FLASH 48PIN DQS Search Results

flash 48pin dqs

Contextual Info: M ICRON I QUANTUM Devices, HC. ADVANCE 1 MEG x 16 A D V A N C E D B O O T BL O C K FLASH M E M O R Y MT28F160A3 FLASH MEMORY Sm art 3 FEATURES * * * * * * * * * * PIN A S S I G N M E N T Top View Thirty-nine erase blocks: Two 4K-word boot blocks (protected)

Contextual Info: I FUJITSU SEMICONDUCTOR , ^ ^ . ^ . ^ ^ « ^ , - ^ - ' ^ - ^ « . ^ - ^ DATA SHEET rm nCftK o n u o i P S 0 5 - 2 0 8 2 1 - ,._ FLASH MEMORY CMOS 8 M 1 M x 8 B I T MBM29F080-12-X DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements

MBM29LV200B

Contextual Info: FLASH MEMORY B l I l i 2M 256K x 8/128K x 16 BIT M B M 2 9 L V 2 0 0 T - 12- x / M B M 2 9 L V 2 0 0 B - 12- x

Contextual Info: FLASH MEMORY CMOS • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash

M29F800A3BT12

Abstract: M29F800A3BR10 M29F800A3BR80
Contextual Info: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 8M CMOS Flash Memory The M29F800A3 is a 3.3 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and communication products.

L24002

Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities

Contextual Info: m iiB m m m am m . lliilllllllllllllllllllllllllllllllllllll M B M 2 9 F 0 1 6 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands

sa29 pinout

Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
Contextual Info: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs

sandisk micro sd card pin

Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
Contextual Info: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM

Contextual Info: FLASH MEMORY B l I l i i 8 M 1 M x 8/512 K x 16 BIT MBM29 F800 T-90-X-12-X/MBM29 F 800 B-90-X-12-x • FEATURES

Contextual Info: FLASH MEMORY CMOS 16 M 2 M x 8 BIT MBM29F016 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

Contextual Info: FLASH MEMORY CMOS 8 M 1 M x 8 BIT MBM29F080-12-X • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash

Contextual Info: M B M29 LV8 OOT-12-x/M B M29 LV800B -12 x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts

NS 2N3

Contextual Info: Preliminary W29S201 128K x 16 CMOS FLASH MEMORY WITH SYNCHRONOUS BURST READ GENERAL DESCRIPTION The W29S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The W29S201 supports both assynchronous & high performance synchronous burst read modes. The device

46-PIN 29lv

Abstract: fujtsu
Contextual Info: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: Order this document by M29S160/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 16M CMOS Flash Memory Organization: 1,048,576 words x 16 bits 2,097,152 words x 8 bits Power Supply Voltage: V c c = 2.7 V - 3.6 V 2.5 V - 3.6 V READ Access Time:

Contextual Info: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x

Contextual Info: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Plead Maximum Access Times — 5V: 60/80/120 ns

M29F800A3BT12

Abstract: m29f800a3br 29F800A
Contextual Info: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max

Contextual Info: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

MBM29F800

Contextual Info: MBM29F800T-90-X/-12-X/MBM29F800B-90-X/-12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

Contextual Info: M B M29 LV400T-12-x/M B M29 LV400B-12-x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard com m ands Uses same software commands as E2PROMs • Compatible with JEDEC-standard w orld-w ide pinouts

Contextual Info: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is

W49F201

Contextual Info: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is