F1210 Search Results

SMF635-F1210

Contextual Info: Request a Quote | Ask an Engineer Image description. Print this Sheet End of image description. Image description. as PDF EndSave of image description. SMF635-F1210 12 GHz to 18 GHz Broadband PAC ISOLATORS & CIRCULATORS Specifications RF Frequency Isolation

SMF635-F1210

Contextual Info: Broadband PAC Isolators & Circulators SMF635-F1210 12 GHz to 18 GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

F1210

Contextual Info: polyfet rf devices F1210 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

Contextual Info: polyfet rf devices F1210 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended

f1210

Contextual Info: Miniature SMT Power Inductor EPI F1210 Series ELECTRONICS INC. V Features of the EPI “F1210” Series of Miniature SMT Power Inductors µSec. • Virtually no limit on V µSec as long as max. RMS Current Limit • and Temperature Rise Limit are not exceeded

Contextual Info: F1210A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.2A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop

Contextual Info: F1210A Surface Mount Glass Passivated Standard Rectifier Reverse Voltage 1000V Forward Current 1.2A Features • • • • • • • • Glass passivated Standard Rectifiers Very low profile - typical height of 1.0 mm Low forward voltage drop

Contextual Info: polyfet rf devices F1210 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base

SMF635-F1210

Abstract: F1210 MICA Microwave
Contextual Info: Broadband PAC Isolators & Circulators SMF635-F1210 12GHz to 18GHz Specifications RF Frequency Isolation Insertion Loss VSWR Peak Power Average Power Package Size Environmental Notes Specifications subject to change without notice Mica Microwave | Manteca, CA | 1-209-825-3977 | www.Mica-MW.com

1206R

Abstract: 1206B103K500N LM339AM l3303s
Contextual Info: International I R Rectifier P D - 6 .0 8 7 IRP6VRMI Turnkey Pentium Pro1power supply specification The new IRP6VRM 1 offers the pow er supply designer a complete turnkey solution for DC/DC converters required to power next-generation microprocessors. A synchronous

Contextual Info: CLASS 2 TRANSFORMER F12-1000-C2 Description: The F12-1000-C2 is a single primary and dual secondary, split bobbin design which operates with an input of 115V. The secondaries are 6.3V @ 1.0A each. They can be used independently up to 300V difference between them or in series for double

signal transformer 4-44-5016

Abstract: pss 3056 4-44-4020 spw-055 transformer 4-44-6024 4-49-8230 4-44-5016 4-44-3012 4-44-3010 4-49-6024
Contextual Info: Cross Reference Chart Competitor Part No. 4-44-5010 4-44-5012 4-44-5016 4-44-5020 4-44-5024 4-44-5028 4-44-5036 4-44-3010 4-44-3012 4-44-3016 4-44-3020 4-44-3024 4-44-3028 4-44-3036 4-44-6010 4-44-6012 4-44-6016 4-44-6020 4-44-6024 4-44-6028 4-44-6036 4-44-7010

MRF255 equivalent

Abstract: motorola mrf Motorola transistors MRF mrf5015 mrf184 MRF151G F2012 DU1230P uf2810p MRF255
Contextual Info: CROSS REFERENCE Click on part No. to retrieve data sheet . 5/22/2005 Motorola POLYFET PHILIPS POLYFET MA/COM PHI POLYFET MRF134 MRF136 MRF137 MRF141 MRF141G PRF134 PRF136 PRF137 SM401 SR401 BLF145 BLF147 BLF175 BLF177 BLF242 MRF148 MRF151 MRF151G SA741 SM341

CIRCUIT DIAGRAM foxconn g31

Abstract: h0068nl R7F7 4431b foxconn circuit diagram 4431bdy foxconn g31 Foxconn MS01 transformer output 6pin foxconn
Contextual Info: W03 Block Diagram PCB LAYER L1: L2: L3: L4: L5: L6: Signal 1 VCC/GND Signal 2 Signal 3 GND Signal 4 Mobile CPU CLK GEN ICS954226 03 T8 04,05 HOST BUS 16,17 Alviso GM 11,12 CRT CONN MAX1999 DB INPUTS OUTPUTS 5V_S5 LVDS 3V_S5 LCD MAX651024 DCBATOUT 5V_AUX 14''WXGA

FS10 TM

Abstract: F28-700 Transistor FS10 f28-200 F10-110 f10360 FS16-400 TRANSFORMER CT 1A TRANSFORMER CT 2A F12-500
Contextual Info: Class B UL Recognized PC Mount: Split Pack UL File E53148 : D e s c r i p t i o n The Triad Split Pack split bobbin transformer is an extremely versatile tool for PC board applications. Split Pack transformers are nonconcentrically wound - with primaries and secondaries side-by-side. Unlike the

