EW SOT23 Search Results

BA81-01580A

Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st

vf152

Abstract: vf170 NET125 VM MARKING CODE SOT23-5 DD157 VF140-1 VF154 NET127 NET128 DB105
Contextual Info: sig n TSM105 • CONSTANT VOLTAGE AND CONSTANT Part Number Package Temperature Range TSM105CLT TSM105CD Marking L ew ■ ■ ■ ■ ORDER CODE CURRENT CONTROL LOW VOLTAGE OPERATION PRECISION INTERNAL VOLTAGE REFERENCE LOW EXTERNAL COMPONENT COUNT CURRENT SINK OUTPUT STAGE

Contextual Info: DPLS160 LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available (DNLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1)

Contextual Info: DNLS160 LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available (DPLS160) Surface Mount Package Suited for Automated Assembly Lead Free/RoHS Compliant (Note 1)

Contextual Info: AP2337 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH Description Pin Assignments N EW PRODU CT The AP2337 is single channel current-limited integrated highside power switches optimized for hot-swap applications. The devices have fast short-circuit response time for improved

Contextual Info: DNLS320A LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary PNP Type Available (DPLS320A) Lead Free By Design/RoHS Compliant (Note 1)

DDTB123YC

Contextual Info: DDTB xxxx C PNP PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTD) Built-In Biasing Resistors, R1, R2 Lead, Halogen and Antimony Free, RoHS Compliant

Contextual Info: D5V0L1B2LP N EW PRODU CT LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance

Contextual Info: DSS4240T 40V LOW VCE sat NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • N EW PRODU CT Ideal for Medium Power Amplification and Switching Ultra Low Collector-Emitter Saturation Voltage Complimentary NPN Type Available (DSS5240T)

Contextual Info: DPLS320A LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary NPN Type Available (DNLS320A) Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: ZXRE250/ZXRE252 VERY LOW CATHODE CURRENT ADJUSTABLE PRECISION SHUNT REGULATOR Description Pin Assignments ZXRE250 N EW PRODU CT The ZXRE250 and ZXRE252 are three terminal adjustable shunt regulators offering excellent temperature stability and output current handling capability up to 100mA. The output

Contextual Info: 2DC2412R NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Lead Free By Design/RoHS Compliant Note 1 “Green” Device (Note 2) Mechanical Data

Contextual Info: DDTC R2-ONLY SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R2 only Lead, Halogen and Antimony Free, RoHS

6pin vhz

Abstract: 1038 GE EIAJ-SC74
Contextual Info: ▼yTelCom T P A R T 1 , 1 N ew Product D ata Sheets Semiconductor, inc. _ TC1037/1038/1039 Linear Building Block - Single Comparators in SOT Packages FEATURES GENERAL DESCRIPTION • ■ ■ ■ The TC1037/1038/1039 are single, low-power com­

MMBD5004A

Contextual Info: MMBD5004A/C/S HIGH VOLTAGE DUAL SWITCHING DIODE Features Mechanical Data • • • • • • • • N EW PRODU CT Fast Switching Speed: 50ns High Reverse Breakdown Voltage Rating: 400V Low Leakage Current Surface Mount Package Ideally Suited for Automated Insertion

jrw sot

Abstract: marking code JRW MARKING tAN SOT-23 diode P3810 sot-23 marking code sf MARKING tAN SOT-23 ic ma 4810 HSMP-38XX hsms-3860
Contextual Info: What H EW L E T T * mLliM P A C K A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation

1B60

Abstract: AT31011
Contextual Info: Whpïï mitiM H EW LETT PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance: AT-31011:0.9 dB NF, 13 dB GA

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

Contextual Info: DMG2302U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

Contextual Info: DSS4320T N EW PRODU CT LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Complimentary PNP Type Available (DSS5320T) Lead Free By Design/RoHS Compliant (Note 1)

Contextual Info: DMG3420U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

AH 503 hall sensor

Abstract: 48v, 20 amp battery charger circuit diagram transistor prc 606 j of AH 503 hall sensor sot-23 P-Channel MOSFET cpci backplane schematic RLF5018T-2R7M1R8 GN16 loua sot 23 LT6011
Contextual Info: u e r n e m m SEPTEMBER 2003 IN TH IS IS S U E . COVER ARTICLE Multiphase Power Conversion fo r Portable and Point-of-Load Boost Applications.1 David Salerno Issue H igh ligh ts. 2 LTC in the N ew s. 2

Contextual Info: W m H EW L E T T rnüCM PA CK A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-31011 AT-31033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

Contextual Info: DMN2075U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)