FDD6N25TM Search Results

bel 187 transistor

Contextual Info: User's Guide SLVU893 – June 2013 Using the TPS92075 BUCK Converter The TPS92075EVM is a 14-W maximum, 120-VAC non-isolated dimmable LED driver whose form factor intended for A-15, A-19, A-21, A-23, R-20, R-25, R-27, R-30, R-40, PS-25, PS-30, PS-35, BR-30, BR-38,

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

LM3444

Abstract: CRCW1206200KFKEA MOSFET 300V SOT-89 capacitor 10uf 250v mkp SCHEMATIC POWER AUDIO MOSFET SOD-123 a19 FDD6N25TM 30131
Contextual Info: National Semiconductor Application Note 2083 Clinton Jensen December 2, 2010 Introduction input voltage are valid only for the demonstration board as shipped with the schematic below. Please refer to the LM3444 data sheet for detailed information regarding the LM3444 device. The board is currently set up to drive five to thirteen

MF72

Abstract: application note LM3445 lm3445 2061 filter dimmer Triac emc DFLS1200-7 triac dimmer SOD-123 a19 LM3445MM pwm application note jensen series power
Contextual Info: National Semiconductor Application Note 2061 Clinton Jensen August 11, 2010 Introduction istics including EMI/EMC data. The above restrictions for the input voltage are valid only for the demonstration board as shipped with the schematic below. Please refer to the LM3445

6N25

Abstract: TO252-DPAK FDD6N25TM
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

application note LM3445

Abstract: various PWM techniques for triac SOT89 mosfet triac dim cantherm B32921C3104 DIODE A19
Contextual Info: LM3445 Application Note 2061 LM3445 A19 Edison Retrofit Evaluation Board Literature Number: SNVA442B National Semiconductor Application Note 2061 Clinton Jensen August 11, 2010 Introduction istics including EMI/EMC data. The above restrictions for the input voltage are valid only for the demonstration board as

FDD6N25TM

Abstract: FDD6N25 FDD6N25TF FDU6N25
Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 200 V, 4.4 A, 1.1 Ω Features Description • RDS on = 1.1 Ω (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to

220v AC voltage stabilizer schematic diagram

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Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: TM UniFET FDD6N25 / FDU6N25 250V N-Channel MOSFET Features Description • 4.4A, 250V, RDS on = 1.1Ω @VGS = 10 V • Low gate charge ( typical 4.5 nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

LX7309

Abstract: PD70201 pc817 equivalent si4436 PC817 pc817 application note PC817 analog AON7412 opto pc817 B82804A
Contextual Info: LX7309 Advanced Multi-topology Current-Mode Controller Preliminary Datasheet Description Features The LX7309 is a versatile current-mode DC-DC controller for isolated/non-isolated topologies. It features a low-resistance current-sensing scheme for max 200mV drop, using a differential current-sense

FDD6N25TM

Contextual Info: FDD6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1  Features Description • RDS on = 1.1  (Max.) @ VGS = 10 V, ID = 2.2 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to