FLL30 Search Results

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IL-2

Abstract: J1014 FLL300IL-1 FLL300IL-3 fujitsu l-band power fets
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

FLL300IL-2

Abstract: FLL300IL-1 FLL300IL-3 1200 - 1400 MHz L-Band Applications
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

FLL300IP-4

Abstract: 15 GHz power amplifier Output Power 37dBm Fujitsu GaAs FET Amplifier fujitsu gaas fet L-band
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IL-3

Abstract: FLL300IL-2 FLL300IL-1 FLL30 J10-14
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: hadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

fujitsu l-band power fets

Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) High PAE: ηadd = 44% (Typ.) Proven Reliability Hermetically Sealed Package

FLL300IP-4

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IL-3

Abstract: FLL300IL-1 FLL300IL-2
Contextual Info: FLL300IL-1, FLL300IL-2, FLL300IL-3 L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • High Gain: G 1dB = 12.0dB (Typ.)@1,8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability • Hermetically Sealed Package

fll300ip-2

Abstract: fll300ip C 937
Contextual Info: FLL300IP-3 L-Band Mediui\i & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Parameter Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 93.7 w °c °c Total Power Disspation Tc = 25°C Pt

FLL300IL-1

Abstract: microwave databook
Contextual Info: F,ifm-i • FLL300IL-1, FLL300IL-2, FLL300IL-3 I 1jU L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P-idg = 44.5dBm Typ. • High Gain: G -j^B = 12.0dB (Typ.)@1.8GHz (FLL300IL-2) • High PAE: r iadd = 44% (Typ.) • Proven Reliability

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

S-20

Abstract: R8240 UK 2,5 N JC JB jt
Contextual Info: • S IL IC O N F A S T R E C O V E R Y R E C T IF Y IN G D IO D E S 5ÖE » OR IG IN E L E C T R I C CO LTD > #* — 2 . • trr^0.8tis fc,fll30?4 DD O Q O M a OflO I. 2 . A— • 20A -7 4 > f t FR S-20-r :/Jî H 5] -y ^ FEATURES 1. Low noise, soft recovery type.

fll300ip

Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL300IP-4

Abstract: FLL30
Contextual Info: FLL300IP-4 FEATURES • • • • Push-Pull Configuration High PAE: 40% Typ. Broad Frequency Range: 3400 to 3600 MHz. Suitable for class A operation. DESCRIPTION The FLL300IP-4 is a 30 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high

FLL105

Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Contextual Info: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ

FLL55

Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Contextual Info: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.

CD 294

Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Contextual Info: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package

FLC301XP

Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips

ORIGIN ELECTRIC

Abstract: MD20SH05K MD36SH05K MD50SH05K MDA65SN1K
Contextual Info: SILICON HIGH VOLTAGE RECTIFYING DIODES MD r jSH05K, MDA65SN1K O R I G I N E L E C T R I C CO LTD •¡ttS • S 3 E T> I • PB#JIffi>SA<lk V £ # 'S C * # l. 2 . W l E A ' * * ^ '0 MAX65kV sa f#4SS>arp|i æ >1-* 3 » Electrical Absolute maximum ratings

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.

FMC141401-02

Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of