DS30929 Search Results
DS30929 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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DMN5L06K
Abstract: DMN5L06K-7
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DMN5L06K AEC-Q101 OT-23 J-STD-020C MIL-STD-202, DS30929 DMN5L06K DMN5L06K-7 | |
DMN5L06K
Abstract: DMN5L06K-7 DS30929
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DMN5L06K OT-23 AEC-Q101 DS30929 DMN5L06K DMN5L06K-7 | |
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max |
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DMN5L06K AEC-Q101 OT-23 J-STD-020C DS30929 | |
sot-23 body marking DAB
Abstract: DMN5L06KQ-7
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DMN5L06K AEC-Q101 DS30929 621-DMN5L06K-7 DMN5L06K-7 sot-23 body marking DAB DMN5L06KQ-7 | |
Contextual Info: SPICE MODEL: DMN5L06K NEW PRODUCT DMN5L06K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage |
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DMN5L06K AEC-Q101 OT-23 DS30929 | |
DMN5L06KQ-7Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS • • • • • • • • • 50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance |
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DMN5L06K AEC-Q101 DS30929 DMN5L06KQ-7 | |
marking code k1
Abstract: DMN5L06K DMN5L06K-7 J-STD-020D
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DMN5L06K AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS30929 marking code k1 DMN5L06K DMN5L06K-7 J-STD-020D | |
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS • 50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance |
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DMN5L06K AEC-Q101 DS30929 | |
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS • • • • • • • • • Description and Applications Mechanical Data This new generation 50V N-Channel Enhancement Mode MOSFET |
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DMN5L06K DS30929 | |
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS ADVANCE INFORMATION Features and Benefits • • • • • • • • • 50V Description and Applications Low On-Resistance |
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DMN5L06K AEC-Q101 DS30929 |