E 634 TRANSISTOR Search Results

d634

Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
Contextual Info: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector

stc 4606

Abstract: mitsubishi cable sc03 64F22 H8S/2210 HD6432210 HD6432211 HD6432217 HD64F2212 HD64F2212U HD64F2218
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: D75FY2D
Contextual Info: D75FY2D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

honeywell m 944 r

Abstract: lasar DFC-4 transistor tt 2190 em MXC4 DSC8
Contextual Info: HONEYIilELL/SS ELEKn MIL 03 ËË1 45S1Ô72 DD0027S S |~D T -Ÿ 2 -//-0 ? Honeywell h c t s o o o , h c t -isooo Preliminary R A D IA T IO N T O L E R A N T C M O S G A T E A R R A Y S FAMILY FEATURES • Proven VLSI Design System VDS Toolkit • Radiation Tolerant Serie of 1.2-Micron CMOS

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

Contextual Info: N AMER PHILIPS/DISCRETE b^E T> • bbS3131 □□E6011 TE5 APX MPSAOb _J V _ MPSA06 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA

Contextual Info: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the

CM631

Contextual Info: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

Selector Guide

Abstract: TFBS2711X01
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

TFBS2711

Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
Contextual Info: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA55 14E D I 71fc4142 0 0 0 7 3 t i 4 7 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: Veto =60V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

BF679

Abstract: BF680 BF 679 BF679 transistor bf 680 BF-680 BF 2000 L 146 CB J BF679 CB-146
Contextual Info: *BF679 *BF680 PNP S IL IC O N T R A N S IS T O R S , P L A N A R TRANSISTORS PNP SILICIUM, PLANAR % Preferred device D is p o s itif recommandé BF 679 is intended for gain controlled input stages in UHF T V tuners. BF 680 is intended for self oscillating mixers

D150D

Abstract: SO1500 3006S
Contextual Info: H j i ff tW tiC rO S & iTil w w w * « « « P/ag/ess P&v*fe ö fry rse*» * #/ 140 Co mme r c e Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 c n - i C f\A b U i O U U RF & MICROWAVE TRANSISTORS L BAND RADAR APPLICATIONS « DESIGNED FOR USE IN LONG PULSE L

Contextual Info: Philips Semiconductors • ! bb53T31 0031568 675 U APX _Product_specification NPN 5 GHz wideband transistor ^ BFQ53 N DESCRIPTION AMER PHILIPS/DISCRETE b'lE D PINNING NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

Contextual Info: BDV64; 64A BDV64B; 64C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. N-P-N complements are BDV65,65A, 65B and 65C. QUICK REFERENCE DATA

Contextual Info: POWER TRANSISTORS Sat Test Voltages Conditions V a V bì le Ubo" le V V A A ma PT TYPE NO. hit MAXIMUM RATINGS le 25-C BV cbo BVceo BV ebo V V V A Watts & b A Va V le MIN MAX SPC163-04 200 55 40 15 20 15 5 4 1.1 2.2 5 .5 25 SPC163-06 200 75 60 15 20 15 5 4

BFQ53

Abstract: transistor w7 634 transistor BFQ52 DOMS477
Contextual Info: Product specification Philips Semiconductors 7^3 /-/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL SbE D BFQ53 711002b D O M S 477 370 • PHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the

PH6659

Abstract: PH6660 PH6661
Contextual Info: MI E » 7 1 1 Q û E t G0 5 b 7 b l I PHILIPS PH6659 PH6660 PH6661 T BPHIN INTERNATIONAL T-3S-2S N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistors, in TO-92 variant envelopes and designed for application as low power, high-frequency inverters and line drivers.

AN3890FBS

Abstract: QFH036-P-0710 switching power supply circuit diagram hall panasonic HALL ELEMENT Panasonic
Contextual Info: Panasonic ICs for Video Camera AN3890FBS Capstan Motor Drive 1C for VCR • Overview The A N 3890FB S is an 1C designed as a V C R capstan motor drive. It is particularly optimum for cam era com ­ bined VCR. ■ Features • • • • Controls the output transistors external at low V C e Built-in torque ripple cancellation circuit.

Contextual Info: Panasonic ICs for Video Camera AN3890FBS Capstan Motor Drive 1C for VCR • Overview The AN3890FBS is an 1C designed as a VCR capstan motor drive. It is particularly optimum for camera com ­ bined VCR. ■ Features • • • • Controls the output transistors external at low VCeBuilt-in torque ripple cancellation circuit.

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.