ESH B 001 12 Search Results

varo semiconductor

Abstract: MT4C4001 MT4C4001J MT4C4001JDJ-6 MT4C4001JS mtc4001 MT4000
Contextual Info: MT4C4001J S 1 MEG X 4 DRAM MICRON ft stiacoNOucTOH«c- 1 MEG x 4 DRAM DRAM STANDARD OR SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • 1,024-cycle refresh distributed across 16ms (MT4C4001J) or 128ms (MT4C4001J S) • Industry-standard pinout, timing, functions and

Contextual Info: 16 14 15 13 12 11 10 8 SYMBOL D EFIN IT IO N A D I M E N S I O N WITHOUT AN I N S P E C T I O N REPORT S YMBOL DOES NOT R E Q U I R E I N S P E C T I ONo I T MAY BE C O N TR OL LE D ON AN I N D I V I D U A L COMPONENT DRAWING. M M ISSIN G TOTAL NO. OF

ESH B 001 12

Abstract: 42625 molex
Contextual Info: 13 II 12 IS 9 T 8 6 1 3 1 42625 2 42625-0002/0015 HOUSING DIM. A WITH HOOKS NO. OF CKTS 2.54) .100 (2.5 4 ± .0 5 ) „2 4 0 MIN. P IN IN S E R T I O N DEPTH S ID E EN TRY (5.08) O P T I O N A L VO ID ED CK T S E E C H A R T FOR T Y P E AND L O C A T I O N

wj da11 pin

Abstract: 22TCW
Contextual Info: •HYUNDAI H Y 5 1 1 6 1 6 0 B S e r ie s 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

recoma 18

Abstract: MH25708J-10 MH25708J-85 MH25708JA-10 MH25708JA-12 MH25708JA-85
Contextual Info: M IT S U B IS H I LS Is MH25708J-85,-10,-12,-15/ MH25708JA-85,-10,-12,-15 N IB B LE M ODE 2 6 2 1 4 4 -W O R D B Y 8 -B IT D YN A M IC RAM DESCRIPTION The M H 25 708 J, JA is 2 6 2 1 4 4 word x 8 bit dynam ic R A M and consists of nine industry standard 2 5 6 K x 1 dynamic

PD72120

Abstract: WW76H DA16-DA23 MPD72120 UPD72120
Contextual Info: NEC NEC Electronics Inc. Description Th e ^ P D 7212 0 A dvanced G raph ics Display C on troller A G D C displays ch aracters an d g rap hics on a raster scan device from co m m an ds and param eters received from a ho st processor or CPU. Features of th e A G D C

IC Pin 7476

Abstract: XDM32
Contextual Info: PRELIMINARY MICRON MT8LD264 X 2 M EG x 64 DRAM M ODULE 1 DRAM MODULE 2 MEG x 64 16 MEGABYTE, 3.3V, FAST PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) 168-Pin DIMM • JE D E C - and industry-standard pinout in a 168-pin, dual-in-line m em ory m odule (D IM M )

upd72120

Abstract: up down counter using IC 7476 PD72120 UPD72120R hj 4094 MPD72120 B7094 b7050
Contextual Info: NEC NEC Electronics Inc. Description The jiPD72120 Advanced Graphics Display Controller AG DC displays characters and graphics on a raster scan device from commands and parameters received from a host processor or CPU. Features of the AG DC include high-speed graphics drawing capabilities, video

Contextual Info: PRELIMINARY MT4C16256/7/8/9 S 256K X 16 WIDE DRAM I^ IIC Z R O N WIDE DRAM 256K x 16 DRAM FEATURES • SE L F REFRESH , or "S lee p M o d e " • In d ustry -stan dard x l6 pin ou ts, tim ing, functions an d p a ck a g e s • H igh -perform an ce C M O S silicon-gate process

HY5116164B

Abstract: HY5116164BJC wx19
Contextual Info: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: ti/ca /Electronics 7400 Series Surface Mount Technology SMT Dual In-Line Package (DIP) Switch , .100 Centerline A p p lica tio n S p e cification 114-1120 23 MAR 00 Rev B All numerical values are in metric units [with U.S. customary units in brackets]. Dimensions are in millimeters [and

ic DAD 1000

Abstract: UPD72120 PD72120 dwa 108 a DAD 1000 AD0-AD15 AD12 AD14 ESH B 001 12 CV 7476
Contextual Info: NEC NEC Electronics Inc. Description The fiPD72120 Advanced Graphics Display Controller AG DC displays characters and graphics on a raster scan device from commands and parameters received from a host processor or CPU. Features of the AG DC include high-speed graphics drawing capabilities, video

12034398

Abstract: delphi bolt 12034235 15492542 Delphi 12047680
Contextual Info: 16 14 15 13 12 10 11 8 SYMBOL D EF IN IT IO N A D I M E N S I O N WITHOUT AN I N S P E C T I O N REPORT S YMBO L DOES NOT REQUIRE INSPECTION. I T MAY BE CONTR OL LE D ON AN I N D I V I D U A L COMPONENT DRAWING. M TOTAL NO. OF SYMBOLS ON DRAW ING LAST NO.

Contextual Info: 16 15 14 13 12 11 10 8 SYMBOL DEFINITION THE NUMBER INSIDE THE SYMBOL CORRESPONDS TO THE NUMBER ON THE INSPECTION REPORT FOR THIS DRAWING/PART NUMBER M MISSING NUMBERS TOTAL NO, OF SYMBOLS ON DRAWING 9 LAST NO. USED 9 DWG STATUS DATE STG REV N/P CHG 21DE99 R 001

MB8101

Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
Contextual Info: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe

Contextual Info: • R ADVANCED W .\A p o w e r Te c h n o lo g y " APT5017SVR 500v 30a 0.170q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: DENSE-PAC 16 Megabit CMOS DRAM D P D 1M X 16 M 2 H 3 M ICROSYSTEM S PRELIMINARY D E S C R IP T IO N : The D PD 1M X1 6M 2H3 "S T A C K ” module is a re vo lu tio n ary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCO stacked and leaded for surface

t41l

Abstract: LC256 41LC256K32D4
Contextual Info: ADVANCE MT41 LC256K32D4 S 256K x 32 SGRAM p iC Z R O iS J 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM PULSED RAS, DUAL BANK, PIPELINED, 3.3V OPERATION FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; colum n address can be

3055t

Abstract: diode zd 22
Contextual Info: APT20M45SVFR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

ESH B 001 12

Contextual Info: MOTOROLA S EM IC O N D U C T O R TECHNICAL DATA MCM40100 MCM40L100 1M x 40 Bit Dynamic Random A ccess Memory Module for Error Correction Applications T h e M C M 4 0 1 0 0 S and M C M 4 0 L 1 0 0 S a re 40 M , d y n a m ic rand o m a c c e s s m em ory D R A M m o d u les o rg a n ize d a s 1 ,0 4 8 ,5 7 6 x 4 0 bits. T h e m od ule is a 72 -le ad

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MCM54280B MCM5L4280B MCM5V4280B Product Preview 256K x 18 CMOS Dynamic RAM Fast Page Mode - 2 CAS, 1 Write Enable The MCM54280B is a 0.6|i CMOS high-speed dynamic random access memory. It is organized as 262,144 eighteen-bit words and fabricated with CMOS silicon-gate

mb814400

Abstract: MB814400-12 MB814400-80 LCC-26P-NI04 hb81 MB81400 B814400
Contextual Info: FUJITSU June 1990 Edition 1.0 MB814400-80/-10/-12 CMOS 4,194,304 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1,048,576 x 4 Bits Fast Page Mode Dynamic RAM Tha Fujitsu MB814400 is afully decoded CMOS Dynamic RAM DRAM that contains a total of 4,194,304 memory cells accessible in 4-bit increments. The MB814400

A4151

Abstract: A7151 "Frequency To Voltage" 4151 ua7151 voltage to frequency converter "frequency to Voltage Converter" UA4151TC vfc 4151 MA7151 Frequency-To-Voltage Conversion
Contextual Info: /¿ A 4 1 5 1 • /¿ A 7 1 5 1 VOLTAGE-TO-FREQUENCY CONVERTER FAIRCHILD LINEAR INTEGRATED CIRCUITS DESCRIPTION - The /¿A4151 is a monolithic building block used to convert dc voltage to digital pulses. The frequency of the output pulses is proportional to the dc input voltage.

KA5Q0765RT

Abstract: ka5q0765 resh KA5Q0765* an
Contextual Info: KA5Q0765RT S P S S P S TO -22 0F -5L The SPS product family is specially designed for an off-line SMPS with minimal external components. The SPS consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under