GAAS 0.15 UM PHEMT Search Results

GaAs 0.15 um pHEMT

Abstract: Ultra low noise amplifier GaAs 0.15 pHEMT
Contextual Info: Ultra Low Noise An Ci IX Y Scompari Ultra Low Noise pHEMTS • Low Noise Figure MwT-LNZOO MwT-LN600 • High A ssociated Gain 3 0 0 //. 6 6 0 0 / 1.5 • O peration u p to 30 GHz • 0.15 um GaAs p H e m t Process • Com m ercial Applications • M ilitary A pplications

hittite j

Abstract: Hydrogen GaAs 0.15 pHEMT mmic j PHILADELPHIA
Contextual Info: v00.0105 APPLICATION NOTES HYDROGEN EFFECTS ON GaAs pHEMT DEVICES Introduction: The effects of residual Hydrogen H2 on GaAs pHEMT devices in hermetically sealed packages are well documented by the GaAs MMIC community. This application note is intended to serve as an overview of this

ka band gaas fet Package

Abstract: TGA4516 ka-band amplifier AMC8515
Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

pseudomorphic HEMT

Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed

SPF-2086TKZ

Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Contextual Info: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10

Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

Quality System

Abstract: GaN Amplifiers Wireless Amplifiers Hybrid Modules mwtinc GM-141526-H4
Contextual Info: MMIC Amplifiers ƒƒHigh Performance/Quality MMIC Based on InGaP HBT, pHEMT, and Linear MESFET Technologies ƒƒHigh Linearity, Fully Matched WiMax Power Amplifiers ƒƒMilitary Screening Available on Hermetically Sealed Package Products ƒƒLow Cost Commercial Products

Contextual Info: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:

TGA4507

Contextual Info: Product Data Sheet August 5, 2008 Ka Band Low Noise Amplifier TGA4507 Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

Contextual Info: Product Data Sheet August 5, 2008 Ka Band Low Noise Amplifier TGA4507 Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

Contextual Info: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.

TGA2513

Abstract: Q1-Q10 GaAs 0.15 um pHEMT
Contextual Info: TGA2513 Wideband LNA Key Features • • • • • • • Product Description The TriQuint TGA2513 is a compact LNA/Gain Block MMIC. The LNA operates from 2-23 GHz and is designed using TriQuint’s proven standard 0.15 um gate pHEMT production process.

TGA4516

Abstract: ids 2560
Contextual Info: TGA4516 Ka Band 2W Power Amplifier Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI pHEMT Technology Chip Dimensions: 2.79 x 2.315 x 0.1 mm (0.110 x 0.091 x 0.004) in

ka-band amplifier

Abstract: all electrical symbol TGA4507-EPU
Contextual Info: Advance Product Information February 20, 2003 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 22 dB Nominal Gain 2.3 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

Contextual Info: Advance Product Information August 19, 2003 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

all electrical symbol

Abstract: TGA4507-EPU
Contextual Info: Advance Product Information January 7, 2004 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

Contextual Info: Advance Product Information February 14, 2008 Ka Band Low Noise Amplifier TGA4507-EPU Key Features • • • • • • • Typical Frequency Range: 28 - 36 GHz 2.3 dB Nominal Noise Figure 22 dB Nominal Gain 12 dBm Nominal P1dB Bias 3.0 V, 60 mA 0.15 um 3MI pHEMT Technology

TGA4516

Contextual Info: Advance Product Information December 2, 2004 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology

Contextual Info: Advance Product Information February 10, 2006 Ka-Band 2W Power Amplifier TGA4516 Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology

Contextual Info: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm

TGA4906

Contextual Info: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm

TGA4906

Abstract: TGA4916
Contextual Info: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm

TGA4906

Abstract: TGA4916
Contextual Info: TGA4906 4 Watt Ka-Band HPA Key Features • • • • • • • Measured Performance Frequency Range: 28 - 31 GHz 36 dBm Nominal Psat Gain: 24 dB Return Loss: -8 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Technology: 3MI 0.15 um Power pHEMT Chip Dimensions: 2.98 x 2.90 x 0.05 mm

Contextual Info: Advance Product Information February 19, 2003 K Band Low Noise Amplifier TGA4506-EPU Key Features • • • • • • • Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology