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    FLK207XV Search Results

    FLK207XV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FLK207XV Fujitsu GaAs FET & HEMT Chip Original PDF
    FLK207XV-E1 Fujitsu FET: P Channel: ID 1.2 A Original PDF

    FLK207XV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GaAs FET HEMT Chips

    Abstract: 876 fujitsu fet general
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: hadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV FCSI0598M200 GaAs FET HEMT Chips 876 fujitsu fet general

    Untitled

    Abstract: No abstract text available
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV

    FLK207XV

    Abstract: GaAs FET HEMT Chips
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV FCSI0598M200 GaAs FET HEMT Chips

    FLK207XV

    Abstract: No abstract text available
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV

    Untitled

    Abstract: No abstract text available
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV

    FLK207XV

    Abstract: GaAs FET chip
    Text: FLK207XV GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 32.5dBm Typ. High Gain: G1dB = 6.0dB(Typ.) High PAE: ηadd = 27%(Typ.) Proven Reliability Drain Drain Drain Drain DESCRIPTION Gate The FLK207XV chip is a power GaAs FET that is


    Original     		PDF FLK207XV FLK207XV GaAs FET chip

    Filtronic

    Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
    Text: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15


    Original     		PDF FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B Filtronic EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500