EG AND G LASER DIODE Search Results

Contextual Info: E G & G/CANADA/OPTOELEK Il 47E D • 3D3DblO ■_< — GODDPòfl 2 ■ CANA 1550nm High Power Pulsed Laser C Ij K IJ OPTOELECTRONICS C86091E T-y -cs ■ ■ ■ ■ H T he C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage

EG*G Optoelectronics

Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Contextual Info: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage

RLD78PA

Abstract: RLD-78PA 78P30 RLD-78MA RLD-78N30 laser diodes for optical source RLD-78P30
Contextual Info: AIGaAs double-hetero visible laser diodes RLD-78M30 RLD-78P30 RLD-78N30 These were the world’s first mass-produced laser diodes that were manufactured by molecular beam epitaxy and introduced with the RLD-78MA and RLD-78PA laser diodes. These diodes were especially developed for products

STC25

Contextual Info: bEE » • b427S2S ÜD37Sbb fi7G BNECE Z' N E C ELECTRONICS INC / LASER DIODE N D L 5 6 5 0 1 550 nm OPTICAL FIBER COMM UNICATIONS InGaAsP PHASE-SHIFTED DFB-DC-PBH LASER DIODE DESCRIPTION N D L 5 6 5 0 D is a 1 550 nm D F B {Distributed Feed-back laser dio de e specially designed fo r long distance high cap a city transm is­

CL-808-015W-430

Abstract: 10w laser diode 808 nm 1000 mw 6080WA
Contextual Info: Product Specifications Features • Up to 15W CW output power. • High Quality, Reliability, & Performance Applications • Solid State Pumping • Graphics • Medical/Dental • Industrial • Defense 808nm Multi-Mode Laser Diodes 400µm emitter 8W-15W

"WORM"

Contextual Info: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE

ML961B8S

Abstract: S-25 1480 nm diode laser H Beam photodiode 1490 nm
Contextual Info: MITSUBISHI LASER DIODES ML9XX8 SERIES InG aA sP-M Q W HIGH POWER LASER DIODES TYPE NAME FEATURES DESCRIPTION M L9X X8 serie s are InG aA sP high po w e r laser dio d e s w hich p ro vid e s a sta b le , single em is s io n w a v e le n g th of tra n s v e rs e

2 Wavelength Laser Diode

Abstract: OL317N OL327N cd laser unit highpower laser
Contextual Info: O K I electronic components QL307W, OL317N, OL327N 1.3 urn High-Power Laser Diode GENERAL DESCRIPTION The OL307N, OL317N and OL327N are 1.3 |im , InG aAsP/InP laser diodes that can be light sources for fiber-optic communication system s and optical instruments.

Contextual Info: PCO-7110 FIXED PULSE WIDTH LASER DIODE DRIVER MODULE • • • • • The PCO-7110 is a compact, economical OEM pulsed laser diode driver module.It is designed to provide extremely fast, high current pulses to drive laser diodes in range finder, LIDAR,atmospheric

Contextual Info: Panasonic Semiconductor Laser LNC801PS High Power Output Semiconductor Laser • Outline p4.3±0.1 03.55+0.1 The LNC801PS is a GaAlAs laser diode w hich provides stable, continuous, single m ode oscillation o f near infrared light at room temperature. This product can be used in a wide range of light source

Contextual Info: SANKEN ELECTRIC U S A -i HE » II 7EHD741 DDQG137 7 I Ultra Fast Recovery Diodes B V rm:70~1000V B lo :0.4~5.0A SFPL/AG/AL/EG/EL/RG/RL Characteristics V rsm V lo (A ) twith Fin Rating Type S F P L -5 2 200 200 0.9 S F P L -6 2 200 200 1.0. 1.0 AG 01V 70

Contextual Info: MITSUBISHI LASER DIODES ML6XX16 SERIES AIGaAs LASER DIODES TYPE NAME DISCRIPTION FEATURES M L6X X 16 serie s are high p o w e r A IG aA s s e m ico ndu ctor laser • O u t p u t 30 m W CW 4 0 m W (pulse) d io d e s • S h o r t astig m atic distance w h ic h

HL7801G

Abstract: HL7801 7801G
Contextual Info: HITACHI/ OP TOEL ECTRON ICS 1ÖE D • MMibEOS GOlDflñ? a ■ HL7801G GaAIAs LD D escription H L 7801G is a 0.78 /nm G aA IA s laser diode w ith d o u b le h etero ju n ctio n stru ctu re. It is su itab le as a light so u rce in laser beam prin­ te rs, laser lev elers an d various o th e r types o f optical

