EVAL-AD1896EB
Abstract: AD1896 74hc04 oscillator 8 Mhz toslink 5.1 sc937-02 RJ16 circuits spdif to rca converter RJ18 HDR3 AD1852
Text: a AD1896 7.75:1 to 1:8, 192 kHz Stereo ASRC Evaluation Board EVAL-AD1896EB OVERVIEW INTEGRATED CIRCUIT FUNCTIONS The AD1896 is a 24-bit, high-performance, single-chip, second generation Asynchronous Sample Rate Converter ASRC . The AD1896 supports sample rates up to 192 kHz with 7.75:1
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AD1896
EVAL-AD1896EB
24-bit,
C02625
EVAL-AD1896EB
74hc04 oscillator 8 Mhz
toslink 5.1
sc937-02
RJ16
circuits spdif to rca converter
RJ18
HDR3
AD1852
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sc937-02
Abstract: spdif receiver ic 74HC153 pin configuration AD1895 AD1896 toslink OPTICAL RECEIVING JACK smd resistor 1c0 SPDIF IC CS8414 CS8414 5.1 audio
Text: a OVERVIEW The AD1895 is an all-digital Asynchronous Sample Rate Converter ASRC used in audio applications. This ASRC supports sample rates up to 192 kHz with 7.75:1 downsampling and 1:8 upsampling ranges while maintaining the highest performance. In normal operation, a digital signal in
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AD1895
C02624
sc937-02
spdif receiver
ic 74HC153 pin configuration
AD1896
toslink OPTICAL RECEIVING JACK
smd resistor 1c0
SPDIF IC
CS8414
CS8414 5.1 audio
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FSX51WF
Abstract: FSX51
Text: FSX51WF General Purpose GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 12 V Gate-Source Voltage Vg S -5 V Total Power Dissipation Ptot 1 .0 w Storage Temperature T stg -65 t o +175
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FSX51WF
2000Q.
IS21I2
FSX51WF
FSX51
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AuSn solder
Abstract: fsx51x die-attach FSX51 AuSn
Text: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.
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FHX35X/002
FSX51X/011
FHX35X/002,
FSX51X/011.
AuSn solder
fsx51x
die-attach
FSX51
AuSn
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FSX51
Abstract: FSX51X
Text: FSX51X/011 FSX51LG/001 DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs MESFETs suitable fo r use as the FET fro n t end o f an optical receiver in high speed lightwave com m unication systems. This N-channel 1.0 micron speed Schottky-Barrier gate FET combines high transconductance, low gate
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FSX51X/01!
FSX51LG/001
FSX51X/011
FSX51LG/001
FSX51X/011
FSX51
LG/001
FSX51X
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fsx51x
Abstract: No abstract text available
Text: FSX51X GaAs FET and HEMT Chips ELECTRICAL CHARACTERIST CS Am bient Temperature Ta=25°C Item Symbol Saturated Drain Current IDSS Condition Min. Limit Typ. Max. Unit Vos =3V, VGS =0V 30 60 120 mA Transconductance gm V d S = 3V, Id s =30mA 18 25 - mS Pinch-off Voltage
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FSX51X
fsx51x
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FLC301XP
Abstract: FHR20X Flr016xp fsx51x FLC151XP FLC151 FHX45X
Text: G aAs FET & HEMT Chips FHX04X FHX05X FHX06X FHX13X FHX14X FHX35X FHX45X FHR02X FHR20X FSX017X FSX51X FSX52X FLC081XP FLC151XP FLC301XP FLK012XP FLK022XP/XV FLK052XV FLK102XV FLK202XV FLX252XV FLR016XP/XV FLR026XP/XV FLR056XV FLR106XV Data Sheets 3.5 3.5 3.5
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FHX04X
FHX05X
FHX06X
FHX13X
FHX14X
FHX35X
FHX45X
FHR02X
FHR20X
FSX017X
FLC301XP
Flr016xp
fsx51x
FLC151XP
FLC151
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FSX51
Abstract: fujitsu gaas fet fsx51x S3V 05 S3V 03
Text: FSX51X/011 FSX51LG/001 G aAs FET FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION The FSX51X/011 Chip and FSX51 LG/001 packaged devices are GaAs
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FSX51X/011
FSX51LG/001
FSX51
LG/001
FSX51LG/00J
51X/01
fujitsu gaas fet
fsx51x
S3V 05
S3V 03
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FSC11LF
Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
Text: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s
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FSC10LF
250ii
FSC10X
FSC11FA/LG
FSC11LF
95nstyp
FT6021
FT6021D
160nstyp
FSX52WF
FT6022D
FSX51WF
FT6012D
FT6110D
FT6046
FT6021D
ft6021
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fujitsu gaas fet
Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
Text: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002
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FHX35
LG/002
FHX35X/002
FSX51
LG/001
FSX51X/011
fujitsu gaas fet
S3V 03
S3V 05
fsx51x
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL300-1
FLL200-1
FLL300-2
FLL200-3
FLL200-2
FLL120
FLL105
FLL300-3
FLU35
FLL55
FLL105
FLL101
fll171
"FLL105"
FLL-300-1
FLK202
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KS D 9502
Abstract: FMM381CG FMM360 fmm362 fsx51x
Text: LIGHTWAVE CO M PO N E N TS & MODULES “CG” PACKAGE PIN DESCRIPTION FMM311CG # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL VSS DIN GND GND GND VSS T GND GND GND Mm k Mm k vss GND GND OUT GND V|B vss vss V|p vss vss VREF FUNCTION
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FMM311CG
068nF
FMM381CG
KS D 9502
FMM381CG
FMM360
fmm362
fsx51x
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FLC301XP
Abstract: fsx52 FUJITSU MICROWAVE XP 215 FLK202 FLC081XP FSX51 fsx51x FLC151XP FLC151
Text: GENERAL PURPOSE and POWER GaAs FET CHIPS Electrical Characteristics Ta = 25CC PidB TYP. (dB) GldB TYP. (dB) nadd TYP. (dB) f (GHz) Vd s (V) FLC081XP 28.5 7.0 31.5 8 10 180 XP FLC151XP 31.5 6.0 29.5 8 10 360 XP FLC301XP 34.8 9.5 37,0 4 10 720 XP •FSX017X
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FLC081XP
FLC151XP
FLC301XP
FSX017X
FSX51X
FSX52X
FLX252XV
FLK012XP
FLK022XV*
FLK052XV
FLC301XP
fsx52
FUJITSU MICROWAVE
XP 215
FLK202
FSX51
FLC151
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fld3c2pj
Abstract: FSX51 FLD5F6CX FMM362HE Fujitsu FLD5F6CX FLD148G3NL FRM5W231DR 382CG single frequency laser 1550 butterfly FMM381CG
Text: LIGHTWAVE COMPONENTS & M ODULES LASER DIODE MODULES OPTICAL AND ELECTRICAL CHARACTERISTICS TL = 25°C or Tc = 25°C Part Number Ith (mA) Vf (V) CW CW (typ) If = Pf Pth (mW) (mW) CW (min.) CW dF=lth) CW at Pf VDR=5V - 0.2 9* en •> 3.0 (lp=600 mA) o o o o
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14-pin
4001EH
4002EH
4004EK
622Mb/s
4005EK
fld3c2pj
FSX51
FLD5F6CX
FMM362HE
Fujitsu FLD5F6CX
FLD148G3NL
FRM5W231DR
382CG
single frequency laser 1550 butterfly
FMM381CG
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FHC40LG*
FHX13LG*
FHX14LG*
FHX04LG*
FHX05LG*
FHX06LG*
FHX35LG*
FHR02FH
FSX52WF
GaAs HEMTs X band
FSX017LG
FHX05LG
fhx06lg
FSU01LG
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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