FAJ 40 Search Results

Contextual Info: 43G 2271 Q 053b35 3Ô 5 « H A S H a rris S E M I C O N D U C T O R 2N7306D, 2N7306R £ faJ REGISTRATION PENDING Currently Available as FRE460 D, R, H . Radiation Hardened N-Channel Power MOSFETs April 1994 Features Package • 12A, 500V, RDS(on) = 0.410£2

GP2522

Abstract: GP2L20R GP2L20L GP2503 GP2524 NJL5143EL NJL5146EA NJL5147EL NJL5161K NJL5162K
Contextual Info: - 33 6 - « S g ít m g n % à’j î-5 n. ! T „ :-2 5 ’C , X. : \ -7 9 - m : 7', = 25C'i Vr ÎJ.f iir fr faj 'L Vu, I f vmA) !Q ' ¡V ) im A i Y' “Ci - 10k 5 45 25 - 2 0 '7 0 I f Ver. VvF. «t I f le t, II m ax !V ï im A i 1mA) typ (¿¿s1 150

Contextual Info: SK 20 DGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$XY QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$XYL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier

Contextual Info: SK 10 BGD 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter SEMITOP 3 1-phase bridge rectifier +

FAJ 40

Abstract: Diode FAJ Diode FAJ 22 FAJ 42
Contextual Info: SK 10 DGDL 065 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper Q$RS E$ E$YZ QFRS C-L MNO$P 407,- %*8,23.-, -', .6.,+ C- L MN <VU? O$ E$YZL M ; E$0%&P *' L W &- C¥ Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

h569-445

Abstract: H569-445 G1 FAJ 38 ED83127-30 ED83127-30 G-D T-83150-30 848258679 BDFB ED83127 G61A
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 9 September 2009 Secondary DC Power Distribution Bay H569-445 Notice:

FAJ 20 ESD

Abstract: FAJ 20 "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

h569-445

Abstract: H569445 ED83127-30 G-D ED83127-30 H569 T-83150-30 Diode FAJ ED83019-50 schematic symbol circuit breaker panel ED83127
Contextual Info: Secondary DC Power Distribution Bay H569-445 Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 2000 Lucent Technologies Product Manual Select Code 157-005-104 Comcode 108405283 Issue 5 May 2000 Lucent Technologies Secondary DC Power Distribution Bay

FAJ 20 ESD

Abstract: B0412 F B0412 FAJ ESD FAJ 40 2FAJ-M16R
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

K791

Abstract: Diode FAJ package Diode FAJ Diode FAJ 45
Contextual Info: [ • 9 m iELECIIIIIU GaAs INFRARED EMITTING DIODE 1N626S The 1N6265 is a 940nm LED in a wide angle, TO-46 package. SEATING PILANE -Mh t 11 * Good optica! to m echanical alignment ST1331 e 8, INCHES MILUMETERS MOTES MIN. MAX MAX. MIN. .155 3 53 .616 .407 ,533

FAJ 20 ESD

Abstract: "IEC 61000" modem 2FAJ-M16R B0412
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ Applications Lead free as standard RoHS compliant* ESD protection Protects up to eight data lines Low insertion loss ■ ■ ■ Cell Phones PDAs and Notebooks GPS and SMART Cards 2FAJ-M16R – Integrated Passive & Active Device using MLP

TRIAC BTa 18 600 B

Abstract: bta 40 -700a
Contextual Info: 3QE D £ ÿ j S G • S - 7R2R237 0031572 R ■ T H O M S O 'T-2.5-17 N □ [Ig m iC T iiM flO S BTA 40 A S G S-TH0MS0N TRIACS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP FAST-ON CO NNEXIONS Igt SPECIFIED IN FOUR QUADRANTS INSULATING VOLTAGE 2500 V rms UL RECOGNIZED E81734

ED83127-30

Abstract: BDFB ED83127 power distribution frame ED83127 fuse panel lineage 2000 BDFB FUSES KS21320 J85568D-1 blown fuse indicator with alarm h569-429
Contextual Info: Product Manual J85568D-1 Select Code 157-005-101 Comcode 106991391 Issue 5 March 1998 Lucent Technologies Lineage 2000 Eight-Load BDFB Battery Distribution Fuse Bay and Six-Load PDF (Power Distribution Frame) Notice: Every effort was made to ensure that the information in this

h569-445

Abstract: ED83368-30 CC848846287 BDFB H569445 CC109144812 PBM7900 current monitor panel meter PBM7600FRA 1-800-THE-1PWR
Contextual Info: Smart Distribution Monitor – VIM1 Adding Enhancements to BDFB/BDCBB Management The VIM1 Smart Distribution Monitor replaces the digital meters used on Lineage Power Battery Distribution Fuse Bays BDFB and Battery Distribution Circuit Breaker Bays (BDCBB). Traditional

