FCSI0202M200 Search Results

FLD5F20NP-D30

Abstract: FLD5F20NP-D33 FLD5F20 10 gb laser diode
Contextual Info: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-D FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Available at C Band ITU-T grid wavelengths between 1529.55 - 1563.05nm • Modulation voltage applied only to modulator section

FLD5

Abstract: 10 gb laser diode Fujitsu laser
Contextual Info: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

electroabsorption modulator quantum well

Abstract: 10 gb laser diode 10ghz optical modulator mqw-dfb optical modulator semiconductor PIN photodiode 5ghz PIN photodiode ps
Contextual Info: 1,550nm MQW-DFB Modulator Integrated Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

9.5-10.5GHz

Contextual Info: FLM0910-25F X, Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=44dBm Typ. ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd =30%(Typ.) ・Broad Band: 9.5～10.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

fujitsu flu

Abstract: fujitsu gaas fet L-band
Contextual Info: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE

IM320

Abstract: fujitsu flu fujitsu gaas fet L-band
Contextual Info: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE

FMM5057VF

Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Contextual Info: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage

Contextual Info: FLM1414-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB = 42.0dBm Typ. ・High Gain: G1dB = 6.0dB(Typ.) ・High PAE: ηadd = 26%(Typ.) ・Broad Band: 14.0 ～ 14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package

FMM5056VF

Abstract: 005s11 fujitsu power amplifier GHz power amplifier mmic 154-12
Contextual Info: FMM5056VF 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Low VSWR ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5056VF is a MMIC amplifier that contains a four-stage

FLU10

Abstract: fujitsu flu fujitsu gaas fet L-band pae100
Contextual Info: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE

Contextual Info: FMM5052ZE 0.8-2.7GHz Power Amplifier MMIC FEATURES ・Wide Frequency Band : 0.8 to 2.7GHz ・Medium Power : P1dB=26dBm Typ. @ f=0.8-2.7GHz ・High Linear Gain : GL=19dB(Typ.) @ f=0.8-2.7GHz ・Impedance Matched Zin/Zout=50Ω ・Wide Operating Temperature Range