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    G1740 Search Results

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    G1740 Price and Stock

    Nisshinbo Micro Devices NJG1740MHH-TE1

    IC AMP GPS 40MHZ-780MHZ 26EQFN
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    DigiKey NJG1740MHH-TE1 Reel 1,500 1,500
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    NJG1740MHH-TE1 Bulk 1,500
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    Mouser Electronics NJG1740MHH-TE1 1,455
    • 1 $2.95
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    • 100 $2.13
    • 1000 $1.49
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    Seiko Epson Corporation SG-8101CG-17.4080M-TBGSA0

    SG-8101CG 17.4080M-TBGSA0: OSC M
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    DigiKey SG-8101CG-17.4080M-TBGSA0 Reel 1,000
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    Seiko Epson Corporation SG-8101CG-17.4080M-TCHPA0

    SG-8101CG 17.4080M-TCHPA0: OSC M
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    DigiKey SG-8101CG-17.4080M-TCHPA0 Reel 1,000
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    Seiko Epson Corporation SG-8101CG-17.4080M-TBGPA0

    SG-8101CG 17.4080M-TBGPA0: OSC M
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    DigiKey SG-8101CG-17.4080M-TBGPA0 Reel 1,000
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    Seiko Epson Corporation SG-8018CG-17.4080M-TJHPA0

    XTAL OSC XO 17.4080MHZ CMOS SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SG-8018CG-17.4080M-TJHPA0 Reel 1,000
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    G1740 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G1740 Hamamatsu Photonics GaAsP photodiode Original PDF

    G1740 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G1736

    Abstract: G1735 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsPフォトダイオード 拡散型 赤感度延長タイプ 特長 用途 l 低暗電流 l 高安定性 l 赤感度延長タイプ l 分析機器 l 色識別 • 一般定格／絶対最大定格 型名 G1735 G1736 G1737 G1738 G1740 G3297 外形


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 G1736 G1735 G1737 G1738 G1740 G3297

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297

    G1735

    Abstract: No abstract text available
    Text: GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. G1735 G1736 G1737 G1738


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 KGPD1003E02

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1


    Original     		PDF PA2756GR PA2756GR

    G1735

    Abstract: G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735
    Text: PHOTODIODE GaAsP photodiode Diffusion type Red sensitivity extended type Features Applications l Low dark current l High stability l Red sensitivity extended type l Analytical instruments l Color identification • General ratings / Absolute maximum ratings


    Original     		PDF G1735 G1736 G1737 G1738 G1740 G3297 SE-171 KGPD1003E01 G1735 G1736 G1737 G1738 G1740 G3297 Borosilicate Hamamatsu G1735

    Hamamatsu G1735

    Abstract: G1735
    Text: GaAsP photodiodes Diffusion type Red sensitivity extended type Features Applications Low dark current Analytical instruments High stability Color identification Red sensitivity extended type Structure / Absolute maximum ratings Type no. Dimensional outline/


    Original     		PDF G1735 G1736 G1737 G1738 G1740 KGPD1003E03 Hamamatsu G1735

    G1125-02

    Abstract: S2216 02 S1863 G1126-02
    Text: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length


    OCR Scan     		PDF 00G2534 254nm 560nm 633nm G1125-02 G1126-02 G1127-02 G2119 G1745 G1746 S2216 02 S1863

    hamamatsu S875

    Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
    Text: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size


    OCR Scan     		PDF 560nm 633nm 930nm S2386 S2386-18K S1133-01, S1133-11, S1087-01, G1118, G1738 hamamatsu S875 S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133

    Untitled

    Abstract: No abstract text available
    Text: GaAsP Photodiodes Diffusion Types - Type No. I Dimensional Outline (P.46 to 53)/ Window Material '1 Area X Peak Sensitivity Wavelength ^p (mm2) (nm) (nm) Effective Active Active Package Area Size (mm) Spectral Response Range Photo Sensitivity S (A/W)


    OCR Scan     		PDF Isc100 G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 G5645 G5842

    P873-G35-552

    Abstract: p1760-04 P873-13
    Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and


    OCR Scan     		PDF S-114 DK-2000 JAN/87 P873-G35-552 p1760-04 P873-13

    D174D

    Abstract: 83C452 80C452-1
    Text: UPI-452 CHMOS PROGRAMMABLE I/O PROCESSOR 83C452 - 8K x 8 Mask Programmable Internal ROM 80C452 - External ROM/EPROM • 83C452/80C452:3.5 to 14 MHz Clock Rate ■ Software Compatible with the MCS-51 Family ■ 128-Byte Bi-Directional FIFO Slave Interface ■ Two DMA Channels


    OCR Scan     		PDF UPI-452 83C452 80C452 83C452/80C452 MCS-51 128-Byte 16-Bit 68-Pin UPI-452 interface28 D174D 80C452-1

    S1722-01

    Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
    Text: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR


    OCR Scan     		PDF S1721 S1722 S1722-01 S1722-02 S1863 S1863-01 S1723-04 S1723-08 S1723-06 S1723-05 S-1721 G1117 si7202 S2164-01

    Untitled

    Abstract: No abstract text available
    Text: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current


    OCR Scan     		PDF 0GG5532 560nm 633nm G1116 G1117 G1118 G1120 S1133, S1133-03, S1787

    S1190 hamamatsu

    Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
    Text: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K


    OCR Scan     		PDF 42STbGT S1188-02 S1188-06 S2216-01 S2216-02 S1190 S1190-01 S1190-03 S1190-04 S1223 S1190 hamamatsu S2856 S2216 02 S2164-01

    G1961-01

    Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
    Text: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)


    OCR Scan     		PDF Q002S3ti 254nm 400nm G1961 G1962 G1963 G1961-01 G1962-01 S1087, S1087-03 S1190 hamamatsu S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ

    g1962-01

    Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
    Text: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt


    OCR Scan     		PDF 100lux 2856K 1Q-90% G1117 G1120 G2711 G1735 G1736 G1737 G1738 g1962-01 u1116 G1126-02 hamamatsu PIN TO5 3x1015

    S1133-02

    Abstract: S1133-11 S1133-03 S2216 02 S2164 S1190 hamamatsu S1087 Hamamatsu S1087 light S2357 Hamamatsu S1133
    Text: HAMAMATSU Silicon CORP 1TE D • 42SU0*! 00 DE S 2t . 5 ■ 'p*|-S\ P h O tO d lO d e S Visible Light/Visible Light to IR Photometry Photosensitive surface Spectral Response Outlines Type No. Features S1087-01 For visible light to near IR S1087 For visible light


    OCR Scan     		PDF 42SU0* S1087-01 S1087 S1087-03 S2164 S2164-01 S2357 S1133-01 S1133-11 S1133 S1133-02 S1133-03 S2216 02 S1190 hamamatsu Hamamatsu S1087 light Hamamatsu S1133

    G1122

    Abstract: G1118 G1117
    Text: HAMAMATSU CORP tn DE ODOaDDb T GaAsp Photodiodes 422J96Û 9 HAM AM ATSU 890 CORP Photosensitive Surface Spectral Response T *- H i - 5" I Characteristics 25°C Package (mm) (mm2) (nm) (nm) Short Circuit Current Peak Wave­ length 560nm • GaP LED lsh, 1(


    OCR Scan     		PDF 145Ec 560nm-GaP 633nm G1115 G1116 G1117 G1118 G1120 G1118 G1120 G1122 G1117