GAALAS DIODE Search Results
GAALAS DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CUZ12V |
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Zener Diode, 12 V, USC |
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GAALAS DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Infrared Emitting & Visible Diode 2 Chip Part Number BL-BS0N0301 BIR-CM1J3301A-2 Material Wave lengt h p GaAlAs/SH Super Red 660 GaAlAs/GaAlAs 880 GaAlAs/GaAs 940 InGaAlP/Ultra Orange 635 Water Clear Water Clear 880 GaAlAs/GaAs BIR-CN0F4301A-2 GaAlAs/GaAlAs/Sup |
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BIR-CM1J3301A-2 BL-BS0N0301 BIR-CN0F4301A-2 IR-08 | |
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Contextual Info: Infrared Emitting & Visible Diode 2 Chip Part Number BL-BS0N0301 BIR-CM1J3301A-2 Material Wave lengt h p GaAlAs/SH Super Red 660 GaAlAs/GaAlAs 880 GaAlAs/GaAs 940 InGaAlP/Ultra Orange 635 Water Clear Water Clear 880 GaAlAs/GaAs BIR-CN0F4301A-2 GaAlAs/GaAlAs/Sup |
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BL-BS0N0301 BIR-CM1J3301A-2 BIR-CN0F4301A-2 IR-08 | |
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Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM18V4V-2 GaAlAs/GaAs 940 BIR-BO18V4V-2 GaAlAs/GaAlAs 850 BIR-BO08V4V-2 GaAlAs/GaAlAs 850 BIR-BN08V4V-2 GaAlAs/GaAlAs BIR-BM18E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm ) |
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BIR-BM18V4V-2 BIR-BO18V4V-2 BIR-BO08V4V-2 BIR-BN08V4V-2 BIR-BM18E4G-2 BIR-BO18E4G-2 BIR-BO08E4G-2 BIR-BN08E4A | |
ir06Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM18V4V-2 GaAlAs/GaAs 940 BIR-BO18V4V-2 GaAlAs/GaAlAs 850 BIR-BO08V4V-2 GaAlAs/GaAlAs 850 BIR-BN08V4V-2 GaAlAs/GaAlAs BIR-BM18E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm ) |
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BIR-BM18V4V-2 BIR-BO18V4V-2 BIR-BO08V4V-2 BIR-BN08V4V-2 BIR-BM18E4G-2 BIR-BO18E4G-2 BIR-BO08E4G-2 BIR-BN08E4G-2 ir06 | |
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Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM18V4V-2 GaAlAs/GaAs 940 BIR-BO18V4V-2 GaAlAs/GaAlAs 850 BIR-BO08V4V-2 GaAlAs/GaAlAs 850 BIR-BN08V4V-2 GaAlAs/GaAlAs BIR-BM18E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm ) |
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BIR-BM18V4V-2 BIR-BO18V4V-2 BIR-BO08V4V-2 BIR-BN08V4V-2 BIR-BM18E4G-2 BIR-BO18E4G-2 BIR-BO08E4G-2 BIR-BN08E4. | |
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Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM13J4G GaAlAs/GaAs 940 BIR-BO13J4G GaAlAs/GaAlAs 850 BIR-BO03J4G GaAlAs/GaAlAs 850 BIR-BN03J4G GaAlAs/GaAlAs BIR-BM17J4G Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A |
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BIR-BM13J4G BIR-BO13J4G BIR-BO03J4G BIR-BN03J4G BIR-BM17J4G BIR-BO17J4G BIR-BO07J4G BIR-BN07J4G | |
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Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wave lengt h p BIR-BM13V4V-2 GaAlAs/GaAs 940 BIR-BO13V4V-2 GaAlAs/GaAlAs 850 BIR-BO03V4V-2 GaAlAs/GaAlAs 850 BIR-BN03V4V-2 GaAlAs/GaAlAs BIR-BM13E4G-2 Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A |
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BIR-BM13V4V-2 BIR-BO13V4V-2 BIR-BO03V4V-2 BIR-BN03V4V-2 BIR-BM13E4G-2 BIR-BO13E4G-2 BIR-BO03E4G-2 BIR-BN03E4G-2 | |
IR04
Abstract: GaAlAs IR-04
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BIR-BM13J4G BIR-BO13J4G BIR-BO03J4G BIR-BN03J4G BIR-BM17J4G BIR-BO17J4G BIR-BO07J4G BIR-BN07J4G IR04 GaAlAs IR-04 | |
BIRBO13V4V2
Abstract: BIR-BO13V4V-2 BIR-BM13V4
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BIR-BM13V4V-2 BIR-BO13V4V-2 BIR-BO03V4V-2 BIR-BN03V4V-2 BIR-BM13E4G-2 BIR-BO13E4G-2 BIR-BO03E4G-2 BIR-BN03E4G-2 BIRBO13V4V2 BIR-BM13V4 | |
L-7113F3C
Abstract: L-7104F3C
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L-34F3C L-7104F3C L-7113F3C L-34F3BT L-34SF4C L-34SF4BT L-34SF6C L-34SF6BT L-34SF7C L-7113F3C | |
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Contextual Info: TSMF3700 Vishay Telefunken GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL–CC–2 SMD package. It has been designed to meet the increasing demand |
