FET TH 469 Search Results

se 617

Abstract: ALPHA INDUSTRIES
Contextual Info: Outline Drawings SOIC and PLCC Packaging for GaAs MMIC and FET Products -1 2 -2 5 -2 4 -3 2 D im en sio ns are sp e cifie d in in che s and m illim e te r d im e n sio n s are in p a re n the ses u nle ss o th e rw ise noted. 1. T h e p acka ge o utlin e s p ro vide d in th is se ction a re the m o st cu rre nt at the tim e o f pub lica tio n. If you c a n ’t locate a p acka ge o utline p lease co n su lt th e factory.

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

D15N06V

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD15N06V TMOS V Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device T M O S P O W E R FET 15 A M P E R E S 60 V O LTS N-Channel Enhancement-Mode Silicon Gate TM O S V is a n ew te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce area p rod u ct a b o u t o n e -h a lt th a t of sta n d ard M O SFETs. This

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

MO-235

Abstract: PSMN4R0-30YL
Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 01 — 10 September 2008 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

PSMN4R0-30YL

Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

PSMN4R0-30YL

Contextual Info: PSMN4R0-30YL N-channel TrenchMOS logic level FET Rev. 03 — 31 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in

md012a

Abstract: MA03-2 transorb MD001A MA032 MA04-2 ipos korea MA011 MCP18480 MD001
Contextual Info: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting

Contextual Info: M MCP18480 -48V Hot Swap Controller Features Description • Allows safe board removal and insertion from a live backplane • Accurate <1.5% internal voltage reference for fault detection and precision timing • Programmable foldback current limiting • Programmable circuit breaker current limiting

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC SEM 2105

Contextual Info: Fast, Precise 5-Bit Synchronous Buck Controller for the Next Generation Low Voltage Pentium II Processors Features Description The CS5165 synchronous 5-bit NFET buck controller is optim ized to manage the pow er of the next generation Pentium®II processors. It's V2 control

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IRF FET

Abstract: FET MARKING QG MOSFET LOSSES SYNC BUCK fet data book free download 10BQ040 EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503
Contextual Info: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

NE850R5

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NE850R5 SERIES 0.5 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE850R599 pow er GaAs FET covers 2 GHz to 10 GHz frequency range for com m ercial am plifier, oscillator applications and so on. The device incorporates Ti-AI gate and silicon dioxide glassivation. To reduce the therm al resistance, the device

P916A

Abstract: FET marking code FET MARKING QG
Contextual Info: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

K545

Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Contextual Info: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband com mercial and m ilitary applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

10BQ040

Abstract: EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503 RLR8503 fet dpak FET marking code
Contextual Info: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

Contextual Info: FLM5972-8F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 39.0dBm Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 31% (Typ.) • Low IM3 = -45dBc@Po = 28.0dBm • Broad Band: 5.9 ~ 7.2GHz • Impedance Matched Zin/Zout = 50Q

FET MARKING CODE

Abstract: IRF FET 10BQ040 EIA-541 IRFR120 IRLR8103V IRLR8503 FET MARKING QG Junction P FET High Current Low Side Switch
Contextual Info: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description

10BQ040

Abstract: EIA-541 IRFR120 IRLR8103V IRLR8503
Contextual Info: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description

fujitsu gaas fet

Abstract: FLC107WG
Contextual Info: FLC107WG - C-Band Power GaAs FET FEATURES • • • • • High Output Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 36%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package