FDD6N25TF Search Results

FDD6N25TF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDD6N25TF		Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF	689.91KB	9
FDD6N25TF		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 250V 4.4A DPAK	Original	PDF		8

FDD6N25TF Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6N25 Abstract: TO252-DPAK FDD6N25TM Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK	PDF
FDD6N25TM Abstract: FDD6N25 FDD6N25TF FDU6N25 Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25	PDF
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDD6N25 FDU6N25	PDF

Catalog Datasheet

Type

Document Tags

PDF

6N25

Abstract: TO252-DPAK FDD6N25TM
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDD6N25 FDU6N25 FDU6N25 FDD6N25TF FDD6N25TM 6N25 TO252-DPAK

PDF

FDD6N25TM

Abstract: FDD6N25 FDD6N25TF FDU6N25
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Original

FDD6N25 FDU6N25 FDD6N25TM FDD6N25TF FDU6N25

PDF

Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Original

FDD6N25 FDU6N25

PDF