ECH86 Search Results

ech8 pattern

Abstract: ECH8651R ECH8651R-TL-H ECH8651 A10105
Contextual Info: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

Contextual Info: ECH8671 Ordering number : ENA1456A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8671 General-Purpose Switching Device Applications Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: Ordering number : ENA2243 ECH8697R N-Channel Power MOSFET 24V, 10A, 11.6mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance • 2.5V drive • Common-Drain Type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch

82306

Abstract: ECH8621R
Contextual Info: ECH8621R Ordering number : EN8718 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8621R General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Best suited for lithium battery applications. 2.5V drive. Composite type, facilitating high-density mounting.

A1010 5V

Abstract: ECH8651R A1010-3 ECH8651
Contextual Info: ECH8651R Ordering number : ENA1010 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: Ordering number : ENA1436A ECH8674 P-Channel Power MOSFET http://onsemi.com –12V, –5A, 41mΩ, Single ECH8 Features • • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Protection diode in Specifications

Contextual Info: Ordering number : ENA2185B ECH8690 Power MOSFET 60V, 4.7A, 55mΩ -60V, -3.5A, 94mΩ Complememtary Dual ECH8 http://onsemi.com Features • On-State Resistance Nch:RDS on 1=42mΩ(typ.) Pch:RDS(on)1=73mΩ(typ.) • 4V drive • Nch+Pch MOSFET • Protection diode in

Contextual Info: ECH8663R Ordering number : ENA1184 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8663R General-Purpose Switching Device Applications Features • • • • • • Low ON-resistance. Built-in gate protection resistor. 2.5V drive. Best suited for LiB charging and discharging switch.

Contextual Info: Ordering number : ENA2314A ECH8695R N-Channel Power MOSFET 24V, 11A, 9.1mΩ, Dual ECH8 Common Drain http://onsemi.com Features • Low On-resistance  2.5V drive  Common-drain type  Protection diode in  Built-in gate protection resistor Best suited for LiB charging and discharging switch

ECH8631

Contextual Info: ECH8631 注文コード No. N 8 2 7 4 ECH8631 P チャネル MOS 形シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・複合タイプであり高密度実装可能。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃

Contextual Info: ECH8651R Ordering number : ENA1010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8651R General-Purpose Switching Device Applications Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor

MARKING WY

Contextual Info: ECH8653 Ordering number : ENA0851A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8653 General-Purpose Switching Device Applications Features • • • Low ON-resistance Best suited for LiB charging and discharging switch Halogen free compliance

Contextual Info: ECH8656 Ordering number : EN9010A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8656 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=13mΩ (typ.) Halogen free compliance Protection diode in • • 1.8V drive

MARKING WY

Abstract: A0851
Contextual Info: ECH8653 Ordering number : ENA0851 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8653 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. 4V drive. Best suited for LiB charging and discharging switch.

Contextual Info: Ordering number : ENA1562A ECH8602M N-Channel Power MOSFET http://onsemi.com 30V, 6A, 30mΩ, Dual ECH8 Features • • • 2.5V drive Common-drain type Protection diode in • • Best suited for LiB charging and discharging switch Halogen free compliance

ECH8652

Contextual Info: ECH8652 注文コード No. N A 0 9 3 5 三洋半導体データシート N ECH8652 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・1.8V 駆動。 ・複合タイプであり高密度実装可能。

A1358

Abstract: ECH8660 pch 100v ech8 A1358-2
Contextual Info: ECH8660 注文コード No. N A 1 3 5 8 三洋半導体データシート N ECH8660 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 型電解効果トランジスタを 1 パッケージ

sm325

Abstract: ECH8620 A0659-6 IT10628
Contextual Info: ECH8620 注文コード No. N A 0 6 5 9 三洋半導体データシート N ECH8620 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 型電界効果トランジスタを 1 パッケージに

A1259

Contextual Info: ECH8662 注文コード No. N A 1 2 5 9 三洋半導体データシート N ECH8662 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・2.5V 駆動。 ・ハロゲンフリー対応。

A1011

Abstract: ech8655r
Contextual Info: ECH8655R 注文コード No. N A 1 0 1 1 三洋半導体データシート N ECH8655R N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・低オン抵抗。 ・ゲート保護用抵抗内蔵。 ・2.5V 駆動。

Contextual Info: Ordering number : ENA1777A ECH8661 Power MOSFET http://onsemi.com 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 Features • • • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and

Contextual Info: Ordering number : EN9010A ECH8656 N-Channel Power MOSFET http://onsemi.com 20V, 7.5A, 17mΩ, Dual ECH8 Features • • • ON-resistance RDS on 1=13mΩ (typ.) Halogen free compliance Protection diode in • • 1.8V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1456A ECH8671 P-Channel Power MOSFET http://onsemi.com –12V, –3.5A, 77mΩ, Dual ECH8 Features • • • 1.8V drive Composite type, facilitating high-density mounting Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C