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TSMF3700 TSMF3700 D-74025 20-May-99 | |
LP 8029
Abstract: TSMF3700
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TSMF3700 TSMF3700 D-74025 01-Dec-00 LP 8029 | |
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Contextual Info: TSMF3700 VISHAY Vishay Semiconductors GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL-CC-2 SMD package. It has been designed to meet the increasing demand |
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TSMF3700 TSMF3700 D-74025 08-Apr-04 | |
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Contextual Info: TSMF3710 VISHAY Vishay Semiconductors GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PLCC-2 SMD package. It has been designed to meet the increasing demand |
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TSMF3710 TSMF3700 D-74025 11-Mar-04 | |
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TSMF3700Contextual Info: TSMF3700 Vishay Telefunken GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL–CC–2 SMD package. It has been designed to meet the increasing demand |
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TSMF3700 TSMF3700 D-74025 01-Dec-00 | |
TSMF3700Contextual Info: TSMF3700 Vishay Telefunken GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package Description TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology in a miniature PL–CC–2 SMD package. It has been designed to meet the increasing demand |
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TSMF3700 TSMF3700 D-74025 20-May-99 | |
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Contextual Info: TSFF5200 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5200 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and |
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TSFF5200 TSFF5200 08-Apr-05 | |
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Contextual Info: TSFF5400 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. The new technology combines the high speed of DHGaAlAs with the efficiency of standard GaAlAs and |
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TSFF5400 TSFF5400 D-74025 08-Mar-05 | |
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Contextual Info: TSHA440. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44.series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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TSHA440. TSHA44. 08-Apr-05 | |
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Contextual Info: TSHA550. VISHAY Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. |
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TSHA550. 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSHA520
Abstract: TSHA5200 TSHA5201 TSHA5202 TSHA5203
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TSHA520. D-74025 11-May-04 TSHA520 TSHA5200 TSHA5201 TSHA5202 TSHA5203 | |
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Contextual Info: Infrared Emitting & Visible Diode 2 Chip Part Number BL-BS0N0301 BIR-CM1J3301A-2 Material Wave lengt h p GaAlAs/SH Super Red 660 GaAlAs/GaAlAs 880 GaAlAs/GaAs 940 Ee mW/cm @I F =50m A Typ. Max. Min. Typ. 1.70 2.60 1.30 1.70 2.50 4.00 1.25 1.50 0.40 0.85 |
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BL-BS0N0301 BIR-CM1J3301A-2 BIR-CN0F4301A-2 IR-08 | |
BPT-BP2334
Abstract: BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2
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BIR-BM1331 BIR-BM1331-A BIR-BO1331 BIR-BO0331 BIR-BN0331 BIR-BM1731 BIR-BM1731-A IR-17 BPT-BP2334 BPT-BP2931 BPT-BP1A34 BPT-BP0334 BIR-BM13J4G BIR-BM17J4G BPD-BQA934 400-110 BPT-BP0A31 bir_nm23c2 | |
BIR-BO1731Contextual Info: Infrared Emitting Diode End Look 2 Chip Part Number Material Wavelength p BIR-BM1331 GaAlAs/GaAs BIR-BM1331-A Lens Color V F V @ I F =50m A Ee(mW/cm ) @ I F =50m A Typ. Max. Min. Typ. 940 1.25 1.50 1.4 2.3 GaAlAs/GaAs 940 1.25 1.50 1.4 2.3 BIR-BO1331 GaAlAs/GaAlAs |
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BIR-BM1331 BIR-BM1331-A BIR-BO1331 BIR-BO0331 BIR-BN0331 BIR-BM1731 BIR-BM1731-A BIR-BO0731 BIR-BO1731 BIR-BO1731 | |