F I403 Search Results

Contextual Info: NTC THERMISTORS F E N W A L D E L E C T R O N IC S NTC / PTC Thermistors DISCS FEATURES 1 PC. board mountable • Low cost FIG. I UNCOATED ■ Rugged design ■Solderable leads 1 Versatile ■Available on tape and reel FIG. 2 EPOXY COATED ■ . 1 inch to .4 inch diameter

TRANSISTOR BC 545 smd

Abstract: IRFN350 irfn44 IRFMG50 IRFN044 IRFN9040
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER llORI REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part Num ber BV q s s Rectifier’s advanced line of power M O S F E T transistors.

402P

Contextual Info: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma

Contextual Info: NTC THERMISTORS F E N W A L D E L E C T R O N IC S I N C O R P O R A T E D DISCS _ FEATURES • PC. board mountable ■ Lo w cost FIG. I U N C O A TED ■ Rugged design ■ Solderable leads ■ Versatile ■ Available on tape and reel FIG. 2 EPOXY COATED

ic LB1403

Abstract: LB1403 IC 4822 LBI403 lb 1423 n k 1413 40314 FRIA
Contextual Info: L B 1 4 0 3 , 1 4 2 3 , 1 4 1 3 1 4 3 3 IJ ' > ' y m& * vu -?m. ac • * — 9% %<n DC *#* n i x * mm / / •51 co LED CJ: 9 A ^ * * i£ a r * S M * f C * ^ r $ 3>. • M 7 '/ 7 ./ / irl^J/iRU T t ' 6 r c i* AC* DC .* *t ^ -< ;M <-i a r « (0 s:- •

mv1401

Abstract: rn550
Contextual Info: MOTOROLA MV1401, MV I403, MV1404, MV1405, SEMICONDUCTOR TECHNICAL DATA H H H H Tuning Diodes H IG H T U N IN G R A T IO V O L T A G E -V A R IA B L E C A P A C IT A N C E D IO D E S SILICON HYPER-ABRUPT TUNING DIODES . . . designed w ith high capacitance and a capacitance change of

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC1741L

Abstract: MC1709CL mc1709cp2 LM101AI delta inverter dac 08N TRANSISTOR C1741 MC1353 MC1539L TRANSISTOR 7808a mc1394
Contextual Info: M a s te r In d e x an d C ro s s -R e fe re n c e G u id e R e lia b ility E n h a n c e m e n t P ro g ra m s S e le c to r G u id e 3 M e m o ry /M ic ro p ro c e s s o r S u p p o rt D riv e rs /R e c e iv e rs C o m m u n ic a tio n In te rfa c e T e le p h o n y

Motorola mc14433

Abstract: MC1503 1403U 1403 Motorola 1503U MCI403 MC1403AU MC1503U MC1403U mc1403bd
Contextual Info: MOTOROLA MC1403,A MC1503 SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE REFERENCE PRECISION LOW VO LT A G E REFERENCE A precision band-gap vo lta g e reference designed fo r critical in stru m e n ta tio n and D/A co n ve rte r app licatio n s. This u n it is designed to w o rk w ith M o to ro la MC1508 and MC3510 D/A c o n ­

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

BTP-128-400

Abstract: blyp22 BTP128 p 181 transoptor CQDP74 BZP683 Bfcp99 UCY74123 BD282 BTP129
Contextual Info: jfifj U N I T P R tS l GEMI E L E M E N T Y P Ö t P R Z E W O D N I K O W E I U K L A D Y S C A L O N E 1 9 7 9 /8 0 KATALOG SKRÖCONY ► • ■■ H U II ■ I S ■ . -. I . . . . . NAUKOWO-PRODUKCYJNE CENTRUM PÖIPRZEWODNIKÖW NAUKOWO-PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW

1403A shift register

Abstract: AM1403APC AM2802DM AM1403AHM AM1402A AM2802DC V11C AM1402ADM AM1402APC AM2802PC
Contextual Info: Am1402A/Am1403A/Am1404A Am2802/Am2803/Am2804 1024-Bit Dynamic Shift Registers Distinctive Characteristics Both m ilitary and commercial grade devices available • Quad 256-bit, dual 512-bit, single 1024-bit • 10 MHz frequency operation guaranteed for A m 2802,

LH202

Abstract: LH293 motorola mca nor gate using TTL transistor I400 I403 LH201 h54 motorola mpa1
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 1800 equivalent gates - 72 internal cells - Up to 80 l/O s H igh-perform ance, low -pow er ECL internal gates - W orst case T pd = 1.2 ns oo cn Large m acrocell library containing over 150 functions

Transformer EI-41

Abstract: EI TRANSFORMER LIST noryl SE1 J PX1700 KA12A120100044U thermal fuse 125 250V 2A E216698 S3 2A 250V
Contextual Info: Part N o: DPA 1201 00-P1-TK -Description: Power Supply C U I INC Date: 8/ 4 / 0 4 Unit: mm page N o; -, of 6 TEST DATA SA M PL E IT E M Primary Exciting C urrent Input 120 V A C , 60 Hz Primary Load C urrent

hitachi transistor fn651

Abstract: fn651 thyristor Q406 C745 TRANSISTOR ST C744 c311c c744 diodes ld 33 c744 A68KSA30X TELEVISION EHT TRANSFORMERS
Contextual Info: PA HITACHI 35TX10B/CZ41 31UX5B/CY45 31CX4B/CY44 27UX5B/C745 27CX4B/C744 27CX3B/C743 SERVICE MANUAL § No. 0039 R/C: ¡A 3 L X U CLU-851GR CLU-692GR CLU-691GR CAUTION: Before servicing this chassis, it is important that the service technician read the "Safety Precautions" and "Product Safety Notices" in this Service Manual.

i403

Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET technology is the key to International Part Number 'D 2 .on 1000V IRFM G 50

schematic diagram of AM1850S

Abstract: HALF ADDER motorola mca ECL IC NAND
Contextual Info: Ami 850 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS 00 Large macrocell library containing over 150 functions - Supported on major CAE workstations - Superset of MCA-1 Advanced oxide isolated bipolar LSI process technology

Contextual Info: PS SERIES 2,54/3.96mm Dttch c« »*•’*Card Edge Connectors ■ORDERING CODE PS42— 44D— 6013— 2 ign number (tor internal use only) No. of poles (No. of leads = No. 2 poles x 2) Terminal type D = Solder dip P an H o . Contact arrangement 4 = Independent contacts on both sides

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8

Contextual Info: 13 12 11 10 9 CIRCUIT SIZE "A1 J 04 06 I I0 p I2 I4 H I6 I8 J3 20 G 22 24 C .512 .118 .472 13.00 3 .0 0 12.00 .6 3 0 .2 3 6 6 .0 0 .5 9 0 15.00 .748 •354 .709 19.00 9 .0 0 18.00 .8 6 6 .472 2 2 .0 0 12.00 .827 21.00 ■984 .5 9 0 2 5 .0 0 15.00 2 4 .0 0

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16