DS1230Y-150 DALLAS Search Results

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4

Contextual Info: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

28256 eeprom

Abstract: EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230 DS1230AB DS1230Y
Contextual Info: DALLAS SEMICONDUCTOR CORP sbimao 3^E D 00G34DS a h d a l - T '^ 'Z 3 -V 7 ” DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN DESCRIPTION • Data retention in the absence of Vcc • Data Is automatically protected during the de­ crease in ^cc at power loss

28256 eeprom

Contextual Info: D S 1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

1230Y

Abstract: DALLAS SEMICONDUCTOR Ds1230
Contextual Info: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the

P2215

Abstract: P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403
Contextual Info: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS

28256 eeprom

Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM

DALLAS SEMICONDUCTOR Ds1230

Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Contextual Info: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1

DS1230

Abstract: DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns

EEPROM 28256

Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns

DS1230Y-120-IND

Abstract: DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

DS1230

Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe

DS1230Y-200 DALLAS

Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

EEPROM 28256

Abstract: DS1230AB CI 740 DS1230 DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

EEPROM 28256

Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS9034PC
Contextual Info: D S 1230Y /A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • R eplaces 32K x 8 volatile static RAM, EEPROM or