F2248 Search Results
F2248 Price and Stock
Mercury Electronic Ind Co Ltd 3QHTF22-48.000-PD48.0 MHz XO 3.3V 2.5X2.0 MM PD |
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3QHTF22-48.000-PD |
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Mercury Electronic Ind Co Ltd 3QHTF22-48.600-PD48.6 MHz XO 3.3V 2.5X2.0 MM PD |
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3QHTF22-48.600-PD |
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Mercury Electronic Ind Co Ltd 25QHTF22-4.825-OE4.825 MHz XO 2.5V 2.5X2.0 MM OE |
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25QHTF22-4.825-OE |
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Mercury Electronic Ind Co Ltd 25QHTF22-48.900-OE48.9 MHz XO 2.5V 2.5X2.0 MM OE |
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25QHTF22-48.900-OE |
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Mercury Electronic Ind Co Ltd 3QHTF22-48.0012-PD48.0012 MHz XO 3.3V 2.5X2.0MM PD |
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3QHTF22-48.0012-PD |
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F2248 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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F2248 | Polyfet RF Devices | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Original |
F2248 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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F2248Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F2248 F2248 | |
Contextual Info: polyfet rf devices F2248 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base |
Original |
F2248 | |
Contextual Info: p o ly fe t r f d e v ic e s F2248 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1”1 process features gold metal for greatly extended |
OCR Scan |
F2248 1110Avenida 72mDG1 |