B 8F laser diodes

Contextual Info: MITSUBISHI LASER DIODES ML7XX8 SERIES InGaAsP— MQW— FP LASER DIODES ML701 B8R,ML725B8F,ML725C8F ML720J8S,ML720K8S TYPE NAME DESCRIPTION FEATURES M L7X X8 serie s are InG aA sP laser diod es w hich provides a s ta b le , s in g le w avele ngth tra n s v e rs e

Contextual Info: a DUAL LOOP 2.5Gbps LASER DIODE DRIVER ADN2840 Preliminary Technical Data FEATURES 2.5 Gbps Operation Typical rise/fall-time 80 ps Bias Current range 2 to 100 mA Modulation Current range 5 to 80 mA Monitor Photo Diode current 50 to 1300mA Closed loop control of Power and Extinction Ratio

2SC 1570

Abstract: EAM LD
Contextual Info: HL1521FG Laser Diode Description A H L 1 5 2 1 F G is a 1.55 /¿m In G a A sP laser diode with b u ried h e te ro stru c tu re . It is su itable as a light so u rce in h igh-bit-rate, lo ng-distance fiberoptic co m m u n icatio n s and v ario u s o th e r types o f optical eq u ip m en t.

LF400

Abstract: R-1525 OL561N-25 OL564N-25
Contextual Info: O K I electronic components OL561N-25, OL564N-25 1.55 |im High-Power Laser-Diode DIP Module GENERAL DESCRIPTION The OL561N-25 and OL564N-25 are 1.55 Jim, extremely high power laser-diode DIP modules with single-mode fiber pigtails. The Multi-Quantum Well MQW structure laser diodes achieve a single­

Contextual Info: ENGINEERING SPECIFICATIONS * T O T T O R I 'SAN YO E L E C T R I C C O . . LTD. LED DIVISION 5- 31 8 , T a c h i k a w a - c y o Tot tor 1 -sii i . 6 8 0 Date: J u n e 17, Japan 1993 LASER T y p e : DIODE S D L - L S 3 0 * v e r i f i e d a n d d i s t r i b u t e d by L E D d i v i s i o n ,

Contextual Info: SLD303V SONY, 500mW High Power Laser Diode Description Package Outline U n it: mm SLD303V are gain-guided, high-power laser diodes fabricated by MOCVD. MOCVD: Metal Organic Chemical Vapor Deposition Features • High power Recommended power o utp ut • Small operating current

Contextual Info: ADE-208-188 Z HSM125WK Silicon Schottky Barrier Diode for Battery Switch Preliminary Rev.O Oct. 1993 HITACHI Features Pin Arrangement • The H S M 125W K has tw o d ifferen t (V F- IF) chips, and can change the main battery to the backup battery automatically.

mitsubishi cab

Contextual Info: MITSUBISHI LASER DIODES ML7XX4 SERIES InGaAsP —MQW—DFB LASER DIODES TYPE NAME FEATURES DESCRIPTION M L7X X4 series are M Q W * — D F B * laser diod es em itting • E x c e lle n t low disto rtion cha racte ristic C S O typica l-60d B c/C T B typica l-65d B c

laser diode philips

Abstract: CQL61A sot148d Philips diode OPTICAL LASER PHILIPS
Contextual Info: Philips Components cqlsia _ A_ MEDIUM POWER DOUBLE HETEROSTRUCTURE AIGaAs LASER The CQL61A is a MOVPE grown gain guided double heterostructure laser diode. The laser delivers an o utput power o f 20 mW CW at 25 °C and a wavelength o f about 820 nm.

philips twin eye

Abstract: CQL20 t241 diode ftz869 diode code ae eg and g laser diode
Contextual Info: Philips Components CQL20 AIGaAs DOUBLE HETEROSTRUCTURE LASER-DIODE The C Q L 2 0 is designed for reading applications such as video/audio disc applications, optical memories, security systems etc. The index guided Buried Twin Ridge Substrate B T R S laser is constructed on a p-type gallium arsenide

TGS 830

Abstract: told laser diode toshiba TOLD151 Diode dx 2A Toshiba Laser Diodes
Contextual Info: TO SHIBA -CLASER/FBR O P T IO 01 DE I T C H T E S a □□It.lD? E § ^'^7-05* TOSHIBA LASER DIODES FOR OPTICAL INFORMATION PROCESSINGS Standard type Standard type can be used in wide range of application. Three package types are the 9mm-diameter round flange,