623SBOS Search Results

BD 130 NPN transistor

Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Contextual Info: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

siemens sab 82532

Abstract: 82258 SA 82532 SAB 80286 csc 2323 sab80286 STT 3 SIEMENS 80286 microprocessor pin out diagram ESCC2 siemens sab 82525
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC2 SAB 82532 Preliminary Data 1.1 CMOS 1C General Features S erial Interface • Two independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

Q67006-A9171

Abstract: hall current sensor 3A 4921-3U AEP01694 TLE4921-3U siemens magnetic sensors Siemens Hall AEA01259 AED01707 AED01709
Contextual Info: SIEM ENS Dynamic Differential Hall Effect Sensor 1C TLE4921-3U Bipolar IC Features • • • • • • • • • • • • • • • Advanced performance High sensitivity Symmetrical thresholds High piezo resistivity Reduced power consumption South and north pole pre-induction possible

BUZ54

Contextual Info: SIEMENS SIPMOS Power Transistors BUZ 54 • N channel • Enhancement mode • Avalanche-rated VOTOSI 52 Type v DS ^DS on Package 1> Ordering Code BUZ 54 1000 V 5.1 A 2.0 £2 TO-204 AA C67078-S1010-A2 BUZ 54 A 1000 V 4.5 A 2.6 Q TO-204 AA C67078-S1010-A3

Contextual Info: SIEMENS TUA 601 OX preliminary IC-SPECIFICATION TV Mixer-Oscillator-PLL for 1.1 GHz page Contents 1 Functional Description, Application 2 3-4 Pin Defintion and Function 5 Block Diagram Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings 12

Contextual Info: SIEMENS 6fach-Silizium-Fotodiodenarray 6-Chip Silicon Photodiode Array KOM 2033 A KOM 2033 AF Maße in mm, w enn nicht anders a ngegeben/D im ensions in mm. unless otherw ise specified W esentliche M erkm ale Features • Speziell geeignet für Anwendungen im

Contextual Info: SIEM EN S SAB-C501 8-Bit C M O S M icroco n tro ller • Fully compatible to standard 8051 microcontroller • Versions for 12/20/40 MHz operating frequency • 8 K x 8 ROM SAB-C501 -1R only • 256 x 8 RAM • Four 8-bit ports • Three 16-bit Timers / Counters (Timer 2

SIEMENS BST h 05 90

Abstract: 51214X SIEMENS BST N 35 SIEMENS BST g 02 60
Contextual Info: SIEMENS Bl Dl Transceiver Optical Module 1300/1300 nm, Medium Power SBM 51214X • • • • • • Designed for application in passive-optical networks Integrated beam splitter Bidirectional Transmission in one optical window Laser diode with Multi-Quantum Well structure

STT 3 SIEMENS 431

Abstract: 80c517 Siemens sab 2793b-p
Contextual Info: bOE D • fl2 3 5 fc iO S G G H 7T23 S IE M E N S SIEMENS 152 « S IE G A K T IE N G E S E L L S C H A F ^ High-Performance 8-Bit CMOS Single-Chip Microcontroller ^ e=r - / 9 - o 7 SAB 80C517/80C537 Advanced Information SAB 80C517 SAB 80C537 Microcontroller with factory mask-programmable ROM

222-1

Abstract: AF2N br 2222 npn 2222 A 2221 N 2222 2N2222 2221A A4075 a2222a
Contextual Info: 2SC D • 023SbQS Q0Q4ÖÖÖ 7 « S I E G NPN Silicon Planar Transistors - -SIEMENS AKTIENGESELLSCH AF. . 2 N 2221 A 2 N 2222 A - 2 N 2221 A, and 2 N 2222 A are epitaxial NPN silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are

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STT 3 SIEMENS

Abstract: BU426A BU426 D-07 Q68000-A5164 Q68000-A5165
Contextual Info: 25C » • ä235bGS 0004047 4 « S I E G !' T- J 3 -/J BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIEN6ESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength

