FLM5964 Search Results
FLM5964 Price and Stock
SUMITOMO ELECTRIC Device Innovations Inc FLM596418FElectronic Component |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FLM596418F | 9 |
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Get Quote | |||||||
FLM5964 Datasheets (19)
| Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM5964-12D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-12F |
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C-Band Internally Matched FET | Original | 97.23KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-14/D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-18F |
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C-Band Internally Matched FET | Original | 97.03KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-25D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-25F |
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C-Band Internally Matched FET | Original | 97.68KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-35F |
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MOSFET, C-Band Internally Matched FET | Original | 287.49KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-45F | Unknown | C-Band Internally Matched FET | Original | 286.7KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-4C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-4C/D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-4D | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-4F | Unknown | C-Band Internally Matched FET | Original | 254.3KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-6D | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-6D | Unknown | FET Data Book | Scan | 102.65KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| FLM5964-6F | Eudyna Devices | FET Misc, C-Band Internally Matched FET | Original | 254.22KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-8C | Unknown | High Frequency Device Data Book (Japanese) | Scan | 51.62KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-8C/D | Unknown | FET Data Book | Scan | 102.64KB | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-8D | Unknown | High Frequency Device Data Book (Japanese) | Scan | 59.99KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FLM5964-8F | Unknown | C-Band Internally Matched FET | Original | 253.6KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FLM5964 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-4F -46dBc 5964-4F FCSI0598M200 | |
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Contextual Info: FLM5964-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 10.0dB (Typ.) • High PAE: riadd = 37% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-12F -46dBc FCSI0598M200 | |
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Contextual Info: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz |
OCR Scan |
FLM5964-18DA -45dBc 5964-18D Drain-40 | |
5964-6DContextual Info: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz |
OCR Scan |
FLM5964-6D -45dBc 27dBm 5964-6D | |
FLM5964Contextual Info: n FLM5964-8D Internally Matched Power GaAs F E Ts . I FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Low IM 3 = -45dBc@Po = 28dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-8D -45dBc 28dBm FLM5964-8D FLM5964 | |
FLM5964-18DA
Abstract: 5964-18DA 5964-18D
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OCR Scan |
FLM5964-18DA -45dBc 5964-18D FLM5964-18DA 5964-18DA | |
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Contextual Info: FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm Typ. • High Gain: G1dB=8.5dB(Typ.) • High PAE: hadd=39%(Typ.) • Broad Band: 5.9 to 6.4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION |
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FLM5964-45F 50ohm FLM5964-45F 50ohm 25deg | |
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Contextual Info: FLM5964-8F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=39.5dBm Typ. • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=35%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package |
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FLM5964-8F/001 75GHz 50ohm FLM5964-8F/001 50ohm 25deg | |
cd 1691 cp
Abstract: Y3015
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OCR Scan |
FLM5964-12DA -45dBc 30dBm FLM5964-12DA 3100mA cd 1691 cp Y3015 | |
8002 1037Contextual Info: FLM5964-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W |
Original |
FLM5964-25F -46dBc FLM5964-25F FCSI0598M200 8002 1037 | |
FLM5964-12FContextual Info: FLM5964-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 41.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω |
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FLM5964-12F -46dBc FLM5964-12F | |
FLM5964-25FContextual Info: FLM5964-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω |
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FLM5964-25F -46dBc FLM5964-25F | |
ik 937
Abstract: FLM5964-18F
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FLM5964-18F -46dBc FLM5964-18F ik 937 | |
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Contextual Info: FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm Typ. • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package |
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FLM5964-12F/001 75GHz 50ohm FLM5964-12F/001 50ohm 25deg -250uA 65Idss 10MHz | |
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gm 88
Abstract: f1640 ED-4701 FLM5964-35F
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FLM5964-35F FLM5964-35F gm 88 f1640 ED-4701 | |
FLM5964-6FContextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω |
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FLM5964-6F -46dBc FLM5964-6F | |
FLM5964-12DAContextual Info: F, , FLM5964-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-12DA 41dBm -45dBc 30dBm FLM5964-12DA | |
EIAJ ED-4701
Abstract: EUDYNA C-Band Eudyna Devices ED-4701 FLM5964-35F
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FLM5964-35F FLM5964-35F EIAJ ED-4701 EUDYNA C-Band Eudyna Devices ED-4701 | |
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Contextual Info: FLM5964-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 38.5dBm Typ. High Gain: G1dB = 10.0dB (Typ.) High PAE: hadd = 37% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50W |
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FLM5964-6F -46dBc FLM5964-6F FCSI0598M200 | |
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Contextual Info: F, , FLM5964-4D J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 36dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 31% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-4D 36dBm -45dBc 25dBm FLM5359-4D | |
FLM5964-8CContextual Info: F|.fjU-,. FLM5964-8C I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39.0dBm Typ. • High Gain: G -j^B = 8.0dB (Typ.) • High PAE: r iadd = 30% (Typ.) • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed Package |
OCR Scan |
FLM5964-8C FLM5964-8C | |
FLM5964-4cContextual Info: p. .fjW-,. FLM5964-4C Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 36dBm Typ.) • • • • • High Gain: G-j^B = 9.0dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package |
OCR Scan |
FLM5964-4C 36dBm FLM5359-4C 1100mA FLM5964-4c | |
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Contextual Info: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-8C 5964-8C | |
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Contextual Info: FLM5964-25DA r UJ11bU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r iadd = 33% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q |
OCR Scan |
FLM5964-25DA UJ11bU 44dBm -45dBc 32dBm 5964-25D | |