EQUIVALENT 2N6040 Search Results

2N6042

Abstract: 2N6042 equivalent
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

2N6044 equivalent

Abstract: 2N6041 6041 MOTOROLA 2N6043 2N6042 HA2020
Contextual Info: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors PNP 2 N 6 0 40 thru 2 N6 0 4 2 * . . . d e sig ned for g e n e ra l-p u rp o s e am p lifie r and lo w -s p e e d sw itch ing applications.

2N6041

Abstract: 2N6044 2n6041 motorola 1N582 2N6040-D 2N6044 MOTOROLA 1N5825 2N6040 2N6042 2N6043
Contextual Info: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.

2N6040

Abstract: 2N6041 2N6042 2N6043 2N6044 2N6045
Contextual Info: ON Semiconductor PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 2N6042 2N6043 * NPN 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain – hFE = 2500 Typ) @ IC = 4.0 Adc

2N6041 MOTOROLA

Abstract: 2N6045 MOTOROLA 2n6042 motorola 2N6043 MOTOROLA 2N6044 MOTOROLA 2N6041 1N5825 2N6040 2N6042 2N6041 application
Contextual Info: MOTOROLA Order this document by 2N6040/D SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications.

2NXXXX

Abstract: 2nxxx
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

2N6045G

Abstract: 2N6040 2N6042 2N6045 2N6040G 2N6041 2N6043 2N6044 transistor marking T2
Contextual Info: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium-Power Complementary Silicon Transistors Plastic medium-power complementary silicon transistors are designed for general-purpose amplifier and low-speed switching

2N6042G

Abstract: 2N6042 2n6043
Contextual Info: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc

2N6045G

Abstract: 2N6045 2N6040 2N6041 2N6042 2N6043 2N6044 2N6043G 2N6045 NPN POWER DARLINGTON
Contextual Info: PNP − 2N6040, 2N6042, NPN − 2N6043, 2N6045 2N6043 and 2N6045 are Preferred Devices Plastic Medium−Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching

equivalent 2N6040

Abstract: 2N6043 data sheet 400 watts amplifier circuit diagram 2N6040 2N6041 2N6042 2N6043 2N6044 2N6045 2NXXXX
Contextual Info: PNP 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* *Preferred Device Plastic Medium−Power Complementary Silicon Transistors . . . designed for general−purpose amplifier and low−speed switching applications. • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc

Contextual Info: PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc

2N6041

Abstract: 2N6042 2N6043 data sheet 2N6040 2N6043 2N6044 2N6045 2N6041 application
Contextual Info: ON Semiconductort PNP Plastic Medium-Power Complementary Silicon Transistors 2N6040 thru 2N6042 * NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc

BRX49 equivalent

Abstract: FR207 equivalent 4835D TYN 208 equivalent BDW84C equivalent BTA16-600B equivalent BCX38C equivalent MP 1048 EM q4003l4 TYN208
Contextual Info: Index/Cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 Central Part Number Page Industry Part Number 1N968B 122 1N2838B 118 IN 969B 122 1N2839B 129 1N 67 A 118 1N970B 122 1N2840B 129 Code Code Central Part Number

BTA08-600C equivalent

Abstract: BTA16-600B equivalent BDW84C equivalent TYN 208 equivalent FR207 equivalent 2N3668 MDA2506 mda 2060 1n5399 equivalent 1N4465
Contextual Info: index/cross Reference Industry Part Number Central Part Number Page Industry Part Number 1N 34A 118 1N 60 118 1N 67A Central Part Number Page Industry Part Number 1N 968B 122 1N2838B 129 1N 969B 122 1N2839B 129 118 1N 970B 122 1N2840B 129 1N 87A 118 1N 971B

MJE34 pnp

Abstract: 2N6041 application 2SC493 2SA1046 MJ15003 300 watts amplifier 2SC334 bc 617 transistor equivalent BUX98A pin configuration NPN transistor tip41c BU326
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors PNP 2N6040 thru 2N6042* NPN 2N6043 thru 2N6045* . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —

BIPOLAR TRANSISTOR 2n

Abstract: 2N 6042 u 6042 MOTOROLA 2N6043 2N6043 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors PNP . . . designed for general-purpose amplifier and low-speed switching applications. • • • • High DC Current Gain — hpE = 2500 Typ @ lc = 4.0 Adc

in5388

Abstract: 2N5161 germanium 4m28 Germanium drift transistor 2N5070 1NS248 2N5271 inverter welder 4 schematic
Contextual Info: THE SEMICONDUCTOR DATA LIBRARY r*^r* fe SER IES A V O LU M E II i«»* »^ 'i1? prepared by Technicallnformation Center The inform ation in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this inform ation does not convey to the purchaser of semiconductor

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

1N5160

Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
Contextual Info: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

AD581

Abstract: AD581J AD581K AD581L AD581S AD581T AD581U
Contextual Info: High Precision 10 V IC Reference AD581 FEATURES FUNCTIONAL BLOCK DIAGRAM Laser trimmed to high accuracy 10.000 V ±5 mV L and U models Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model)

Contextual Info: High Precision 10 V IC Reference AD581 FEATURES FUNCTIONAL BLOCK DIAGRAM Laser trimmed to high accuracy 10.000 V ±5 mV L and U models Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model)

AD5811

Abstract: ad581 2N6040 Three-Five Three-Five Systems AD581J AD581K AD581L AD581S AD581T
Contextual Info: High Precision 10 V IC Reference AD581 FEATURES FUNCTIONAL BLOCK DIAGRAM Laser trimmed to high accuracy 10.000 V ±5 mV L and U models Trimmed temperature coefficient 5 ppm/°C maximum, 0°C to 70°C (L model) 10 ppm/°C maximum, −55°C to +125°C (U model)