DS1230Y-200 DALLAS Search Results

25814

Contextual Info: RELIABILITY MONITOR DS1230Y-200 APR '00 Monitor DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 0005 720 118511 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 25412 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 25413 PHYSICAL DIMENSIONS MIL-STD-883-2016

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile

Contextual Info: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE

Contextual Info: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

28256 eeprom

Abstract: EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230 DS1230AB DS1230Y
Contextual Info: DALLAS SEMICONDUCTOR CORP sbimao 3^E D 00G34DS a h d a l - T '^ 'Z 3 -V 7 ” DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN DESCRIPTION • Data retention in the absence of Vcc • Data Is automatically protected during the de­ crease in ^cc at power loss

28256 eeprom

Contextual Info: D S 1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of V qC • Data is automatically protected during the decrease in Vc c at power loss • Directly replaces 32K x 8 volatile static RAM or EEPROM

P2215

Abstract: P22102 P22372 P22121 40Pn B1 9742 P22071 dallas date code ds1230 208mil P22403
Contextual Info: RELIABILITY MONITOR STRESS: TEMP CYCLE CONDITIONS: -40 TO 85°C MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. PACKAGE READ POINT QTY FAIL DS2250T Y JUN 98 P22125 9814 DALLAS 101397 SIP STICK 100 11 DS2250T Y JUN 98 P22125 9814 DALLAS

1230Y

Contextual Info: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile

Contextual Info: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or

1230Y

Abstract: DALLAS SEMICONDUCTOR Ds1230
Contextual Info: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the

DALLAS SEMICONDUCTOR Ds1230

Abstract: dallas ds1230 EEPROM 28256 1230Y 34-PIN DS1230 DS1230AB DS1230Y CI 0740 LV 2.8 DS1230Y-150 DALLAS
Contextual Info: DS 1230Y/A B DALLAS DS1230Y/AB SEM ICON DUCTOR FEATURES 256K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I1 A7 I1 A6 I1 A5 I1 A4 I1

DS1230

Abstract: DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns

EEPROM 28256

Abstract: DS1230 DS1230AB DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 DS9034PC ADS1230
Contextual Info: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE • Low–power CMOS A2 8 21 A10 A1 9 20 CE • Read and write access times as fast as 70 ns

DS1230

Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

DS1230Y-120-IND

Abstract: DS1230Y-85
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,

28256 eeprom

Abstract: dallas date code FOR DS1230Y EEPROM 28256 QS257 28256 DS1230AB A14C DS1230Y
Contextual Info: DALLAS SEMI CO NDUC TO R CORP GTE D | SblMlBG □□□55SG □ | ¡1 Dallas Semiconductor w 2 S 6 K N onvolatiie SRAM FEATURES ra iU M G M IiW PIN CO N N EC TIO N S • Data retention in the absence o f V cc • Data is autom atically protected dur­ ing power loss

DS1233 a5

Abstract: e8 sot223 9915 dallas 25010 DN819 densit DS1232L ds1232l datasheet DS1869 DK815282AAB
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY DATE PRODUCT REV JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC

fds5002

Abstract: dallas E8 24715
Contextual Info: RELIABILITY MONITOR STRESS: WRITE CYCLE STRESS CONDITIONS: 85 C, 7.0 VOLTS MONITOR DATE ASSEMBLY PRODUCT REV DATE JOB NO CODE FACILITY LOT NO. DS1621 A7 JUN '99 24325 9915 ATP Anam, PI DK815282AAB SOIC 50 45 DS1621 A7 SEP '99 24466 9930 ATP (Anam, PI) DK906731AAC SOIC

DS1230

Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC
Contextual Info: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles

Contextual Info: D S 1 2 3 0 Y /A B DALLAS SEMICONDUCTOR FEATURES DS1 230Y/ AB 256K N onvolatile SRAM PIN ASSIGNMENT A14 111 281 A12 112 E 271IW A7 113 261IA13 A6 114 251IA8 A5 115 241IA9 A4 116 231IA11 A3 117 221I A2 118 211I A10 A1 119 201I^ A0 1110 191I DQ7 DQ01111 181I DQe