E2 MARKING SOT Search Results

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

DIN 6784 c1

Abstract: BCR108S BFS17S E6327 VPS05604
Contextual Info: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

BFS17S

Abstract: VPS05604 NPN marking MCs
Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

Contextual Info: BFS17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363

VPS05604

Abstract: bfs 11
Contextual Info: BFS 17S NPN Silicon RF Transistor 4
For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363

ic7001

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

marking s6 sot363

Contextual Info: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical

Contextual Info: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

183S

Abstract: Q62702-C2377
Contextual Info: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363

Siemens SRS 20

Contextual Info: SIEMENS SIPMOS Small-Signal Transistors BSS 101 BSS 131 VDS = 240 V /D = 0 .1 3 /0 .1 0 A ^DSIonl = 1 6 0 • N channel • Enhancement mode • Packages: TO-92, SOT-231 Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

6c2 transistor

Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
Contextual Info: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor

BCV62

Contextual Info: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code

bss138

Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
Contextual Info: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)

VPS05178

Contextual Info: BCV 62 PNP Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking

BCV61

Abstract: BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2
Contextual Info: BCV61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and V BE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking

transistor marking T2

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

BCV61

Abstract: BCV61A BCV61B BCV61C VPS05178
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

BCV61

Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

e2 marking

Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

marking 1ks

Abstract: BCV61
Contextual Info: BCV61 NPN Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration

BCV62B

Abstract: marking 3ks BCV62 BCV62A BCV62C VPS05178
Contextual Info: BCV62 PNP Silicon Double Transistor 3
To be used as a current mirror
Good thermal coupling and VBE matching 4
High current gain
Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration

marking JC

Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Contextual Info: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method