Contextual Info: KODENSHI 2SE CORP S S M S b Q fl D □ D Q Q 1 7 C1 5 • 4 S ' DIMENSIONS Unit: mm SD-101,102,103 l i , * # 7 1 4 .0 *1 4d:0.1 o^04o +toI o D FEATURES T t x- U j_ • a ta s itta u . 1. 2.54 5 ±0.1 S? o Uin o IS The SD-101,102,103 are position sensors for automatic fo­

ci 4502

Abstract: ECT180
Contextual Info: 4A 35V Tjw150V 7¿Zfr n íZ h FSQS04A035 Fully Molded similar to TO-220AC ttfl» Nihon Inter Electronics Corporation Specification. Construction '> 3 * Schottky Barrier Diode Application High Frequency Rectification I I MAXIMUM RATINGS Ta=25cC: Unless otherwise specified

1B06A

Abstract: B1326 2SC3353 2SC3353A LR35 npn vce 900v
Contextual Info: Power T ransistors t.R 3 2 flS 2 0 0 1 b 4 2 4 . 2SC3353, 2SC3353A 335 2SC3353, 2SC3353A Silicon NPN Triple-Diffused Junction Mesa Type Package Dimensions High Breakdown Voltage, High Speed Switching U nit I mm 4.4m ax. • Features • High speed switching

2SA968-2SA968A

Abstract: 2SA968B 2SA968A transistor 2sC2238 2sa968 2sc2238 2SC2238 2SA968 3RE30 PNP 2SA968 transistor 2sa968b
Contextual Info: SILICON PNP E P IT A X IA L TR A N SIS TO R P C T P R O C ESS o mijmtam 1CL3MAJC. O M £ S * * ii4 § ffl O Power A m p lifie r O D riv e r • 1-7 • 2S C 2 2 3 8 ¿ a > - 7 ' U • Can Stag e A p p lic a tio n s . A m p lifie r A p p lic a tio n s . :

IC4427

Abstract: IC4424 Ic1426 IC4425 IC4452 IC4422 MIC4451
Contextual Info: MOSFET Driver Selection Guide MIC4451/4452 1500pF to 62,000pF 12A Peak Output 0.8£2 O utput Im pedance 25ns into 15,000pF 4.5V to 18V Supply Latch-up Protected W ithstands 5V Negative Swing Surface Mount and High Power Package Available - -0 ° - MIC4451

bt33

Abstract: R7970
Contextual Info: 7 D R A W IN G M A D E IN T H I R D A N G LE LO C T H I S - B -RA-W 4-N G - I S - U N P U B L I S H E D C C o p y rig h t RESERVED. 1 9 8 2 ,3 3 A M P PRODUCTS D IS T 39 P R O J E C T IO N MAY R E LE A S E D by A M P BE COVERED FOR In c o rp o ra te d ,

Contextual Info: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V

lineage rectifier tyco NP2500

Abstract: np2500* shelf application note NP2500 rectifier tyco NP2500 circuit diagram TYCO 596A RECTIFIER FAJ ESD tyco np1200 rectifier tyco NP2500 Galaxy protocol TYCO np1500 RECTIFIER
Contextual Info: Galaxy Rack-Mounted Vector Controller J85501M-1 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Product Manual Select Code 167-792-117 Comcode 108993564 Issue 2 January 2008 Rack-Mounted Vector Controller J85501M-1 Notice: The information, specifications, and procedures in this manual are

2SC373

Abstract: transistor 2sc373 2sc372 transistor 2SC372 2SC372 2SC373 2SC372 transistor 2sc373 toshiba 2SA495 2SC37 NPN 2sc372
Contextual Info: 2SC3 2 G 2 / U D > N P N Z t i ^ 5 / ? ;W B h 5 > 5 ;^ P C T S S C SILICON NPN EPITAXIAL TRANSISTOR ( PCT PROCES^^ 2S c 3 3 G O O a f t ! # « yf- INDUSTRIAL APPLICATIONS o H ig h Frequency A m p li fie r A p p lic a t io n s o H igh Speed S w itc h in g A p p lic a t io n s

Contextual Info: M a rc h 1 9 9 8 F A IR C H IL D S E M IC O N D U C T O R tm FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's