FD120 Search Results

FD120H06A5B

Abstract: 15ETH06 S1025 20183
Contextual Info: Preliminary Data Sheet PD-20183 rev. A 06/01 FD120H06A5B Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b d C A 40 (1.57) Wafer flat alligned with side b of the die

LTC4098-3.6

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD1200R17KE3-K_B2 IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values $3B2 %&CBB32 '132214DDD 3B2 3&CBB326B4(3

Contextual Info: PD - 20988 FD120W06A5B FRED Die in Wafer Form # # 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

FD120H06A5BT

Abstract: H306
Contextual Info: Preliminary Data Sheet PD-20532 11/00 FD120H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b C d NOTES: A 40 (1.57) Wafer flat alligned with side b of the die

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1200R17HP4-K_B2 IHM-BModulmitChopperKonfiguration IHM-Bmodulewithchopperconfiguration VorläufigeDaten/PreliminaryData VCES = 1700V IC nom = 1200A / ICRM = 2400A TypischeAnwendungen

FD120W06A5B

Abstract: for IR hexfet die 15ETX06 MIL-HDBK-263 S1025 FD120W06A5
Contextual Info: PD - 20988 rev. B FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

FD120T06A5B

Abstract: 15ETL06 MIL-HDBK-263 S1025
Contextual Info: PD - 20987 rev. B FD120T06A5B FRED Die in Wafer Form z z 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: PD - 20988 rev. A FD120W06A5B FRED Die in Wafer Form z z 600V VF = 3.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel, Chip Pack, and Sawn on Film d (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: Technische Information / technical information FD1200R17KE3-K_B2 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values $ %& & $ 3 ' ( 3 ( : & $ ? & / @ ? ( %& & ' &

FD1200R17KE3-K

Abstract: MC76
Contextual Info: Technische Information / technical information FD1200R17KE3-K_B2 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values $ %& & $ 3 ' ( 3 ( : & $ ? & / @ ? ( %& & ' &

FD120H06A5B

Abstract: 15ETH06 FD120H06A5F FD120H06A5R MIL-HDBK-263 S1025
Contextual Info: PD - 20183 rev.D FD120H06A5B FRED Die in Wafer Form z z 600V VF = 2.2 V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

Contextual Info: Bulletin I0515J rev. A 01/03 FD120L03A5. Fred Die in Wafer Form a 0.35 ± 0.01 c 14 ± 0.4 NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (MILS). 2. CONTROLLING DIMENSION (MILS): b d C A 40 (1.57) 3. DIMENSIONS AND TOLERANCES: a = 3.048 ± 0.01 (120 ± 0.4)

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FD1200R17KE3-K Vorläufige Daten / preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values #3B2 $%CBB32 &132214DDD' 3B2 3%CBB326B4'3

Contextual Info: 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FD1200R17KE3-K_B2 初步数据 PreliminaryData IGBT,制动-斩波器/IGBT,Brake-Chopper 最大额定值/MaximumRatedValues 集电极－发射极电压 Collector-emittervoltage Tvj = 25°C

Contextual Info: TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FD1200R17KE3-K_B2 VorläufigeDaten PreliminaryData IGBT,Brems-Chopper/IGBT,Brake-Chopper HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage

30CPU04

Abstract: FD120U04A5B MIL-HDBK-263 S1025 0524J
Contextual Info: I - 0524J rev.A FD120U04A5B FRED Die in Wafer Form z z 400V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

15ETH03

Abstract: FD120H03A5B MIL-HDBK-263 S1025 for IR hexfet die 0522J
Contextual Info: I - 0522J rev. A FD120H03A5B FRED Die in Wafer Form z z 300V VF = 1.25V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage

1c51

Abstract: FD1200R17KE3-K
Contextual Info: Technische Information / technical information FD1200R17KE3-K IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values # $% % # 3 & ' ' 3 ' < % # @ % A @ ' $% % & % ' &

MC76

Abstract: FD1200R17KE3-K
Contextual Info: Technische Information / technical information FD1200R17KE3-K_B2 IGBT-Module IGBT-modules IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values $ %& & $ 3 ' ( 3 ( : & $ ? & / @ ? ( %& & ' &

Contextual Info: PD - 20987 FD120T06A5B FRED Die in Wafer Form # # 600V VF = 1.1 V max. 5" Wafer 100% Tested at Probe ! Available in Tape and Reel, Chip Pack, and Sawn on Film " (upon request) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter

15ETH06

Abstract: S1025 FD120H06A5B semitec
Contextual Info: Preliminary Data Sheet PD-20183 01/01 FD120H06A5BT Fred Die in Wafer Form a 0.35 ± 0.01 0.014 ± 0.0004 c NOTES: 1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). 2. CONTROLLING DIMENSION (INCH): b d C A 40 (1.57) Wafer flat alligned with side b of the die

FS300R12OE4P

Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Contextual Info: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in

Contextual Info: 3 Fiber Outside Plant Products Fiber Optic Closures, Trays and Accessories Fiber Optic Splice Case 2178 Series and Accessories 230 Fiber Optic Splice Closure 2177 Series and Accessories 243 Fiber Optic Dome Splice Closure FD Series 244 SLiC Fiber Aerial Closure and Terminals

1RFD123

Abstract: IRFD 123R fd120 IRFD 120 IRFD 123
Contextual Info: FD120/121/122/123 IRFD 12OR/121R/122R/123R HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features 4 -P IN DIP TOP VIEW • 1.3A and 1.1A, 80V - 100V • rDS on = 0 .3 0 ii and 0 .4 0 fi • Single Pulse Avalanche Energy Rated*