GAAS FETS Search Results

cf sot-363

Abstract: GaAs FET cfy 14 GaAs pHEMT LOW NOISE MMIC AMPLIFIER SOT-343 cfy 14 121B 801C SCT-595 CFY30 TSSOP-10-2 CFY 18
Contextual Info: GaAs Components Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

GaAs pHEMT LOW SOT-343

Abstract: CLY 2
Contextual Info: GaAs Components Selection Guide 2 Selection Guide GaAs RF-Transistors, MMICs and Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

nec 2571 4 pin

Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.

GaAs MESFET

Abstract: mesfet
Contextual Info: Section 1 GaAs FETs and PHEMTs Table of Contents Surface Mount GaAs M E S F E T . 1-3 Low Noise GaAs MESFET Chip .

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

M 1661 S

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power

C-Band Power GaAs FET

Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band

TGI8596-50

Abstract: TMD7185-2 TIM5359-60SL TIM8996-30 X-band Gan Hemt TGI1414-50L TMD0305-2 tim5964-60sl TIM5964-6UL TIM5359-4UL
Contextual Info: ▼ Microwave Semiconductors Product Guide 2009 Power GaAs FETs and GaAs MMICs Pout vs. Frequency Map .3 C-band Internally Matched Power GaAs FETs Pout vs. Frequency Map .4

GaAs MESFET

Abstract: SPDT FETs MMIC ALPHA spdt Switch GaAs MESFET amplifier GHz Power FET GaAs MMIC SPDT Switch
Contextual Info: Section 3 GaAs FETs and High Frequency GaAs MMICs Table of Contents Millimeter Wave MMIC Capabilities. 3-3 GaAs FET MMIC SPST Switch Reflective DC-18 G H z .

MGFC2430A

Abstract: L to Ku band amplifiers
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2430A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The M G FC2400 series GaAs FETs were designed fo r high frequency, m edium and high power GaAs FET with N-channel S chottky barrier gate type. FEATURES • High output power

TMD1414-2

Abstract: TGM9398-25 8596-50
Contextual Info: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FETs MGFC47A7785 7 .7 - 8.5GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC47A7785 device is an internally impedance-matched Unit : millimeters GaAs power FET especially designed for use in 7.7 ~ 8.5GHz

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.

Contextual Info: Order this document by MC33169/D MC33169 Advance Information GaAs Power Amplifier Support IC GaAs POWER AMPLIFIER SUPPORT IC The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

GN02039B

Abstract: GN01087B GN01154B 2.4 GHz driver amplifier SW SPDT GN01081B GN01096B GN01105B GN01106B GN01121B
Contextual Info: FETs, IPD, IGBTs, GaAs MMICs • GaAs MMICs ● GaAs MMICs for Mobile Communication Use Block LowNoise Amp. Part No. Antenna Switch RF Characteristics typ. Applications GN01087B Single-chip front end VDD = 3.4 V, IDD = 5.0 mA, f = 1.9 GHz CG: 20 dB NF: 4.0 dB

DC bias of FET

Abstract: Tecdia DC bias of gaas FET GaAs FETs bias tee fet rf high power Excelics packaging
Contextual Info: Recommendations for the Handling, Mounting and Biasing of High Power GaAs FETs A. Handling Precautions: All GaAs FETs are sensitive to electrostatic discharge. It is Excelics policy that all GaAs FETs will be shipped in electrostatic protective packaging and the user must pay careful attention to the

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

LORB

Abstract: NE2720 NE334S01
Contextual Info: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18

Nippon capacitors

Contextual Info: O rder this docum ent by M C33169/D MOTOROLA Advance Information GaAs POWER AMPLIFIER SUPPORT IC GaAs Power Am plifier Support 1C SEMICONDUCTOR TECHNICAL DATA The MC33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM, PCN and DECT. This

MA4F600-298

Abstract: transistor bul 3040 MA4F600 bul 3040 fet ft 30 GHZ
Contextual Info: M/A-COn SEMICONDUCTOR "t 3 D~| SbMBSlM ODDDbMb T r- Am 3i -ss MA4F600 Series Gallium Arsenide Low Noise Field Effect Transistor GaAs FET Preliminary Data Sheet Description and Applications The MA4F600 series of GaAs FETs is a low cost 0.8 ¡im gate length GaAs FET. The low noise

mc331694

Abstract: Voltage Doubler application mc3316940 RF switch negative voltage generator
Contextual Info: 8 < MOTOROLA > MC33169 A dvance Inform ation GaAs Power Amplifier Support 1C GaAs POWER AMPLIFIER SUPPORT IC The M C33169 is a support IC for GaAs Power Amplifier Enhanced FETs used in hand portable telephones such as GSM- PCN and DECT. This device provides negative voltages for full depletion of Enhanced MESFETs

NE960R2

Abstract: NE960R200 NE960R275 NE961R200
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power CW with high linear