EXCELICS SEMICONDUCTOR Search Results

E024A

Abstract: E018A E240D E240B E960B E040A WIRES bonding E025A E1200A
Contextual Info: Excelics Semiconductor, Inc. Recommended Wire Bonding For Excelics FETs E018A E024A Drain Bonding Wire Grounded Source Bonding Wires Gate Bonding Wire E025A E030C Drain Bonding Wire Drain Bonding Wires Grounded Source Grounded Source Bonding Wires Bonding Wires

EPA080A-100P

Abstract: EPA060B-70 EPA240BV EPA018A EIC7179-4 Microwave GaAs FET catalogue EMP108-P1 EPA160AV EPA120EV EPA480C
Contextual Info: Summer 2009 1 Excelics SEMICONDUCTOR Excelics Semiconductor, Inc. is an integrated device manufacturing company founded in March 1995. Corporate headquarters and manufacturing are located in Silicon Valley, approximately 50 miles south of San Francisco, California.

EPA025A70

Abstract: EPA060B-70 EFA018A EPA060B EPA025 EPA025A EPB018A5 EPA018A EPA080A-70 EPA080A
Contextual Info: EXCELICS SEMICONDUCTOR, INC. RTC/10/01/98 Typical Noise Figure/Associated Gain For Excelics FETs Device Type Bias Condition Frequency N.F. Typical Ga (Typical) A.) Power FETs EPA080A 6V/25% Idss 12GHz 1.20dB 9.5dB EPA060B 6V/25% Idss 12GHz 1.15dB 10.0dB

b1415

Abstract: GAAS FET CROSS REFERENCE gaas fet 70 mil micro-X Package power fet 70 mil micro-X Package EPA240BV N5 micro-X Package EPA060B-70 MIXER EMA 0.5w ,GaAs FET EPA480C-SOT89
Contextual Info: RTC/5/01/PSINTRO EXCELICS SEMICONDUCTOR, INC. PRODUCT SELECTION GUIDE Products Excelics Semiconductor, Inc. was founded in 1995 to become a world wide leading merchant supplier of high performance R.F. and microwave semiconductor discrete devices and integrated circuits ICs

EPB018A5-70

Abstract: EPB018A7-70 8664 EPB025A EPB018A7 EPB018A9 EPB018A9-70 EPB025A-70 EPB018A5 1580
Contextual Info: Excelics Semiconductor, Inc. FETPL6, 9/99 EXCELICS PRODUCT LIST-I Super Low Noise High Gain Heterojunction FETs DEVICE TYPE SIZE um2 CHIP SIZE W(Gate)/Finger um2 um Bias N.F.* Ga* dB dB Freq. GHz Idss mA Bvgd* Freq. Range V Remark A.) Chips: EPB018A5 0.3x180

Si3N4

Contextual Info: EXCELICS SEMICONDUCTOR, INC. ADVANTAGES OF EXCELICS POWER FETS • High P-1: Typical Past-P-1<0.7dBm. • High Gain, High ft fmax and High PAE. • High IP3: Typical 13dB above P-1 for GaAs FETs & 8dB above P-1 for Hetero-junction FETs. • Excellent Noise Figures, Particularly at Low Frequency.

Excelics Semiconductor

Abstract: wrist
Contextual Info: Excelics Semiconductor, Inc. DISTRIBUTION: CEO Marketing & Sales Human Resources Engineering Services Approvals Design & Test Engineering Fabrication Assembly & Test Purchasing Quality Assurance Document Control Shipping & Receiving ALL REV DESCRIPTION 01

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

Contextual Info: Excelics Semiconductor, Inc. Approvals Rev Date Description Website Publish Date: Date: Date: Date: Date: Date: A1 06/27/07 940-103556-01-A1.doc Electronic File ID Eng Mgr: Res Eng: Date: Preliminary DATA SHEET, RFMA1720-0.5W-Q7 DOCUMENT NUMBER: 1SNR6 CAGE CODE

EPA090A

Contextual Info: Excelics EPA090A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +28.0dBm TYPICAL OUTPUT POWER 10.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 900 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA1200A

Contextual Info: Excelics EPA1200A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +39.5dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 12,000 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

CP083

Contextual Info: EXCELICS SEMICONDUCTOR, INC. Packaged FET Equivalent Circuit Model Shown below is an approximate model for use with packaged FETs. The FET shown in the schematic can be replaced with the small signal or large signal model for the chip, including bond wire inductances. The element values shown

EPA680A

Contextual Info: Excelics EPA680A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +37.0dBm TYPICAL OUTPUT POWER 7.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 6800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

Contextual Info: Excelics Semiconductor, Inc. Approvals Rev Date Description Website Publish Date: Date: Date: Date: Date: Date: A1 02/10/05 DATA SHEET, EIC3439-8 940-102759-01-A1.doc Electronic File ID Eng Mgr: Res Eng: Date: PRELIMINARY DOCUMENT NUMBER: 1SNR6 CAGE CODE 940-102759-01-A1

EPA480C

Abstract: 408 7443 Excelics Semiconductor
Contextual Info: Excelics EPA480C DATA SHEET High Efficiency Heterojunction Power FET 680 • • • • • • +36.0dBm TYPICAL OUTPUT POWER 19.0dB TYPICAL POWER GAIN AT 2GHz 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA080A

Contextual Info: Excelics EPA080A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 510 +27.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA680A-180F

Contextual Info: Excelics EPA680A-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +37.5dBm TYPICAL OUTPUT POWER 17.5dB TYPICAL POWER GAIN AT 2GHz 0.4 X 6800 MICRON RECESSED “MUSHROOM” GATE

EPB025A

Contextual Info: Excelics EPB025A DATA SHEET Low Noise High Gain Heterojunction FET • • • • • 420 TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES

VP 4932

Abstract: EPA480C-180F
Contextual Info: Excelics EPA480C-180F PRELIMINARY DATA SHEET High Efficiency Heterojunction Power FET • • • • • • NON-HERMETIC 180MIL METAL FLANGE PACKAGE +36.0dBm TYPICAL OUTPUT POWER 18.0dB TYPICAL POWER GAIN AT 2GHz 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE

s-parameter s11 s12 s21

Abstract: EPA040A S21-Magnitude GHz-210 Bias "One Year Repeatability"
Contextual Info: EXCELICS SEMICONDUCTOR, INC. S-Parameter Uniformity Data was measured on EPA040A devices, from 1 to 26GHz. Devices were assembled in a microstrip test fixture. S-parameters include bond wires. Devices were biased at 8V, half Idss. Consequently this data includes not only variations in device characteristics, but also variations

EPA160B

Contextual Info: Excelics EPA160B DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA030C

Contextual Info: Excelics EPA030C DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +23.0dBm TYPICAL OUTPUT POWER 11.0dB TYPICAL POWER GAIN AT 18GHz 0.3 X 300 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

eutectic 157

Abstract: EPA120A
Contextual Info: Excelics EPA120A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

EPA160A

Contextual Info: Excelics EPA160A DATA SHEET High Efficiency Heterojunction Power FET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 8.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION