FS10KM10 Search Results

FS10KM-10

Abstract: 710a
Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 O UTLINE DRAW ING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 « r Vd s s . 500V rDS ON (MAX) .0.90Í2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

FS10KM-10A

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

090Q

Abstract: FS10KM10 MOSFET IGSS 100nA VDS 20V
Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KM-10 I ; HIGH-SPEED SWITCHING USE FS10KM-10 • VDSS . •5 0 0 V • TDS ON (MAX) 0.90Q • Id . 10A • V iso . 2 000V APPLICATION SMPS, DC-DC Converter, battery charger, power

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

FS14SM12

Abstract: FS18SM10 fs18sm-10 POWEREX mosfet fs series FS5VS-10
Contextual Info: mumsx ShOft FOTITi Ddtd Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Medium Voltage (continued) FS Series MOSFETs (450 ~ 600V) Maximum Ratings, Tc = 25°C Device VDss b PD V GSS Number

FS10KM

Abstract: FS10KM-10A 200v 10A mosfet
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FS10KM-10A FS10KM-10A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FS10KM-10A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3

fs18rm10

Abstract: FS18RM-10 FS2KM-12 FS14SM12 FS7KM12 FS10km-12 FS18RM TO-220FN FS10KM-10 T70 N03
Contextual Info: M M B IE X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O f t F O T IT l D a t a Selector Guide Discrete MOSFET - Medium Voltage (continued) FS Series MOSFETs (450 ~ 600V) Maximum Ratings, Tc = 25°C Electrical Characteristics

FS10KM-10

Contextual Info: MITSUBISHI Nch POWER MOSFET FS10KM-10 HIGH-SPEED SWITCHING USE FS10KM-10 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 500V

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

H7N1009MD

Abstract: HAT2153RJ TRANSISTOR FS10KM HAT2180RP DIODE H5N H7P1006MD immobilizer antenna CR3AS-12 HAT1081R cr3as
Contextual Info: Power-Device Renesas Power MOS FETs, IGBTs, Triacs, and Thyristors Products April, 2004 Standard Product Business Group Discrete and Standerd IC Business Unit Renesas Technology Corp. Power-Device Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog