

Abstract: a7w 20 DS146 a7w 9 ds1480 ds1216 ds2503 DS1722 DS1671 AC501
Contextual Info: RMP Process Samples 0.8 µm 0.6 µm Double Poly, Double Metal 0.8 µm Rev DS80CH10 A3 A2 DS21352 A4 A5 Product Rev DS1722 A2 DS1722 A4 DS1775 A1 DS1775 A2 DS1820 B5 DS1820 B5 DS1820 B6 DS1822 B6 DS1822 B6-PA DS1847 B1 DS1848 B1 DS21352 A3 DS21352 A4 DS21354

DS1868

Abstract: DS1207 MUBW20-12 A7 DS2505 DS1640
Contextual Info: RMP Process Samples 0.8 µm Double Poly, Double Metal Monitor Device s Product DS2154 DS2152 A2 DS2154 A2 DS80CH10 A3 DS80CH10 A5 0.6 µm A2 DS32KHZ A6 Double Poly, Double Metal (Ti/TiN layers used on all Metals) Product 0.6 µm Rev Rev DS1722 A2 DS1775 A1

CN1E4KTTD

Abstract: RDA1005L 68nH CN1E4KTT
Contextual Info: RDA1005L RDA1005LDigital Controlled Variable Gain Amplifier 50MHz to 4000MHz, 6 Bit DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT  Broadband 50MHz to 4000MHz Operation GND 2 GND DATA CLK 29 LE 30 GND GND 31 AMPOUT GND 32 28 27 26 25

Contextual Info: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 6000MHz Frequency Range  30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 2 RFIN 3 VDD VC GND 15 14 13 CONTROL BLOCK 4 Low Supply Current 1mA Typical