Contextual Info: Miniature SMT Power Inductor ELECTRONICS INC. V Features of the EPI “F1210” Series of Miniature SMT Power Inductors µSec. • Virtually no limit on V µSec as long as max. RMS Current Limit • and Temperature Rise Limit are not exceeded • Low loss material ensures operation in high frequency switching •

Contextual Info: 積層ハイロスインダクタ MULTILAYER FERRITE CHIP BEADS BK SERIES OPERATING TEMP. –55V+125C 特長 FEATURES YInternal silver printed layer creates a closed circuit which acts as a magnetic shield minimizing heat generation and crosstalk. YNo need for grounding provides greater circuit design flexibility.

f103600

Abstract: F48-023 F24-045 f28-200 F20-120 TRANSFORMER CT 1A TRANSFORMER CT 2A F12-090 F16-070 F20-055
Contextual Info: POWER TRANSFORMERS PC MOUNT 80032 rev D DESCRIPTION : The TRIAD Split Pack bobbin transformer from Triad is an extremely versatile tool for PC board applications. Split Pack transformers are nonconcentrically wound - with primaries and secondaries side-by-side. Unlike the secondary-on-top-ofprimary designs of standard PC board transformers, the split bobbin winding and low

HLC2020

Abstract: HLD310 TA 685 HL230 FF120-0UG-028P HLD310 3.6 FF120-0UY-028P F120 FF120-0UO-024P FF120-0UO-028P
Contextual Info: T1 3mm Sub-Midget Based LEDs Subminiature Packages 660nm Ultra Red GaAIAs/GaAIAs Part Number 682,685,714,718 FF120-0UR-005P 5V 20 100 7241 FF120-0UR-018P 18V 15 50 6839 FF120-0UR-024P 24V 12 33 6839 FF120-0UR-028P 28V 12 33 682,685,714,718 FF120-0UO-005P

ir941

Abstract: HLC2020 diode 226 16k 718 BN309 BF3126-0UG-006B FF120-0UG-028P SLF467-0CW-130B BF3126-0UG-014B FF120-0UY-005P FFL200-0UO-006B
Contextual Info: Miniature Based LED Lamps LEDTRONICS, INC. THE FUTURE OF LIGHT 23105 Kashiwa Court, Torrance, CA 90505 Phone: 800 579-4875 or (310) 534-1505 Fax: (310) 534-1424 E-mail: webmaster@ledtronics.com Website: www.ledtronics.com Once limited to simple status indicators, Light Emitting Diodes (LEDs) now play prominent

oz711

Abstract: R7F7 bc417 OZ860 tdk ferrite pc95 BC481 BC380 TPA6017 BC339 3AD4
Contextual Info: 5 4 3 2 1 xuanvinhbkt S06/S07 System Block Diagram D D Thermal Mobile CPU ICS954226 03 C1 Stepping 04.05 HOST BUS DDR2 400/533Mhz C Int MIC In Ext MIC In OUTPUTS 5V_S5 13 3V_S5 DCBATOUT LVDS PCI Express 5V_AUX LCD 3D3V_AUX 14 VGA Board NV44M S-Video SYSTEM DC/DC

Contextual Info: PART m NUMBER w * INDEX B ps w ;k : ; ' : s IN # . W •M i ss m PM V UzPBl? C-1X ET2825-031 F-113X 30 B F-226U 30 G F-3115X 30 G F8-48 28 A 27 B C-3X ET2825-032 F-114X 30 B F-228X 31 D F-3116X 30 G F0-56 28 A FD4-1 ? 27 B C-7X ET2825-033 F-115X 30 G

magnetek transformer

Abstract: FS24-250
Contextual Info: MagneTek/Triad Magnetek Triad Low Clearance, Split Bobbin DC Transformers Visit MagneTek/TriadÕs website at www.magnetek.com Flat Packª, Low Profile The Triad Flat Pack power transformer from MagneTek is designed to meet the needs of low clearance PC board and solid state power designs. These units

F-103 Z capacitor

Abstract: LN333 JIS 5102
Contextual Info: 中高耐圧積層セラミックコンデンサ MEDIUM-HIGH VOLTAGE MULTILAYER CERAMIC CAPACITOR code Temp.characteristics operating Temp. range OPERATING TEMP. BJ B K25VJ85C X5R K55VJ85C X7R K55VJ125C 特長 FEATURES Y内部電極にNi金属を使用しておりマイグレーションが発生せず、高信頼