E54915 Search Results
E54915 Price and Stock
Thomas & Betts LE54915BE10PH |
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Thomas & Betts LE54915BEUB |
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ABB Group LE54915BE10PH54915BE 5/8 BOLT WITH PEEP HOLE |
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ABB Group LE54915BEPH54915BE WITH PEEP HOLE |
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E54915 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by MOCD217/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all O utline Optoisolators MOCD217 Transistor Output Low Input Current [C TR = 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a |
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MOCD217/D MOCD217 MOCD217 | |
Contextual Info: MOTOROLA Order this document by MOCD211/D SEMICONDUCTOR TECHNICAL DATA Dual Channel Small Outline Optoisolators MOCD211 Transistor Output [C TR = 20% Min] The MOCD211 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a |
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MOCD211/D MOCD211 MOCD211 | |
MOC3001
Abstract: MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, 30A-02 MOC3001 MOC3000 scr optoisolator mr5060 SCR GATE DRIVER IEC204AXK VDE0113 VDE0160 VDE0832 VDE0833 | |
MOC119
Abstract: VDE0160 VDE0832 VDE0833 IEC-204
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 30A-02 MOC119 VDE0160 VDE0832 VDE0833 IEC-204 | |
Y14SM
Abstract: VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, 30A-02 Y14SM VDE0883 MOC8030 MOC8050 VDE0160 VDE0832 VDE0833 IEC204 IEC-204 | |
opto d213
Abstract: d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint
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MOCD213/D MOCD213 MOCD213/D* OptoelectronicsMOCD213/D opto d213 d213 opto D213 MOCD213 RS481A MOCD213 T&R soic8 footprint | |
MOCD211
Abstract: D211 RS481A motorola opto coupler
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MOCD211/D MOCD211 MOCD211 MOCD211/D* OptoelectronicsMOCD211/D D211 RS481A motorola opto coupler | |
MOC221
Abstract: MOC223 RS481A soic8 footprint motorola silicon dual diode common cathode MOC221 MOTOROLA
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MOC223/D MOC223 MOC223/D* MOC221 MOC223 RS481A soic8 footprint motorola silicon dual diode common cathode MOC221 MOTOROLA | |
UJT-2N2646 PIN DIAGRAM DETAILS
Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
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Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402 | |
triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
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SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 | |
EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
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MOC256
Abstract: MOC256M
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OC256/D MOC256 E54915 RS481S MOC256M | |
MOC205
Abstract: OC206
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RS481A MOC205 OC206 | |
motorola h11l1Contextual Info: MOTOROLA SEM IC O N D U C TO R TECHNICAL DATA 6-P in D IP O p to is o la to rs Logic Output . . . g a lliu m arsen id e IRED o p tic a lly c o u p le d to a h ig h -sp ee d in te g ra te d d e te c to r w ith S c h m itt trig g e r o u tp u t. D esigned fo r a p p lica tio n s re q u irin g e le c tric a l is o la tio n , fast |
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H11L1 motorola h11l1 | |
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VQE 22 led
Abstract: transistor sec 623 transistor sec 621 MOCD208 transistor D207
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RS481A CD207 MOCD208 VQE 22 led transistor sec 623 transistor sec 621 MOCD208 transistor D207 | |
C8050
Abstract: C3050
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E54915 30A-02 C8050 C3050 | |
aiou
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, IEC204/VDE0113 30A-02 730D-02 aiou H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A ge h11a transistor BC 176 | |
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA 4N25 4N25A 4N26 4N27 4N28 6-P in D IP O p to is o la to rs Transistor Output These devices co n sist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r detector. |
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE110b, 30A-02 | |
MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
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b3b7255 MQC8060/D E54915^ C13S0 OJJ20 730B-02 730C-02 730D-Q2 MOC8060 ANSI 60 CE01 Motorola optoisolator lead form options | |
Contextual Info: MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA 4N 35 4N 36 4N37 6-Pin DIP Optoisolators Transistor Output T he se d evices co n sist of a gallium arsenide infrared em itting d iod e optically coup led to a m onolithic silicon pho to tran sistor detector. 6-PIN DIP |
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, E0110b 30A-02 | |
VDE-0883Contextual Info: MOTOROLA h S E M IC O N D U C T O R TECHNICAL DATA C N Y 1 7 -1 C N Y 1 7 -2 C N Y 1 7 -3 6-P in D IP O p to is o la to rs T ra n sisto r O u tp u t These devices co nsist o f a g a lliu m arsenide infrare d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silic o n p h o to tra n s is to r detector. |
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, VDE-0883 | |
D217 OPTO
Abstract: MOCD217 opto D217
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MOCD217 RS481A MOCD217 TA-25 D217 OPTO opto D217 | |
Contextual Info: MOTOROLA m SEM ICO NDUCTO R TECHNICAL DATA M O C 8 1 11 M O C 8112 M O C 81 13 6-P in D IP O p to iso lato rs Transistor Output These d evices co n sist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly co up le d to a m o n o lith ic silico n p h o to tra n s is to r d etector. The in te rn a l base-to-Pin 6 co nn e ctio n |
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E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, VDE0110b, | |
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA H11B1 H11B2 H11B3 6-Pin DIP O ptoisolators Darlington Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. They are designed for use in applica |
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H11B1 H11B2 H11B3 E54915 IEC380/VDE0806, IEC435/VDE0805, IEC65/VDE0860, 30A-02 |