E 634 TRANSISTOR Search Results

d634

Abstract: d633 634 transistor 2SD63 2SD633 d635 ltyj WE VQE 11 E WE VQE 24 E 2SD634
Contextual Info: 2s d 633 s /' J j y N P N = s m * w ? - 1j y h y ^ y v ? •SILICON NPN TRIPLE DIFFUSED MESA DARLINGTON TRANSISTOR 2 S D 634 2s d O X % t> X 4 O '' y o Power o Hammer • H igh 635 7 > 7 — F 7 -t 7’ , Sw itching D rive, P ulse DC C u r r e n t Low C ollector

design of 300 watt mosfet inverter transformer

Abstract: FERRITE core TRANSFORMER 300 watt inverter Ti3C Caddell-Burns 6860 Caddell-Burns toroid cores size table FERRITE TOROIDAL CORE DATA IB5AC siemens toroidal core "Inverting Switching Regulator"
Contextual Info: j y \ Æ A \ j y \ CMOS M icropow er In verting S w itch in g R egulator M a x im ’s M A X 634 a n d MAX4391 C M O S D C -D C re gu­ la to rs are d e s ig n e d f o r sim p le , e ffic ie n t, in v e rtin g D C -D C co n ve rte r c irc u its . T he MAX634 and MAX4391

500w car audio amplifier circuit diagram

Abstract: dc-ac inverter PURE SINE WAVE schematic diagram 500w inverter PURE SINE WAVE schematic diagram car 12 volts amplifier mosfet 200w rms inverter welder schematic power inverter 115v 400Hz 8038 ic tester circuit diagram max pa97 1200w power amplifier circuit diagram inverter welder schematic diagram
Contextual Info: M I C R O T E C H N O L O G Y ECHNICAL seminar Designed to Help You Boost Your Analog Design Power REVISION 6 – MAY 2001 Table of Contents Welcome to Apex…………….… 634 Where we live…………………… 635 Quality at Apex…………………… 636

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current

Contextual Info: A Product Line of Diodes Incorporated FMMT634 100V NPN DARLINGTON TRANSISTOR IN SOT23 Features Mechanical Data •           BVCEO > 100V IC = 900mA high Continuous Collector Current ICM = 5A Peak Pulse Current 625mW Power dissipation

FMMT634Q

Contextual Info: A Product Line of Diodes Incorporated FMMT634Q 100V NPN DARLINGTON TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. •  Features 

stc 4606

Abstract: mitsubishi cable sc03 64F22 H8S/2210 HD6432210 HD6432211 HD6432217 HD64F2212 HD64F2212U HD64F2218
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: Central" CZT122 NPN CZT127 PNP semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR POWER DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low speed

pnp DARLINGTON TRANSISTOR ARRAY

Abstract: D75FY2D
Contextual Info: D75FY2D PNP POWER DARLINGTON TRANSISTOR ARRAY -80 VOLTS -2 AMP, 3 WATTS Designed for high power switching applications, hammer drive, pulse motor drive and inductive load drive applications. Features: • High reliability small-sized available 3 in 1 • Epoxy single-inline package (8 pin)

B0415

Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
Contextual Info: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2

NTE2640

Abstract: NPN VCEO 800V transistor nte2640
Contextual Info: NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output Features: D High Speed D High Collector–Emitter Breakdown Voltage D High Reliability D On–Chip Damper Diode Absolute Maximum Ratings: TA + 25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V

honeywell m 944 r

Abstract: lasar DFC-4 transistor tt 2190 em MXC4 DSC8
Contextual Info: HONEYIilELL/SS ELEKn MIL 03 ËË1 45S1Ô72 DD0027S S |~D T -Ÿ 2 -//-0 ? Honeywell h c t s o o o , h c t -isooo Preliminary R A D IA T IO N T O L E R A N T C M O S G A T E A R R A Y S FAMILY FEATURES • Proven VLSI Design System VDS Toolkit • Radiation Tolerant Serie of 1.2-Micron CMOS

KSP2222

Abstract: transistor KSP2222
Contextual Info: KSP2222 NFN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V c e o ° 30V • Collector Dissipation: Pc max ,*625mW ABSOLUTE MAXIMUM RATINGS (TA“25t:) C haracteristic Collector-Base Voltage Collector-Em itter Voltage

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

MPSA06

Abstract: MPSA05 transistor MPSA06
Contextual Info: N AMER PHI LIP S/DISCRETE b^E J> m bbSBiai GDEÖD11 TES MPSAUÖ MPSA06 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in plastic TO-92 envelope fo r general purpose applications. Q UICK REFERENCE D A T A MPSA06 MPSA05 Collector-em itter voltage

Contextual Info: SANYO SEMICONDUCTOR FC111 CORP 22E D 7Tî707t Q0D73Ô0 ñ T-37-/3 # PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications 3079 with Bias Resistances R1=22kfl, R2=22kO Features • On-chip bias resistors (Ri = 22kfl,R2= 22kQ) • Composite type with 2 transistors contained in the CP package currently in use, improving the

Contextual Info: SIEMENS BCR 135W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R ^ IO k fi, R2=47Ki2 _E L ÜJ Type Marking Ordering Code BCR 135W WJs n r Pin Configuration Q62702-C2287 1= B Package

e 634 transistor

Contextual Info: UMA10N FMA10A Transistor, digitai, dual, PNP, with 2 resistors Features Dimensions Units : mm • available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages • package marking: UMA1 ON and FMA10A; A10 • package contains two interconnected PNP digital transistors (DTA113ZKA)

CM631

Contextual Info: MG50N2CK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

Selector Guide

Abstract: TFBS2711X01
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

634 transistor

Contextual Info: DTC363ES Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm • available in SPT (SC-72) package • in addition to standard features of digital transistor, this transistor has: DTC363ES (SPT) •I * o ;• r;i ■"1 — low collector saturation voltage,

q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

TFBS2711

Abstract: TFBS2711X01 windshield rain sensor "steering Angle Sensor" TEMD6200 solar sensor TEMT6200 TEMD6000FX01 TEMT6000FX01 TEMD5510FX01
Contextual Info: V i s h ay I n t e r t ec h n o l o g y, I n c . Automotive Grade Optoelectronics Optoelectronics - AEC-Q101 Qualified Parts AEC-Q101 Qualified Par ts Vishay Optoelectronics – Automotive Grade by Design This catalog lists our AEC-Q101 qualified optoelectronics components, including LEDs, infrared

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation