Untitled
Abstract: No abstract text available
Text: February 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe
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MB81C1001-70/-80/-10/-12
MB81C1001
LCC-26P-M04)
C260MS-1C
MB81C1001-70
MB81C1001-80
MB81C1001-10
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Untitled
Abstract: No abstract text available
Text: February 1990 Edition 1.0 FUJITSU DATA SHEET MB81C1001-70U-80U-10U-12L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 81C 1001 Is a C M O S , fully decoded dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e M B 81C 1001 has been designed for m ainfram e
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MB81C1001-70U-80U-10U-12L
MB81C1001-70L
MB81C1001-80L
MB61C1001-1
MB81C1001-12L
26-LEAD
LCC-26P-M04)
C26064S-1C
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Untitled
Abstract: No abstract text available
Text: June 1991 Edition 4.0 FUJITSU DATA SHEET M B 8 1 C 1 0 0 1 A - 6 0 /- 7 0 /- 8 0 / - 1 0 CMOS 1M x 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 1,048,576 X 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001AisaCMC>S, fully decoded dynamic RAM organized as 1,048,576 words
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MB81C1001AisaCMC
MB81C1001A
F24020S-3C
MB81C1001A-60
MB81C1001A-70
MB81C1001A-80
MB81C1001A-10
24-LEAD
FPT-24P-M05)
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Untitled
Abstract: No abstract text available
Text: June 1991 Edition 4.0 FUJITSU DATA SHEET MB81C1001A-60/-70/-80/-10 CMOS 1 Mx 1 BIT NIBBLE MODE DYNAMIC RAM CMOS 1,048,576 X 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001A has been designed for mainframe memories, buffer memories, and
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MB81C1001A-60/-70/-80/-10
MB81C1001A
and67
MB81C1001A-60
MB81C1001A-70
MB81C1001A-80
MB81C1001A-10
24-LEAD
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e33i
Abstract: IC1001
Text: November 1990 Edition 2.0 FUJITSU DATA SHEET MB81C1001A-70L/-80L/-WL CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001A has been designed lor mainframe
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MB81C1001A-70L/-80L/-WL
B81C1001A
MB81C1001A
24-LEAD
FPT-24P-M04)
F24020S-2C
MB81C1001A-70L
MB81C1001A-80L
MB81C1001A-10L
e33i
IC1001
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NP-60 battery
Abstract: MB81C1001 cl-001 20 led VU meter
Text: FUJITSU February 1990 Edition 1.0 DATA SHEET MB81C1001-70U-80U-10U-12L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 81C 1001 is a C M O S , fully decoded dynam ic R A M organized as 1 ,0 4 8 ,5 7 6 w ords x 1 bit. T h e M B 81C 1001 has been designed tor m ainfram e
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MB81C1001-70U-80U-10U-12L
MB81C1001
26-lead
C1989
C26064S-1C
MB81C1001-70L
MB81C1001-80L
MB81C1001-10L
NP-60 battery
cl-001
20 led VU meter
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h7cs
Abstract: No abstract text available
Text: June 1991 Edition 3.0 FUJITSU DATA SHEET M B 8 1 C 1 0 0 1 A - 70U -80U -W L CMOS 1Mx 1 BIT NIBBLE MODE LOW POWER DRAM CMOS 1,048,576 X 1 Bit Nibble Mode Low Power DRAM The Fujitsu MB81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words
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MB81C1001A
MB81C1001A-70L
MB81C1001A-80L
MB81C1001A-10L
24-LEAD
FPT-24P-M05)
F24021S-3C
000SE45
h7cs
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81c1001
Abstract: aa743 M04I
Text: October 1989 Edition 3.0 _ — FUJITSU . D A T A S H E E T MB81C1001 - 70/ - 80/ - 10/-12 CMOS 1048576 BIT NIBBLE DYNAMIC RAM CMOS 1,048,576 x 1 BIT NIBBLE MODE DYNAMIC RAM T h e Fujitsu M B 8 1 C 1 0 0 1 is C M O S fu lly decoded dynam ic R A M organized as
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MB81C1001
20002S
MB81C1001-70
MB81C1001-80
MB81C1001-12
18014S
81c1001
aa743
M04I
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916J
Abstract: No abstract text available
Text: June 1991 Edition 3.0 FUJITSU DATA SHEET M B 8 1 C 1 0 0 1 A - 70L/-80L/-10L CMOS 1M x 1 BIT NIBBLE MODE LOW POWER DRAM CMOS 1,048,576 X 1 Bit Nibble Mode Low Power DRAM The Fujitsu MB81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words
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70L/-80L/-10L
MB81C1001A
JV0056-916J3
916J
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Untitled
Abstract: No abstract text available
Text: November 1990 Edition 3.0 FUJITSU DATA SHEET M B 8 1 C 1 1 A - 6 / - 7 / - 8 / - 1 o CMOS 1,048,576 B IT NIBBLE M O DE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001A has been designed tor mainframe
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MB81C1001A
F24020S-2C
MB81C1001
MB81C1001A-10
24-LEAD
FPT-24P-M05)
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MB81C1001-12
Abstract: MB81C1001-10 81C100 81c1001 MB81C1001 MB81C1001-70 MB81C1001-80 EI96
Text: February 1990 Edition 3.0 FUJITSU MB81C100 1 -70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe
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MB81C1001-70/-80/-W/-12
MB81C1001
26-lead
ei969
C260HS-1C
MB81C1001-70
MB81C1001-80
MB81C1001-12
MB81C1001-10
81C100
81c1001
EI96
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MB8101
Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
Text: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe
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MB81C1001-70/-80/-10/-12
MB81C1001
C26064S-1C
MB81C1001-70
MB81C1001-80
MB81C1001-10
MB81C1001-12
20-LEAD
MB8101
RBS 2106 equivalent
RBS 2107
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Untitled
Abstract: No abstract text available
Text: M ay 1990 FUJITSU IPRODUCT PROFILE: MB85231-80/-10/-12 CMOS 1M x 8 NIBBLE MODE DRAM MODULE T he Fujitsu MB85231 is a fully decoded, C M OS dynam ic random access m em ory D R AM m odule consisting o f eight MB81C1001 devices. The MB85231 is optim ized fo r tho se applications requiring high speed, high pe rform ance and
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MB85231-80/-10/-12
MB85231
MB81C1001
MB85231
B81C1001
30-pad
3080m
B85231-80)
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Untitled
Abstract: No abstract text available
Text: November 1990 Edition 3.0 FUJITSU DATA SHEET : MB81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu M B81C 1001A is a CM OS, fully decoded dynam ic RAM organized as 1,048,576 w ords x 1 bit. The M B81C 1001A has been designed fo r mainfram e
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MB81C1001A-60/-70/-80/-10
MB81C1001A
DIP-18P-M04
MB81C1A-80
MB81C1001A-10
24-LEAD
FPT-24P-M04)
F24020S-2C
MB81C1001A-60
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cm c013
Abstract: LT 1910 mb8l ZIP-20P-M02
Text: FUJITSU November 1990 Edition 2.0 MB81C1001A-70U-80U-10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e F u jitsu M B 8 1 C 1 0 0 1 A is a C M O S , fu lly d e c o d e d d y n a m ic R A M o rg a n iz e d a s 1,0 4 8 ,5 7 6 w o rd s x 1 bit. T h e M B 8 1 C 1 0 0 1 A h a s b e e n d e s ig n e d fo r m a in fra m e
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MB81C1Ã
1A-70U-80U-10L
MB81C1001A
U881C1001A
MB81C1001A-70
MB81C1001A-80L
cm c013
LT 1910
mb8l
ZIP-20P-M02
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S 576 B
Abstract: No abstract text available
Text: October 1989 Edition 1.0 FUJITSU DATA SHEET MB81C1001A-60/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM C M O S 1,048,576 X 1 Bit Nibble Mode Dynamic RAM The Fujitsu M B 61C 1001A is C M O S fully decoded dynamic R A M organizedas 1,046,576 words x 1 bit.
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MB81C1001A-60/-80/-10
Cl001Ahasbeendesignedfbrmainframememories
MB81C1001A
S 576 B
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Untitled
Abstract: No abstract text available
Text: FUJITSU November 1990 Edition 2.0 DATA SHEET M B 8 1 C 1 0 0 1 A - 70U-80U ‘ 10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CM OS 1M x 1 B it Nibble Mode DRAM The Fujitsu M B81C1001A is a CM O S, fully decoded dynam ic RAM organized as 1,048,576 words x 1 bit. The M B81C1001A has been designed for mainframe
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70U-80U
B81C1001A
DIP-18P-M04
MBS1C100C1001A-10L
24-LEAD
FPT-24P-M04)
F24020S-2C
MB81C1001A-70L
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cl-001
Abstract: MB81C1001 MB81C1001A-60 mb8l mb81c1001a
Text: FUJITSU November 1990 Edition 3.0 M B81C1001A-60/-70/-80/-10 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e Fujitsu M B 8 1 C 1 0 0 1 A is a C M O S , fully decoded dynam ic R A M organized as 1 0 4 8 ,5 7 6 words x 1 bit. T h e M B 8 1 C 1 0 0 1 A has been d e s i g n e d for m ainfram e
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MB81C10Ã
A-60/-70/-80/-10
MB81C1001A
MBS1C1001A
UB81C1001A
MB81C1001A
B81C1001A-60
cl-001
MB81C1001
MB81C1001A-60
mb8l
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toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Text: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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KM4164
KM41C256
KM41C257
KM41C258
KM41C464
KM41C466
KM41C1000
KM41C1001
KM41C1002
KM44C256
toshiba 32k*8 sram
M5M23C100
M5M5265
seeq DQ2816A
M5M23C400
MB832001
HITACHI 64k DRAM
TC511000
TC51464
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mcm511000
Abstract: a 512 j MN41c1000 MN41C1000SJ-8 MCM511000A-10 MCM511000-85 MCM511000-10 MCM511000-12 MB81C1000-10 HCM511000
Text: - 2041M CMOS X &KÌ08 m t, ít £ CC A TRAC max ns) TRCY min (ns) TCAD D y n a m i c •7 f- > '/ ft TAH TP (ns) (ns) min (ns) RAM ( 10 4 8 5 7 6 x î ) m ft TWCY rain TDH (ns) (ns) TRWC (ns) V D D or V C C (V) 13 P I N m I DD max (mA) À I DD STANDBY ( I SB/ I SB2)
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71-Cyc/ms
H5H4C1000P/J/L-15
H5M4C100Ã
P/J/L-10
M5M4C1001P/J/L-12
MN41C1000L-8
MN41C1000SJ-10
MN41C1000SJ-8
MN41C1002-10
N41C1002-8
mcm511000
a 512 j
MN41c1000
MCM511000A-10
MCM511000-85
MCM511000-10
MCM511000-12
MB81C1000-10
HCM511000
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fujltsu
Abstract: MB81C1000-10 511000 mb81c1000-15 mb81c1003 MB81C1001-15
Text: - 204- 1M CMOS X &KÌ08 m t, ít £ CC A Dynamic '/ ft ft RAM 1 0 4 8 5 7 6 x î ) •7 f- > TRAC max (ns) TRCY min (ns) TCAD TAH (ns) (ns) TP min (ns) TWCY rain (ns) m TDH TRWC V D D or V C C (ns) (ns) (V) 13 P I N 5 1 1 0 0 0 ft À f¡ [*typ] m m I DD
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71-Cyc/ms
H5H4C1000P/J/L-15
H5M4C100Ã
P/J/L-10
M5M4C1001P/J/L-12
MBM81C1000A-80L
MBM81C1001A-10
MBM81C1001A-10L
MBM81C1001A-60
KBM81C1001A-501.
fujltsu
MB81C1000-10
511000
mb81c1000-15
mb81c1003
MB81C1001-15
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Untitled
Abstract: No abstract text available
Text: FU JIT SU MB85231-10 MB85231-12 1M X 8 DRAM MODULE 1,048,576 x 8 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85231 is a fully d e co ded, dynam ic CM OS random a c c e s s m em o ry m odule w ith eight M B81C1001, In 26 -p in SOJ packa ges, and eight .2 2 fiF decoupling
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MB85231-10
MB85231-12
MB85231
B81C1001,
30-pln
MB8S231
MB81C1001
M3D013S-3C
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LCC 18 Pin Package
Abstract: 26PIN 26-PIN MB81C466-10 20-PIN
Text: Section 2 CMOS DRAMs — At a Glance Maximum Acc««« Tlm« n« Capacity Package Option« 262144 bits (262144wx 1b) 16-pin 18-pin Plastic Plastic DIP LCC 262144 bits (65536w x 4b) 18-pin 18-pin 20-pin 18-pin 18-pin 20-pin 26-pin Plastic Ceramic Plastic Plastic
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OCR Scan
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MB81C258-10
MB81C466-10
MB81C1000-70
MB81C1000A-60
MB81C1001-70
MB81C1001A-60
MB81C1002-70
MB81C1002A-60
MB81C4256-70
MB81C4256A-60
LCC 18 Pin Package
26PIN
26-PIN
20-PIN
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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