ES 688 AUDIO Search Results

Contextual Info: P h ilip s C o m p o n e n ts BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of Issue December 1990 NPN Darlington power transistors PINNING - SO T199 D ESC R IP TIO N PIN NPN epitaxial base Darlington transistors for audio output stages

ES688

Abstract: ess 1688f ES1688 msi motherboard circuit diagram ES1688F PC MOTHERBOARD oi CIRCUIT diagram audiodrive
Contextual Info: E S 1688 AudioDr'we DESCRIPTION FEATURES Single, mixed-signal, 16-bit stereo VLSI chip Record, compress, and playback voice, sound and music High-quality 20 voice, ESFM FM music synthesizer, patents pending 6 channel mixer with stereo inputs for line-in, CD-ROM, TV, and a

SG 5010

Abstract: 10sg15
Contextual Info: O SC O N , Al Solid Capacitors with Organic Sem iconductive Electrolyte SG For audio Series • This is optimum for digital audio and Hi-Fi V C R . • Since OS-CON has solid electrolyte and resin-sealed structure, it doesn't expose the phenomenon of element vibration.

noise cancellation IC

Abstract: audio compandor IC ECE capacitor
Contextual Info: P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n Audio processor-companding, VOX • and amplifier section O D ES C R IPTIO N FEATURES The SA5752 is a high performance low power audio signal processing system especially designed to meet the requirements for small

block diagram of 10 led vu meter

Contextual Info: Audio ICs Fluorescent display tube level meter driver, 16-point x 2 channel, VU scale, bar display BA6800AS The BA6800AS is a tw o -ch a n n e l, 16 -p o in t flu o re sce n t d is p la y tu b e d rive r fo r VU -scale bar-level m eters. It uses a dynam ic-drive system and has both AC and DC inputs. The AC input m ode has a peak hold circuit. The IC features

BDV67DF

Abstract: BDV67CF BDV67B BDV67BF MC3774 BDV67AF NPN pnp MATCHED PAIRS BDV67C
Contextual Info: Philips Components BDV67AF/67BF/67CF/67DF Data sheet status Product specification date of issue December 1990 NPN Darlington power transistors PHILIPS INTERNATIONAL I_ _ I 5bE m I 7110fi2b 00433=16 33T B P H I N 1 ^ 3 3 -2 ^ P IN N IN G - S O T 1 9 9

wavetable

Abstract: ES1688
Contextual Info: ES1688 Œ iS A u d io D r m Product Brief ESS Technology, Inc. DESCRIPTION The ES1688 AudicDme® is a m ixed-signal single-chip solution that adds 16-bit stereo sound and FM m usic synthesis to personal com puters. It includes an em bedded microprocessor, a 20-voice

Contextual Info: NJM2352 LOW POWER SWITCHING REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE The N JM 2352 is the industry's first monolithic low power sw itch­ ing regulators available in an 8-lead m ini-D IP, and designed specifi­ c a lly for battery operated instrum ents. T h ey ea ch contain a 1.3V

IS1588

Abstract: Diode IS1588 NJM2352 NJM2352D NJM2352M free Voltage Regulator
Contextual Info: NJM2352 LOW POWER SWITCHING REGULATOR • GENERAL DESCRIPTION PACKAGE OUTLINE The N JM 2352 is the industry's first monolithic low power sw itch­ ing regulators available in an 8-lead m ini-D IP, and designed specifi­ c a lly for battery operated instrum ents. T h ey ea ch contain a 1.3V

CAPACITOR 224J

Abstract: 224j capacitor smd marking code 47-16 FX214LG FX224 audio scrambler FX214 224LG HP 4716 speech scrambler
Contextual Info: m m CML Semiconductor Products PRODUCT INFORMATION FX214 FX224 VSB* Audio Scrambler Publication D/214/3 July 1994 Features/Applications • "Variable Split-Band Frequency Inversion Voice Scrambler • Powersave Facility • Mobile or Cellular Radio Applications

IRF624

Contextual Info: H E 0 I 4 ÖS S 4 S 2 0G0ÜMÖL T-39-11 0 | Data Sheet No. PD-9.472A INTERNATIONAL RECTIFIER IOR INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRFG2 4 IRF6 S 5 IM-CHAIMNEI. 250 Volt, 1.1 Ohm HEXFET T0-220AB Plastic Package The HEXFET technology is the key to International Rec­

uPC5023

Abstract: oa203 PC5023 PC617 OA205 OA206 OA202 OA204 PC177 OF 8 pin DIP IC 1251
Contextual Info: Analog Master September,2001 Wave Wave We can find various size of waves generated in the ocean. The wave is sometimes energetic sometimes week according to the forces of nature and the gravitational effect of the moon, an infinitely continuous activity. We can also find another kind of wave in electric circuits: the wave

l 0534

Abstract: class E power amplifier 13.56 47245 Mullard KV165
Contextual Info: U.H.F. BEAM PO W ER TETR O D E QV2-250C QUICK REFERENCE DATA F o rced -a lr cooledbeam power tetrode suitable for u se as power am plifier, oscilla to r, frequency m ultiplier and linear am plifier for s . s . b . ap p lication s. The QV2-250C is of ceram ic construction.

