GA50JT12 Search Results
GA50JT12 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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GA50JT12-247 |
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FETs - Single, Discrete Semiconductor Products, TRANS SJT 1.2KV 50A | Original | 9 |
GA50JT12 Price and Stock
GeneSic Semiconductor Inc GA50JT12-263TRANSISTOR 1200V 100A TO263-7 |
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GA50JT12-263 | Tube | 150 |
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GeneSic Semiconductor Inc GA50JT12-247TRANS SJT 1200V 100A TO247AB |
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GA50JT12-247 | Tube | 150 |
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GA50JT12-247 | 1 |
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GA50JT12-247 | 501 |
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Navitas Semiconductor GA50JT12-247 |
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GA50JT12-247 |
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Navitas Semiconductor GA50JT12-247ISO |
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GA50JT12-247ISO |
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GeneSic Semiconductor Inc GA50JT12-247ISOSiC SJT- 1200V/50A ISOLATED |
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GA50JT12-247ISO | 150 |
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GA50JT12 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GA50JT12-CAL Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT12-CAL. |
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GA50JT12-CAL sic/sjt/GA50JT12-CAL GA50JT12-CAL. 25-AUG-2014 GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3 | |
Contextual Info: Electrical Datasheet* GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 m Features • 175 °C maximum operating temperature Temperature independent switching performance |
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GA50JT12-CAL GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 GA50JT12-CAL | |
Contextual Info: GA50JT12-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50JT12-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.2 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc. |
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GA50JT12-247 GA50JT12-247. 29-JAN-2015 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3 | |
Contextual Info: GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 25 mΩ 100 A 95 Features • 250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area |
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GA50JT12-CAL GA50JT12 00E-47 26E-28 398E-9 026E-09 00E-3 | |
Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
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GA50JT12-247 O-247 GA50JT12 833E-48 073E-26 398E-9 026E-09 00E-3 | |
hcpl-322j
Abstract: hcpl 322j
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GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 hcpl-322j hcpl 322j | |
Contextual Info: GA50JT12-247 Normally – OFF Silicon Carbide Junction Transistor VDS VDS ON ID RDS(ON) Features Package • RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch |
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GA50JT12-247 O-247AB GA50JT12 00E-47 26E-28 75E-9 57E-9 00E-3 | |
Contextual Info: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features • VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards |
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GA03IDDJT30-FR4 GA03IDDJT30-FR4 FOD3182 | |
Contextual Info: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity |
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GA50JT17-247 O-247 GA50JT17 833E-48 073E-26 398E-9 026E-09 00E-3 | |
Contextual Info: Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation GA15IDDJT22-FR4 VISO,min PDrive, cont PDrive,switch fMAX Features Package • RoHS Compliant Requires single 12 V voltage supply Two-voltage level topology with low drive losses |
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GA15IDDJT22-FR4 GA50JT12-247 GA50SICP12-227 GA100SICP12-227 |