EDO RAM 16MX4 Search Results

Contextual Info: 128 Megabit CMOS EDO DRAM DP3ED4MX36RKY5-CM PRELIMINARY DESCRIPTION: The DP3ED4MX36RKY5-CM is the 4 Meg x 36 Dynamic RAM module that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of two 4 Meg x 16 and one 16Mx4 Dynamic RAM’s that are configured

KMM53232004BK

Abstract: KMM53232004BKG
Contextual Info: DRAM MODULE KMM53232004BK/BKG KMM53232004BK/BKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53232004B is a 32Mx32bits Dynamic RAM high density memory module. The Samsung KMM53232004B consists of sixteen CMOS 16Mx4bits

DDS-30

Contextual Info: KMM366F1680AK KMM366F1600AK DRAM MODULE KMM366F1680AK & KMM366F1600AK EDO Mode without buffer 16Mx64 DRAM DIMM based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F168 0 0AK is a 16M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: HYMA6V16730E14HGTG 16Mx72, 3,3V, 4K Ref, EDO Description The HYMA6V16730E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin

16Mx4bit

Abstract: KMM53616004BK KMM53616004BKG
Contextual Info: DRAM MODULE KMM53616004BK/BKG KMM53616004BK/BKG EDO Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53616004B is a 16Mx36bits Dynamic RAM high density memory module. The Samsung KMM53616004B consists of eight CMOS 16Mx4bits DRAMs

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG KMM53216004BK/BKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53216004B is a 16Mx32bits Dynamic RAM high density memory module. The Samsung KMM53216004B consists of eight CMOS 16Mx4bits DRAMs

Contextual Info: KMM374F1680AK KMM374F1600AK DRAM MODULE KMM374F1680AK & KMM374F1600AK EDO Mode without buffer 16Mx72 DRAM DIMM with ECC based on 16Mx4, 8K & 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F168 0 0AK is a 16M bit x 72 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM53232004AK/AKG KMM53232004AK/AKG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53232004A is a 32Mx32bits RAM high density KM M 53232004A memory consists of module. sixteen Dynamic The Samsung

Contextual Info: HYMA6V16733E14HGTG 16mx72, 3.3V, 8K Ref, EDO Description The HYMA6V16733E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin

M53216

Abstract: 16Mx32-bit
Contextual Info: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification

KMM53632004BK

Abstract: KMM53632004BKG
Contextual Info: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and

TAA CAPACITOR

Contextual Info: HYMA6V32730E14HGTG 32Mx72 buffered EDO DRAM DIMM PRELIMINARY Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in

64Mb simm

Abstract: VIL22 simm 64MB 72 simm dram
Contextual Info: 64MB 72 PIN EDO DRAM SIMM With 16Mx4 3.3VOLT TS16MED3260V Description Dimensions The TS16MED3260V is a 16M by 32-bit dynamic RAM module with 8pcs of 16Mx4 DRAMs Side Millimeters Inches assembled on the printed circuit board. A 107.95 ± 0.400 4.250 ± 0.016

Contextual Info: HYMA6V32730E14HGTG 32MX72, 3.3V, 4K Ref, EDO Description The HYMA6V32730E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in

Contextual Info: KMM374F320 8 0CK1 DRAM MODULE KMM374F320(8)0CK1 EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F320(8)0CK1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM374F320 8 0BK1 DRAM MODULE KMM374F320(8)0BK1 EDO Mode without buffer 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F320(8)0BK1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung

TAA CAPACITOR

Contextual Info: HYMA6V16730E14HGTG 16Mx72 buffered EDO DRAM DIMM PRELIMINARY Description The HYMA6V16730E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin

TAA CAPACITOR

Contextual Info: HYMA6V16733E14HGTG 16Mx72 buffered EDO DRAM DIMM PRELIMINARY Description The HYMA6V16733E14HGTG familiy is an 16Mx72 bits Dynamic RAM Module which is assembled 18 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package mounted on a 168pin

Contextual Info: 168PIN EDO FPM Buffered DIMM 256MB With 16Mx4 60ns TS32MLE72V6J Dimensions Description The TS32MLE72V6J is a 32M x 72 bit Dynamic RAM Side Millimeters Inches high-density memory module. The TS32MLE72V6J A 176.055±0.40 6.931±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs

TCA 789

Contextual Info: HYMA6V32733E14HGTG 32Mx72, 3.3V, 8K Ref, EDO Description The HYMA6V32733E14HGTG familiy is an 32Mx72 bits Dynamic RAM Module which is assembled 36 pieces of 16Mx4bit DRAMs in 32pin TSOP-II package and two 16bit driver ICs in 48pin TTSOP package and 8bit driver IC in

Contextual Info: DRAM MODULE KMM53632004BK/BKG KMM53632004BK/BKG EDO Mode 32M X 36 DRAM SIMM Using 1 6Mx4 & 1 6Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632004B is a 32Mx36bits Dynamic RAM high density memory module. The Samsung KMM53632004B consists of sixteen CMOS 16Mx4bits and

Contextual Info: KMM374F160 8 0CK1 DRAM MODULE KMM374F160(8)0CK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0CK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung

80BK1

Contextual Info: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0BK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung

Contextual Info: 168PIN EDO FPM Buffered DIMM 256MB With 16Mx4 50ns TS32MLE72V5Y Dimensions Description The TS32MLE72V5Y is a 32M x 72 bit Dynamic RAM Side Millimeters Inches high-density memory module. The TS32MLE72V5Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs