FSL913 Search Results

Rad Hard in Fairchild for MOSFET

Contextual Info: FSL913A0D, FSL913A0R Data Sheet 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

VDMOS reliability testing report

Abstract: Rad Hard in Fairchild for MOSFET
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, ros ON = 0.680£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL913AOD, FSL913AOR 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 7A, -100V, ros ON = 0-300Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s

2E12

Abstract: FSL913A0R4 JANSR2N7438 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7438 Data Sheet Title ANS N74 bt orrly aile L91 0R4 adion rded, GR sist, Chanwer OSTs utho eyrds terrpoon, minctor, rrly ail- Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a

FSL913A0R4

Abstract: 2E12 FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R1 MOSFET A5
Contextual Info: FSL913A0D, FSL913A0R Data Sheet 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: FSL913A0D FSL913A0D1 FSL913A0D3 FSL913A0R FSL913A0R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSL913A0D, FSL913A0R Data Sheet 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7438 Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

MIL-S-19500

Abstract: 2E12 FSL9130D FSL9130R fsl913 FSL9130
Contextual Info: S E M I C O N D U C T O R FSL9130D, FSL9130R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 5A, -100V, rDS ON = 0.680Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: H a r r is S E M I C O N D U C T O R FSL9130D, FSL9130R v m w w • ■ Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 5A, -100V, r Total Dose Single Event d s O N • Dose Rate • Photo Current • Neutron

5a 12v regula

Contextual Info: FSL9130D, FSL9130R HARRIS S E M I C O N D U C T O R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • Description 5A, -100V, roS ON = 0,68012 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: a ^ R F R is S E M I C O N D U C T O R FSL9130D, FSL9130R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 5A, -100V, rDS ON —0.680£i TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

2E12

Abstract: FSL9130D FSL9130D1 FSL9130D3 FSL9130R FSL9130R1
Contextual Info: FSL9130D, FSL9130R 5A, -100V, 0.680 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -100V, rDS ON = 0.680Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

ifr 150 mosfet

Contextual Info: ¡ f i H R R U U S E M I C O N D U C T O R FSL913AOD, FSL913AOR I S 7 A , -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features • 7A, -100V, Description = 0.300U • Total Dose - Meets Pre-RAD Specifications to 100K RAD Si

Contextual Info: FSL913A0D, FSL913A0R D ata S h eet 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a se ries of R adiation H a rd e n e d M O S F E T s specifically desig n ed for com m ercial and m ilitary s p a c e applications.

FSL913AOD

Contextual Info: FSL913AOD, FSL913AOR S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs September 1997 Features Description • 7A, -100V, rDS ON = 0.300Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSL913A0R4

Abstract: JANSR2N7438 2E12 FSL913A0
Contextual Info: JANSR2N7438 Data Sheet Formerly Available As FSL913A0R4, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

MOSFETS

Abstract: Power MOSFETs
Contextual Info: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480