FMMV2106 Search Results

Contextual Info: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS

zener diode marking E7

Abstract: 5V6 DIODE FMMV2107 zener diode E7 Zener Diode LF marking DIODE ZENER DUAL 16 FMMD6100 FMMV2102 FMMD2837 FMMV2104
Contextual Info: SOT-23 TRANSISTORS & DIODES SILICO N ABRIJPT TUNER D O DES Type FMMV2101 FMMV2102 FMMV2103 FMMV2104 FMMV2105 FMMV2106 FM M V2107 FMMV2108 FMMV2109 Reverse breakdown Voltage V R Volts max. 30 30 30 30 30 30 30 30 30 Nominal capacitance at V R= 2V, f =1MHz ^•tot PF

2N3819 spice model

Abstract: varactor APPLICATION construction of varactor diode 1GHz vco bfr90 equivalent 0-30v variable power supply BBY40 spice 2N3819 Application Note 2N3819 equivalent transistor 2N3819
Contextual Info: Application Note 9 Issue 2 January 1996 Zetex Variable Capacitance Diodes Neil Chadderton Introduction The advent of varactor diodes has made a huge impact in many areas of electronic design, which is only too evident in todays consumer products. Formerly, where bulky or unreliable

ZC830B

Abstract: zc840 ZC830 ZC830A ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Contextual Info: SOT23 #• HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at V r = 2 V , f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in Typ pF Max pF Min Max Typ pF 25 9.0

ZC930

Contextual Info: SOT23 HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode Nom inal Capacitance at VR=2V, f=1MHz Ctot Reverse Breakdown Voltage Type Vr V Min pF Typ pF Capacitance Ratio at f=1MHz C2/C20 Max pF Q at V r =3V f=50MHz Min Max Typ Device Code ZC830A 25 9.0 10.0

zc840

Abstract: ZC830 ZC830A ZC830B ZC831A ZC832A ZC833A ZC834A ZC835A ZC836A
Contextual Info: SOT23 'f r HYPERABRUPT TUNER DIODES Pinout : 1-Cathode, 3-Anode N om inal Capacitance at Vr=2V, f=1MHz Reverse Breakdown Voltage Type Capacitance Ratio at f=1MHz C2/C2o Ctot Q at V r =3V f=50MHz Device Code VR V M in pF Typ pF Max pF Min Max Typ ZC830A 25

6H MARKING

Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
Contextual Info: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications under pulsed conditions include ultra high speed switching, clamping, sampling gates and pulse shaping.