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GC755 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STP80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T P 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY	OCR Scan	STP80NE06-10	PDF
STB80N Abstract: SC07580 E03L GC755 Contextual Info: s = 7 S Ä 7# G S - T H O M S O N « « L E M « ! STB80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss RDS on S T B 8 0 N E 0 3 L -0 6 30 V < 0 .0 0 6 Q Id 80 A . TYPICAL R DS(on) = 0.005 Q m EXCEPTIONALdv/dt CAPABILITY	OCR Scan	STB80NE03L-06 STB80N SC07580 E03L GC755	PDF
Contextual Info: STB80NE03L-06 N - CHANNEL 30V - 0.005Î2 - 80A - D^PAK STripFET POWER MOSFET TYPE S TB 80N E 03L-06 V R D S o n Id < 0 .0 0 6 Q. 80 A dss 30 V . • TYPICAL RDS(on) =0.005 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . LOW GATE CHARGE 100 °C	OCR Scan	STB80NE03L-06 03L-06 O-263	PDF
GC755 Contextual Info: Philips Semiconductors Preliminary specification Low voltage 8-bit microcontrollers TELX family CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 BLOCK DIAGRAM 4 FUNCTIONAL DESCRIPTION 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 4.10 4.11 4.12 4.13 4.14 4.15 4.16 4.17 4.18	OCR Scan		PDF
GC755 Contextual Info: s= 7 SGS-THOMSON Ä 7# « « L E M « ! STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V dss R d S o n Id S T P 8 0 N E 0 3 L -0 6 30 V < 0 .0 0 6 Q 80 A TYPICAL R DS(on) = 0.005 Q EXCEPTIONALdv/dt CAPABILITY	OCR Scan	STP80NE03L-06 GC755	PDF
P025P Contextual Info: STW80NE06-10 N - CHANNEL 60V - 0.0085a - 80A - TO-247 STripFET " POWER MOSFET TYPE Voss R D S o n Id STW 80NE06-1 0 60 V <0.01 Î2 80 A . TYPICAL R d s (oii) = 0.0085 Q m EXCEPTIONAL dv/dt CAPABILITY . . 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION	OCR Scan	STW80NE06-10 0085a O-247 80NE06-1 P025P	PDF
Contextual Info: STW80NE06-10 N - CHANNEL 60V - 0.0085ft - 80A - TO-247 STripFET ” POWER MOSFET TYPE S T W 8 0 N E 0 6 -1 0 V dss 60 V R d Id S o i i <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY . 100% AVALANCHE TESTED . APPLICATION ORIENTED	OCR Scan	STW80NE06-10 0085ft O-247 P025P	PDF
STB80NE06-10 Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie'ü’[Ki@RDD S$ STB80NE06-10 N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE ” POWER MOSFET TYPE S T B 8 0 N E 0 6 -1 0 V dss 60 V R d Id S (o i i ) <0.01 Q. 80 A . • TYPICAL RDS(on) = 0.0085 EXCEPTIONAL dv/dt CAPABILITY	OCR Scan	STB80NE06-10 O-263 STB80NE06-10	PDF
80NE06-10 Contextual Info: STW80NE06-10 N - CHANNEL 60V - 0.0085Ü - 80A - TO-247 STripFET ” POWER MOSFET TYPE STW 80NE06-1 0 • . . . V dss 60 V R d Id S o ii <0.01 Q. 80 A TYPICAL RDS(on) = 0.0085 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED	OCR Scan	STW80NE06-10 O-247 80NE06-1 80NE06-10	PDF