EN29 Search Results

EN2925

Abstract: 2SC4257
Contextual Info: Ordering number : EN2925 No. 2925 2SC4257 NPN Triple Diffused Planar Silicon Transistor High-Voltage Amp, High-Voltage Switching Applications Features • High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of H VP process unit

740-0007

Abstract: EN29GL064 6A000
Contextual Info: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

CPR5

Abstract: LC86000 LC7930 LC86104A m861 CNR MOV LC8600
Contextual Info: O rdering num ber : EN2967 C M O S LSI LC86104A Liquid Crystal Display Controller/ Driver, On-chip 4K bytes ROM and On-chip 168 bytes RAM 8-BIT SINGLE CHIP MICROCOMPUTER LC86104A The LC86104A m ic ro c o m p u te r is an 8-bit single chip m icrocom p uter with th e following Onchip fun ctio n al blocks:

295-03

Abstract: SB100-05H DC DC Converters Circuit diagrams
Contextual Info: Ordering number :EN2950A SB100-05H Schottky Barrier Diode Twin Type • Cathode Common 50V, 10A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1159A [SB100-05H] Features · Low forward voltage (VF max=0.55V).

EN2951

Abstract: SB300-05H N2-98t
Contextual Info: Ordering number :EN2951 SB300-05H Schottky Barrier Diode Twin Type • Cathode Common 50V, 30A Rectifier Applications Package Dimensions · High frequency rectification (switching regulators, converters, choppers). unit:mm 1160 [SB300-05H] Features · Low forward voltage (VF max=0.55V).

2SC3895

Abstract: 2039B
Contextual Info: O rdering num ber: EN2966B _ 2SC3895 NPN Triple Diffused Planar Silicon Transistor U ltrahigh-D efinition D isplay Horizontal Deflection Output Applications F e a tu re s • High speed tf= 100ns typ . •High breakdown voltage (Vqbo —1500V).

2SC4390

Abstract: ITR06668 ITR06669 VEBO-15V
Contextual Info: 2SC4390 Ordering number : EN2958B SANYO Semiconductors DATA SHEET 2SC4390 NPN Epitaxial Planar Silicon Transistor High hFE, AF Amplifier Applications Features • • • • • Adoption of MBIT process. High DC current gain hFE=800 to 3200 . Large current capacity (IC=2A).

rectifier sc-62

Contextual Info: SB05-05P Ordering number : EN2999C SANYO Semiconductors DATA SHEET SB05-05P Schottky Barrier Diode 50V, 500mA Rectifier Applications • High frequency rectification switching regulators, converters, choppers Features • • • • Fast reverse recovery time (trr max=10ns)

copper wire s.w.g 22

Abstract: swg copper wire 18SWG EN29454 EN29453 22swg swg copper wire datasheet 22 swg copper wire Halide 43C501D
Contextual Info: SOLDERING SOLDER WIRES, Flux-cored HAND LEAD-FREE SOLDER, ROSIN-FREE FLUX Lead-free solder wires employing a rosin colophony free flux conforming to EN29454. Ideal alternatives for tin/lead cored solder wires in most applications. Offered in a choice of two alloys, these solder wires can be used with existing processes, with minor increases to bit temperatures.

Contextual Info: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns

Contextual Info: I Ordering number: EN2925 _ _ _ 2SC4257 NPN Triple Diffused Planar Silicon Transistor SANYO i 1200V/30mA High-Voltage Amp, High-Voltage Switching Applications F e a tu re s •High breakdown voltage • Small Cob ■Wide ASO • High reliability Adoption of HVP process

Contextual Info: Ordering number : EN2965B N o .2965B 2SC3894 jj NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu r e s • H igh speed tf= 100ns typ . •H igh breakdown voltage (V c b o = 1500V).

en29lv160b

Abstract: EN29LV160A
Contextual Info: Eon Silicon Solution Inc. Migration Note EON Flash EN29LV160A to EN29LV160B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 04/22 2005 Eon Silicon Solution Inc. www.ession.com

EN29GL128

Abstract: cFeon EN29GL128H EN29GL128H
Contextual Info: EN29GL128H/L EN29GL128 128 Megabit 16384K x 8-bit / 8192K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Write operation status bits indicate program and erase operation completion • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

S29AL004D

Abstract: EN29LV400A
Contextual Info: Eon Silicon Solution Inc. Application Note Spansion Flash S29AL004D to Eon Flash EN29LV400A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/23 2005 Eon Silicon Solution Inc. www.ession.com

S29GL032N

Abstract: EN29LV320B
Contextual Info: Eon Silicon Solution Inc. EN29LV320B V.S. S29GL032N Specification Comparison Phone : 886-3-5525686-331 , E-mail : THHsieh@essi.com.tw Page 1/4 Eon Silicon Solution Inc. 1. Part No. Eon : EN29LV320B Spansion : S29GL032N 2. Basic Features: The following features are identical with each other.

EN29GL064

Abstract: cFeon cFeon EN
Contextual Info: EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and

M29W128G

Abstract: M29W128GH M29W128GL
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com

EN29LV320

Abstract: EN29LV320A EN29LV320B
Contextual Info: Eon Silicon Solution Inc. Migration Note Eon Flash EN29LV320A to EN29LV320B This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 04/07 2005 Eon Silicon Solution Inc. www.ession.com

EN29LV160BB

Abstract: EN29LV160BT MX29LV160D MX29LV160DB MX29LV160DT 2249h EN29LV160b mxic
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV160B vs MXIC Flash MX29LV160D This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/12/01 2005 Eon Silicon Solution Inc. www.ession.com

MX29LV160CTTC-70G

Abstract: EN29LV160A mx29lv160cttc70g
Contextual Info: APPLICATION NOTE EN29LV160A EN29LV160A Application Note 16 Megabit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only The EN29LV160A is a high-performance 16-Megabit flash memory, which has the same features with the flash memories provided by other major vendors like AMD, Fujitsu and ST Micro. In

EN29LV040A-70SCP

Abstract: EN29LV040A EN29LV040A-70 555H SST39VF020 SST39VF020-70-4C-WHE
Contextual Info: Eon Silicon Solution Inc. Application Note SST Flash SST39VF020 to Eon Flash EN29LV040A This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/06/26 2005 Eon Silicon Solution Inc. www.ession.com

EN39SL160

Abstract: EN29SL160 WFBGA 02000H-02FFFH
Contextual Info: Eon Silicon Solution Inc. Application Note Eon Flash EN29SL160 vs. EN39SL160 This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2009/ 06/11

EN29LV640B

Abstract: EN29LV640T EN29LV641H EN29LV641L
Contextual Info: Eon Silicon Solution Inc. Page 1/7 EN29LV640T/B VS EN29LV641H/L 64Mb FLASH SPEC COMPARISON Part No. : EN29LV640T/B Issued date : 2008 / 04 / 15 Prepared by : FAE Engineer：Sunny Tai Approval by : FAE Manager：Jason Tseng This Application Note may be revised by subsequent