POWER SUPPLY BTS SIEMENS

Abstract: siemens pwm 12v BTS630 E3230 sis 630 application note BTS SMD MARKING code 613
Contextual Info: SIEMENS BTS 630 PWM Power Unit The device allows continuous power control for lamps,LEDs or inductive loads. • Highside switch • Overtemperatur protection • Short circuit / overload protection through pulse widt reduction and overload shutdown • Load dump protection

DDMS770

Abstract: PC1210 SiEMENS EC 350 98 0
Contextual Info: bGE ]> • Ô235b05 00457ti5 T3S M S I E C SIEMENS SIEMENS AKTI ENGESELLSCHAF ■7- 2 3 - Ö SI MOPAC Module VDS / d 7 BSM 294 F = 1000 V = 2 x 18 A R DS on = 0.63 £2 • • • • • • • Power module Half-bridge FREDFET N channel Enhancement mode

K4887-K4

Abstract: B25355-K167-K4 ws dvd 290
Contextual Info: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting

Contextual Info: SIEMENS TUA 6110XS preliminary IC-SPECIFICATION Contents SAT Mixer-Oscillator-PLL for 3.3GHz paf>e Contents 1 Functional Description, Application Pin Defintion and Function Block Diagram 5 Circuit Description 6-10 Pinning, Package 11 Absolute Maximum Ratings

Contextual Info: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version

SMD MARKING CODE E2H

Abstract: SMD MARKING CODE E4H marking code C1H SMD Q67120-C991 SAB-C501-L24N Siemens SAB-C501 siemens sm2 c947 smd marking b4h C501
Contextual Info: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)

NTC 4,7 Siemens

Abstract: HT 1200-4 S041E Q7101-H6615 siemens slic DBM01 qsicos-program S-041 S041 E siemens 58 295 84 pin chip
Contextual Info: S IE M E N S Four Channel Codec Filter SICOFP-4 PEB 2465 Preliminary Data 1.1 CMOS Features or PABX-channels Specification according to rele\ LSSGR recommendations Digital signal processing technique Programmable interface optimizf SLICs and transform er solutions

BRY 300

Abstract: BRY 100 BRY 55 200 BRY 55 A HS 817 VDR Siemens BRy55 siemens thyristors bry65 BRY 21
Contextual Info: 2SC D • flSBSbQS QQQ47bR T ■ S I E 6 r . 1 C3L U t lO T a -fZ _ . 2 o -// Silicon Miniature Thyristors ~ BRY 55/30. - S I E M E N S A K T IE N G E S E L L S C H A F _BRY SS/3_00 These diffused silicon thyristors in TO 92 plastic package 10 A 3 DIN 41868} are

HDSP7301

Abstract: HDSP-7301 7 segment led display SIEMENS Siebensegmentanzeige
Contextual Info: SI EM EN S 4?E m fl23SbD5 0027011 4 «SIEG SIEMENS AKTIENGESELLSCHAF "P-41-33 Sieben-Segment-Anzeige Seven Segment Display 7,6 mm 0.3” HDSP-7301 Besondere Merkmale • Hohe Lichtstärke • Gehäuse ist optimiert fur den Einsatz bei starkem Fremdlicht

Contextual Info: 25C D • S 3-/3 6235bOS 0004047 4 « S I E G !' BU 426 BU 426 A NPN Silicon Power Transistors - SIEMENS AKTIENGESELLSCHAF BU 426 and BU 426 A are triple diffused silicon power switching transistors in SOT 93 case TOP 3 . They are outstanding for short switching times and high dielectric strength

AF239

Abstract: transistor h5c AF 239 0406H F239 Q60106-X239 A23Sb05 WTV4 AAO-4A
Contextual Info: ESC D • ÔEBSbQS QQOMQbb R PNP Germanium RF Transistor ISIEû 25C 04066 0 AF 239 r-3 t- ¿>7 SIEMENS AKTIENGESELLSCHAF - for UHF input stages up to 900 MHz AF 239 is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads are electrically insulated from the case.

Contextual Info: Metallized Polypropylene Film Capacitors MKP in Plastic Case B 32 652 . B 32 656 MKP wound capacitors Very small dimensions Construction -c: • Dielectric: polypropylene • Wound capacitor technology with internal series connection for l/R >1250 Vdc