EGX16 Search Results

Contextual Info: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS, INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic

EDI4164MEV50SM

Abstract: ed09 EDI4164MEV-RP Edd 44 EDI4164MEV60SM EDI4164MEV60SI EDI4164MEV
Contextual Info: ^EDI EDI4164MEV-RP 4M egx16 EDO DRAM ELECTRONIC DESIGNS. INC 4 Megabit x 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 4M x16 DRAM allows the user 4 Meg x 16 bit CMOS Dynamic to capitalize on the cost advantage of using a plastic

Contextual Info: 1 MEG x 16 EDO DRAM |U|IC=RON MT4C1M16E5 MT4LC1M16E5 DRAM VrìfAlVl FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single power supply +3.3V ±0.3V or 5V ±10%

Contextual Info: W D EDI4161MEV-RP \ ELECTRONIC-DESIGN INC, 1 1 M e g X K EDO D RAM 7 Megabitx 16Dynamic RAM 33V, ExtendedData Out Features EDI's mggedized plastic 1 Mx16 DRAM allows the user to capitalize on the cost advantage of using a plastic compo- 1 Meg x 16 bit CMOS Dynamic

DQ131

Abstract: MT48LC16M16A2TG8E
Contextual Info: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron

Contextual Info: M il“ C a a iS J I L IL z 64Mb: x4, x8, x16 SDRAM MT48LC16M4A2 -4 Meg x 4 x 4 banks MT48LC8M8A2- 2 Meg x 8 x 4 banks MT48LC4M16A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron Web site: www.micron.com/mti/msD/htmi/datasheet.htmi

Contextual Info: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MICRON' I TECHNOLOGY, INC. M T48LC32M 4A2 - 8 Meg x 4 x 4 banks M T48LC16M 8A2 - 4 Meg x 8 x 4 banks M T48LC8M 16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron

Contextual Info: ADVANCE MICRON' I 256M b:X\ * 8 , X 1 6 TCCHWLOOY.INC. S D R A I V I MT48LC64M4A2 - 1 6 M e g x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet revisions, please refer to the Micron

Contextual Info: DENSE-PAC \í M I C K OS V S T 32 Megabit FLASH EEPROM DP5Z2ME16Pn3 M S PRELIMINARY DESCRIPTION: The D P 5 Z 2 M E 1 6 P n 3 "S L C C " devices are a revolutionary n e w m em ory subsystem using Dense-Pac M icrosystem s' ceram ic Stackable Lead less C hip

Contextual Info: 64 M E G :X 4e X nnX A M MICRON I TECHNOLOGY, INC. Q ^ ^ jy j MT48LC16M4A1 /A2 -4 Meg x 4 x 4 banks MT48LC8M8A1/A2 - 2 Meg x 8 x 4 banks MT48LC4M16A1/A2 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM FEATURES • PCIOO-compliant, includes CONCURRENT AUTO PRECHARGE

Contextual Info: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC I • W e g x W EDO DRAM 1Megabitx 16Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1 M xl 6 DRAM allows the user to capitalize on the cost advantage of using a plastic com po­ 1 Meg x 16 bit CMOS Dynamic

20 NAC 12 I T2

Abstract: Edd 44 EDI4161MEV-RP
Contextual Info: ^EDI EDI4161MEV-RP ELECTRONIC DESIGNS, INC. I • egx16 EDO DRAM 1Megabitx 16 Dynamic RAM 3.3V, Extended Data Out Features EDI's ruggedized plastic 1Mx16 DRAM allows the user to capitalize on the cost advantage o f using a plastic compo­ 1 Meg x 16 bit CMOS Dynamic

Contextual Info: DENSE-PAC MICROSYSTEMS 64 Megabit FLASH EEPROM DP5Z4MW16Pn3 P R E L IM IN A R Y D E S C R IP T IO N : Th e D P 5 Z 4 M W 1 6 P n 3 " S L C C " devices are a revolutionary new m em ory subsystem using D ense-Pac M icrosystem s' ceram ic Stackable Leadless C h ip

Contextual Info: MICRON SEMICONDUCTOR IN C MICRON I b3 E D 1 M EG DRAM MODULE • X blllSMT 32, 2 M E G X 0000032 HT T ■ URN MT8D132 16 D R A M M O D U L E 1 MEGx 32’ 2 MEGx 16 FAST-PAGE-MODE MT8D132 LOW POWER, POWER, LOW EXTENDED REFRESH (MT8D132 L) FEATURES PIN ASSIGNMENT (Top View)

PC133 registered reference design

Contextual Info: ADVANCE M IC R O N I 256Mb: x4 ’cx bXAM TECHNOLOGY, INC. MX l\ / l MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest full-length data sheet, please refer to the Micron

531030

Abstract: MSM27C1622BZ 02CM 27C131 27c822 27c832
Contextual Info: M ask RO M s 1 Meg 2 Meg 4 Meg I 8 Meg i I I i i 128Kx8 256K x 8 512K x 8 I I 1-Meg x 8 I 2-Meg x 8 I M SM 531020B M SM 531000B M SM 531030B M SM 531021B M S M 5 3 1001B M SM 531031B M SM 532021B M SM 532001B M SM 532031B M S M 5 34 0 21 C M S M 5 34 0 01 C