2SA1046

Abstract: 2N3055 BU108 transistor K 3596 BU326 BU100 TL MJE2955T MJE3055T 2N3174 2SC936
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6251 High Voltage NPN Silicon Power Transistors 15 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 175 WATTS . . . designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications.

sumida IFT 10.7MHz

Abstract: sumida 10.7mhz coil NJM2241M NJM2236 NJM2236AL NJM2241 sumida 455 RIN24 bpw bpw b5 sumida ift coil
Contextual Info: NJM 2241 AM/FM RADIO • GENERAL DESCRIPTION ■ PACKAGE OUTLINE T h e N JM 2241 is m o n o lith ic integrated circu it in a 2 4 -le a d sm a ll o u tlin e p a c k a g e d e s ig n e d fo r u se in 3 - 6 V p r o ta b le A M /F M ra d io receivers. T h e fu n c tio n s in c o r p o r a te d are A M R F a m p lifie r , A M m ix e r ,

nec a 634

Abstract: Nec K 872 NEC Ga FET C band FET transistor s-parameters NEC 1132 NEC Ga FET marking D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

NEC K 2500

Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz

DAC89EX

Abstract: dac 89 DAC-89 DAC89 IR2E02 comdac mp 1010 bef MP 1008 es ic MP 1008 es
Contextual Info: DAC-89 pm! CO M D AC COM PANDING D/A CONVERTER "A" LAW) P r e c i s i o n M o n o l i t h i c s I n c. FEATURES C O M D A C ® T R A N S F E R C H A R A C T E R IS T IC • 11-Bit Accuracy and Resolution Around Zero • Sign Plus 66dB Dynamic Range • True Current Outputs: 5V to +18V Compliance

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

21134 015

Abstract: nec K 3570 T 318 TE 2395 marking v67 of ic ST 4051
Contextual Info: PRELIMINARY DATA SHEET_ Hetero Junction Field Effect transistor NE38018 L to S BAND LOW NOISE AMPLIFER N-CHANNEL HJ-FET FEATURES O Super Low noise figure & High Associated Gain NF = 0.55 dB typ. Ga = 14.5 dB typ. OlPs = 22 dBm V67 , OlPs = 23 dBm (V68) typ. at f = 2 GHz

TC8835BF

Abstract: TC8835 M41256A TC8835BN TC8835AN TC8835N
Contextual Info: TC8835N/F-1 0025347 a TOSHIBA 1. stt « t o s 3 UC/UP bME GENERAL T h e T C 8835 is a sin g le ch ip CM O S L S I for voice re c o rd in g / p la y -b a c k u s in g th e A D M ( A d a p tiv e D e lta M o d u la tio n ). I t com poses a voice re c o rd in g sy s te m w ith a d y n a m ic R A M for voice m em o ry a n d

comdac

Abstract: dac 89 DAC-89 dac89
Contextual Info: DAC-89 COMDAC: COMPANDING D/A CONVERTER “A" LAW] iY I d iio I it h ics Ine CO M D AC® T R A N S F E R C H A R A C T E R IS T IC FEATURES • • • • • • • • • 11-Bit A ccu racy and Resolution Around Zero Sign Plus 66dB D ynam ic Range True Current Outputs: -5V to +18V Com pliance

7 segment display sm 42056

Abstract: 7 Segment sm 42056 7 segment display sm 42056 national instrument kp series stepper motor japan servo co ru 94v0 ltc 126 sm 42056 siemens SID 801 smd marking 271 Sot helipot 7286 r10k l.25 helipot 7286 potentiometer
Contextual Info: SI technologies ' CORPORATION THIRD EDI TI ON .Ü a IV! • m ? , ,I • Passive Netw orks f it k R e s i s t o r s?Vu. Chip • ^ fs< _ ' Power L * '• ^ Resistors ^ ~ * «s» -h r ,? 7 , ^ Trim m ers „ i * M r «2 • i rP Di i ¿r1" Me ¡t f r osition

PCF5001

Abstract: QFP32 S028 UAA2080 UAA2080H UAA2080T UAA2080U sot358bb3
Contextual Info: b b S 3 clS4 ÜÜT3öb5 300 « S I C 3 Philips Semiconductors Product specification Advanced pager receiver UAA2080 FEATURES GENERAL DESCRIPTION • Wide frequency range up to 512 MHz The UAA2080 is a high performance low power radio receiver circuit primarily intended for VHF and UHF