FLK057XV Search Results

FLK057XV Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLK057XV		Fujitsu	GaAs FET & HEMT Chip		Original	PDF
FLK057XV-E1		Fujitsu	FET: P Channel: ID 0.3 A		Original	PDF

FLK057XV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FLK057XV Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV FCSI0598M200	PDF
Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV	PDF
fujitsu hemt Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV FCSI0598M200 fujitsu hemt	PDF
GaAs FET HEMT Chips Abstract: FLK057XV Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV GaAs FET HEMT Chips	PDF
Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: ηadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV	PDF
Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-\|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r iadd = 32% (Typ.) Proven Reliability DESCRIPTION The FLK057XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band frequency range as	OCR Scan	FLK057XV FLK057XV FCSI0598M200	PDF
GaAs FET HEMT Chips Contextual Info: FLK057XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 27.0dBm Typ. High Gain: G1dB = 7.0dB(Typ.) High PAE: hadd = 32%(Typ.) Proven Reliability Drain DESCRIPTION Drain Source The FLK057XV chip is a power GaAs FET that is designed for	Original	FLK057XV FLK057XV FCSI0598M200 GaAs FET HEMT Chips	PDF
CD 294 Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-\|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package	OCR Scan	FLC167WF FLC167WF FCSI0598M200 CD 294 FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet	PDF
Filtronic Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500 Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15	Original	FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500	PDF