DS31481 Search Results

DS31481 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SOT963 Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching	Original	DMN26D0UDJ 240mA 170mA DS31481 SOT963	PDF
Contextual Info: GE C P L E S S E Y \| S E M I C O N D U C T O R S ] _ DS3148-1.0 Supersedes CD10702FDS 2.1 MA541 FAMILY LD/DTMF SWITCHABLE DIALLERS The MA541 family are keypad switchable LD/DTMF dialler devices with a last number redial facility.	OCR Scan	DS3148-1 CD10702FDS MA541 MA526, MA527, MA545, MA547 MA585,	PDF
Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA N EW PRODU CT 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching	Original	DMN26D0UDJ 240mA 170mA DS31481	PDF
Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) 20V 3.0Ω @ VGS= 4.5V 6.0Ω @ VGS= 1.8V • ID TA = +25°C 240mA 180mA  Dual N-Channel MOSFET Low On-Resistance: • 3.0Ω@ 4.5V • 4.0Ω@ 2.5V	Original	DMN26D0UDJ 240mA 180mA DS31481	PDF
"MARKING CODE M1" Abstract: DMN26D0UDJ-7 Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits • • ID RDS(on) TA = 25°C 3.0mΩ @ VGS= 4.5V 240mA 6.0mΩ @ VGS= 1.8V 170mA 20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching	Original	DMN26D0UDJ 240mA 170mA DS31481 "MARKING CODE M1" DMN26D0UDJ-7	PDF
"MARKING CODE M1" Abstract: J-STD-020D Contextual Info: DMN26D0UDJ NEW PRODUCT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max	Original	DMN26D0UDJ OT-963 J-STD-020D DS31481 "MARKING CODE M1" J-STD-020D	PDF
Contextual Info: DMN26D0UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features V BR DSS RDS(on) 20V 3.0 Ω @ VGS= 4.5V 6.0 Ω @ VGS= 1.8V • • ID TA = 25°C 240mA 180mA • • • • • • • Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching	Original	DMN26D0UDJ 240mA 180mA DS31481	PDF