E03L Search Results

Contextual Info: E03L N - CHANNEL 30V - 0.037^ - 4A - SOT-223 STripFET POWER MOSFET TYP E V S TN 4N E03L dss 30 V R D S o n Id < 0 .0 5 Q. 4 A . TYPICAL Ros(on) =0.037 £2 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . APPLICATION ORIENTED

Contextual Info: E03L N - CHANNEL 30V - 0.034£2 - 22A TO-263 _ STripFET POWER MOSFET P R ELIM IN ARY DATA TYPE STB22N E03L V dss RDS on Id 30 V < 0 .0 5 Q. 22 A . . . . . TYPICAL R D S (on) = 0.034 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: E03L-12 N - CHANNEL 30V - 0.009 i ì - 60A - D^PAK "SINGLE FEATURE SIZE " POWER MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TB60N E03L-1 2 30 V < 0.012 a 60 A • . . . . . . . TYPICAL RDS(on) = 0.009 AVALANCE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

E03SL

Abstract: e07sl MB1551 mb15e03 equivalent MB15E03SL MB15A02 MB15Cxxx MB15E07 mb15u32 c6sw
Contextual Info: Edition 5.0 Jan. 2000 Fujitsu PLL Frequency Synthesizer Evaluation Tool Version 5.0 User’s Manual FUJITSU LIMITED 1 PLL Evaluation tool (ver5.0) CONTENTS CHAPTER 1 : HARDWARE DESCRIPTION 1.1. INTRODUCTION 1.2. HARDWARE SETUP 1.3. INTERFACE BOARD DESCRIPTION

STB80N

Abstract: SC07580 E03L GC755
Contextual Info: s = 7 S Ä 7# G S - T H O M S O N « « L E M « ! E03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RDS on S T B 8 0 N E 0 3 L -0 6 30 V < 0 .0 0 6 Q Id 80 A . TYPICAL R DS(on) = 0.005 Q m EXCEPTIONALdv/dt CAPABILITY

L5970D

Abstract: E03L STPS2 stps2 transistor
Contextual Info: L5970D  UP TO 1A STEP DOWN SWITCHING REGULATOR UP TO 1A OUTPUT CURRENT OPERATING INPUT VOLTAGE FROM 4.4V TO 36V 3.3V / ±2% / REFERENCE VOLTAGE OUTPUT VOLTAGE ADJUSTABLE FROM 1.2V TO 35V LOW DROPOUT OPERATION: 100% DUTY CYCLE 250KHz INTERNALLY FIXED FREQUENCY

3.58 mhz ceramic resonator

Abstract: sound MEMORY 5V 28 pins MSM6352 MSM6352-XXRS
Contextual Info: O K I Semiconductor MSM6352 Built-in DTMF Generator 4-Bit Microcontroller GENERAL DESCRIPTION The M SM 6352 is a high-performance 4-bit m icrocontroller em ploying com plem entary metal oxide sem iconductor technology. The use o f this device for a repertory telephone, which employed a

SC06140

Abstract: STP60NE03L-10 STP60N 10
Contextual Info: = 7 S G S -T H O M S O N k 7# [MgMilLie'irifiiiSMfSS E03L-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V ds s S T P 60N E 03L-1 0 30 V R Id d S o i i < 0 .0 1 o a 60 A . TYPICAL R Ds(on) =0.007 . EXCEPTIONAL dv/dt C APABILITY

GC755

Contextual Info: s= 7 SGS-THOMSON Ä 7# « « L E M « ! E03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss R d S o n Id S T P 8 0 N E 0 3 L -0 6 30 V < 0 .0 0 6 Q 80 A TYPICAL R DS(on) = 0.005 Q EXCEPTIONALdv/dt CAPABILITY

ME03

Abstract: E03L
Contextual Info: ‘ON 5-ñ B DATE DCN i i ñ § D E S C R I P T IO N NO. ¡go CL JK f t REV. 17901^0 L PS tì. ^ CHK. DR. & m APPD. oNlMvya D E S I G N A T I O N APPLICABLE '°p' CO NNECT O R MEOB—* * P—D 4 L T 1 —* * E M E 0 3 - L * / * S - D 4 T * — A * E S E R IE S